Abstract: An amplifier includes a main amplifier circuit and at least one auxiliary amplifier circuit. Portions of an RF signal to be amplified are delivered to the main and auxiliary amplifiers. The auxiliary amplifier circuit is selectively operable to operate in combination with the main amplifier circuit, such as based on the level of the RF signal. At least one hybrid coupler circuit has input ports coupled with outputs of the main amplifier circuit and auxiliary amplifier circuit. The hybrid coupler circuit is operable to combine amplifier circuit output signals at a coupler first output port. A coupler second output port is terminated with one of an electrical short and an electrical open circuit.

Abstract: An amplifier includes a main amplifier circuit and at least one auxiliary amplifier circuit. Portions of an RF signal to be amplified are delivered to the main and auxiliary amplifiers. The auxiliary amplifier circuit is selectively operable to operate in combination with the main amplifier circuit, such as based on the level of the RF signal. At least one hybrid coupler circuit has input ports coupled with outputs of the main amplifier circuit and auxiliary amplifier circuit. The hybrid coupler circuit is operable to combine amplifier circuit output signals at a coupler first output port. A coupler second output port is terminated with one of an electrical short and an electrical open circuit.

Abstract: An electronic device (10) having a thermal control capability is disclosed. The electronic device includes a substrate (16), a signal conductive region (26) disposed on at least a portion of the substrate, the signal conductive region configured to provide a signal path, and a first semiconductor die (12) having an active surface (18) and a back surface (20). The back surface is configured with a plurality of bubbler cavities positioned to receive a cooling fluid (24). In addition, the first semiconductor die includes a first plurality of solder bumps (30) disposed on the active surface, the first plurality of solder bumps contiguous with, and electrically coupling the active surface to the signal conductive region. Further, an electrically reactive metal region (402) in communication with the signal conductive region is sized to provide a location for real-time iterative tuning of the electronic device.

Abstract: A laser-tunable semiconductor device assembly (LSDA) is provided for electrical connection between multiple semiconductor devices (101, 103) within a RF transistor (100). The LSDA (100) provides for flip-chip type electrical connection between semiconductor devices (101, 103) utilizing solder bumps (503) existing on the semiconductor devices (101, 103) or the LSDA (100). A metalization pattern exists on both sides of the LSDA (100), electrically connected through via holes (403) existing in the LSDA (100). Laser tuning metallic pads (405) are provided for performance matching of the transistor. The use of the LSDA (100) provides for accurate modeling of the electrical connection between semiconductor devices (101, 103), while allowing for "on-line" process control of electrical performance of the transistor and acceptable heat dissipation through the bottom of the semiconductor devices (101, 103).