Patents by Inventor Lodewijk Hubertus Van Os

Lodewijk Hubertus Van Os has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for generating masks utilized in conjunction with dipole illumination techniques
    Patent number: 6553562
    Abstract: A method of generating complementary masks for use in a multiple-exposure lithographic imaging process. The method includes the steps of identifying “horizontal” critical features and “vertical” critical features from a plurality of features forming a layout; identifying interconnection areas which are areas in which one of the horizontal critical features or the vertical critical features contacts another feature of the layout; defining a set of primary parameters on the basis of the proximity of the plurality of features relative to one another; and generating an edge modification plan for each interconnection area based on the primary parameters. A horizontal mask pattern is then generated by compiling the horizontal critical features, a first shield plan for the vertical critical features and the interconnection areas containing a horizontal critical feature modified by the edge modification plan.
    Type: Grant
    Filed: November 5, 2001
    Date of Patent: April 22, 2003
    Assignees: ASML Masktools B.V., ASM Lithography B.V.
    Inventors: Luigi Capodieci, Juan Andres Torres Robles, Lodewijk Hubertus Van Os
  • Method and apparatus for generating masks utilized in conjunction with dipole illumination techniques
    Publication number: 20020166107
    Abstract: A method of generating complementary masks for use in a multiple-exposure lithographic imaging process. The method includes the steps of identifying “horizontal” critical features and “vertical” critical features from a plurality of features forming a layout; identifying interconnection areas which are areas in which one of the horizontal critical features or the vertical critical features contacts another feature of the layout; defining a set of primary parameters on the basis of the proximity of the plurality of features relative to one another; and generating an edge modification plan for each interconnection area based on the primary parameters. A horizontal mask pattern is then generated by compiling the horizontal critical features, a first shield plan for the vertical critical features and the interconnection areas containing a horizontal critical feature modified by the edge modification plan.
    Type: Application
    Filed: November 5, 2001
    Publication date: November 7, 2002
    Inventors: Luigi Capodieci, Juan Andres Torres Robles, Lodewijk Hubertus Van Os