Abstract: In one embodiment, an output driver buffer circuit for a logic device includes an output driver transistor adapted to adjust an output voltage of an output pad; a capacitor adapted to be connected to the transistor gate and further adapted when charged and connected to the gate to turn the transistor on; and a reference voltage source adapted to be connected to the transistor gate and further adapted when connected to the gate to maintain the transistor on. The reference voltage source is further adapted to be connected to the transistor gate after the capacitor has turned the transistor on and independent of the level of the output voltage of the output pad.

Abstract: In one embodiment, a memory is provided that includes: a memory cell array adapted to be programmed with a positive voltage from a positive-negative node and to be erased with a negative voltage from the positive-negative node; a negative voltage blocking circuit; and a positive voltage source operable coupled to the negative voltage blocking circuit, the positive voltage source operable to provide the positive voltage to the positive-negative node through the negative voltage blocking circuit, wherein the negative voltage blocking circuit is adapted to prevent the negative voltage from coupling from the positive-negative node to the positive voltage source.

Abstract: Circuits and related methods are provided for buffering reference voltages from noise associated with output driver transistors. In one example, an output driver buffer circuit includes an output driver transistor adapted to adjust an output voltage of an output pad. The circuit also includes a pre-driver circuit connected to a gate of the output driver transistor. The pre-driver circuit is adapted to receive a reference voltage to control the output driver transistor. The pre-driver circuit includes a precharged capacitor, a first switch adapted to connect the capacitor to the gate, and a second switch adapted to connect the reference voltage to the gate. The second switch is adapted to operate following a time period after the capacitor is connected to the gate. The capacitor is adapted to buffer noise associated with the output driver transistor during the time period.

Abstract: A read operation and a write operation are synchronized via one port of a memory cell to avoid contention between such operations while doubling the bandwidth of such operations. Data is read from and data is written to a memory cell through a single port of the cell. A memory cell having a port is provided, and a clock signal is also provided for clocking the memory cell. The clock signal has a leading edge and a lagging edge within a clock signal cycle. During a single clock cycle, an enable read control signal is asserted in response to the clock signal, and an enable write control signal is asserted in response to the clock signal. In response to the enable read control signal, read data stored within the memory cell is read through a port of the cell. In response to the enable write control signal, write data is written to the memory cell through the port.

Abstract: A circuit, for controlling a write operation during which data from data lines is written to a memory cell, is used with a memory cell of the type that is connected to a row line and a first column line. An amplifier is connected across the first column line and a column line complimentary to the first column line. The column lines have a capacitance associated therewith. The circuit includes a control circuit for generating switching control signals. Switches are provided which are positioned in the column lines and are responsive to the switching control signals for selectively isolating at least a portion of the column lines during a predetermined portion of the write operation.

Abstract: A power up pulse generator circuit generates a pulse of predetermined duration in spite of a slow rate of change of applied power supply voltage. The circuit has application to integrated logic circuits that begin operation from an initial condition after the application of the power supply voltage and an input signal. In one embodiment, a dynamic random access memory (DRAM) of the present invention begins operation after receiving an address strobe signal. The address strobe signal is coupled to the power up pulse generator circuit to assure that the power up pulse is of sufficient duration to reset internal registers and so establish the initial condition. The power up pulse generator circuit of such an embodiment includes a selectively enabled input buffer, a selectively enabled one shot, and a flip flop designed to assume a predetermined state on application of the power supply voltage.

Abstract: A multiple latency synchronous dynamic random access memory includes separate two and three latency control circuits driven by an input latch circuit. Commands received at the multiple latency synchronous dynamic random access memory are converted to a separate set of command signals clocked through an input latch circuit by a feedback reset signal, such that commands are pipelined for three latency operation. In response to the command signals, the two latency control circuit produces a set of control signals according to a two latency algorithm. In response to the same command signals, the three latency control circuit independently produces a set of three latency control signals according to a three latency algorithm. In two latency operation, access time for signal development is externally controlled, while in three latency operation access time is internally controlled. In three latency operation, signal development time is determined separately for reads and writes.

Abstract: A multiple latency synchronous dynamic random access memory includes separate two and three latency control circuits driven by an input latch circuit. Commands received at the multiple latency synchronous dynamic random access memory are converted to a separate set of command signals clocked through an input latch circuit by a feedback reset signal, such that commands are pipelined for three latency operation. In response to the command signals, the two latency control circuit produces a set of control signals according to a two latency algorithm. In response to the same command signals, the three latency control circuit independently produces a set of three latency control signals according to a three latency algorithm. In two latency operation, access time for signal development is externally controlled, while in three latency operation access time is internally controlled. In three latency operation, signal development time is determined separately for reads and writes.

Abstract: A power up pulse generator circuit generates a pulse of predetermined duration in spite of a slow rate of change of applied power supply voltage. The circuit has application to integrated logic circuits that begin operation from an initial condition after the application of the power supply voltage and an input signal. In one embodiment, a dynamic random access memory (DRAM) of the present invention begins operation after receiving an address strobe signal. The address strobe signal is coupled to the power up pulse generator circuit to assure that the power up pulse is of sufficient duration to reset internal registers and so establish the initial condition. The power up pulse generator circuit of such an embodiment includes a selectively enabled input buffer, a selectively enabled one shot, and a flip flop designed to assume a predetermined state on application of the power supply voltage.

Abstract: A power up pulse generator circuit generates a pulse of predetermined duration in spite of a slow rate of change of applied power supply voltage. The circuit has application to integrated logic circuits that begin operation from an initial condition after the application of the power supply voltage and an input signal. In one embodiment, a dynamic random access memory (DRAM) of the present invention begins operation after receiving an address strobe signal. The address strobe signal is coupled to the power up pulse generator circuit to assure that the power up pulse is of sufficient duration to reset internal registers and so establish the initial condition. The power up pulse generator circuit of such an embodiment includes a selectively enabled input buffer, a is selectively enabled one shot, and a flip flop designed to assume a predetermined state on application of the power supply voltage.

Abstract: A multiple latency synchronous dynamic random access memory includes separate two and three latency control circuits driven by an input latch circuit. Commands received at the multiple latency synchronous dynamic random access memory are converted to a separate set of command signals clocked through an input latch circuit by a feedback reset signal, such that commands are pipelined for three latency operation. In response to the command signals, the two latency control circuit produces a set of control signals according to a two latency algorithm. In response to the same command signals, the three latency control circuit independently produces a set of three latency control signals according to a three latency algorithm. In two latency operation, access time for signal development is externally controlled, while in three latency operation access time is internally controlled. In three latency operation, signal development time is determined separately for reads and writes.

Abstract: A multiple latency synchronous dynamic random access memory includes separate two and three latency control circuits driven by an input latch circuit. Commands received at the multiple latency synchronous dynamic random access memory are converted to a separate set of command signals clocked through an input latch circuit by a feedback reset signal, such that commands are pipelined for three latency operation. In response to the command signals, the two latency control circuit produces a set of control signals according to a two latency algorithm. In response to the same command signals, the three latency control circuit independently produces a set of three latency control signals according to a three latency algorithm. In two latency operation, access time for signal development is externally controlled, while in three latency operation access time is internally controlled. In three latency operation, signal development time is determined separately for reads and writes.

Abstract: A multiple latency synchronous dynamic random access memory includes separate two and three latency control circuits driven by an input latch circuit. Commands received at the multiple latency synchronous dynamic random access memory are converted to a separate set of command signals clocked through an input latch circuit by a feedback reset signal, such that commands are pipelined for three latency operation. In response to the command signals, the two latency control circuit produces a set of control signals according to a two latency algorithm. In response to the same command signals, the three latency control circuit independently produces a set of three latency control signals according to a three latency algorithm. In two latency operation, access time for signal development is externally controlled, while in three latency operation access time is internally controlled. In three latency operation, signal development time is determined separately for reads and writes.

Abstract: A circuit, for controlling a write operation during which data from data lines is written to a memory cell, is used with a memory cell of the type that is connected to a row line and a first column line. An amplifier is connected across the first column line and a column line complimentary to the first column line. The column lines have a capacitance associated therewith. The circuit includes a control circuit for generating switching control signals. Switches are provided which are positioned in the column lines and are responsive to the switching control signals for selectively isolating at least a portion of the column lines during a predetermined portion of the write operation.

Abstract: A power up pulse generator circuit generates a pulse of predetermined duration in spite of a slow rate of change of applied power supply voltage. The circuit has application to integrated logic circuits that begin operation from an initial condition after the application of the power supply voltage and an input signal. In one embodiment, a dynamic random access memory (DRAM) of the present invention begins operation after receiving an address strobe signal. The address strobe signal is coupled to the power up pulse generator circuit to assure that the power up pulse is of sufficient duration to reset internal registers and so establish the initial condition. The power up pulse generator circuit of such an embodiment includes a selectively enabled input buffer, a selectively enabled one shot, and a flip flop designed to assume a predetermined state on application of the power supply voltage.

Abstract: An integrated circuit memory is described which has a multi-bit write register. Each plane of the multi-bit write register has a plurality of bits, or columns. The multi-bit write register allows each memory cell in a block of selected memory cells of the integrated circuit memory to be block written to a different logic state. The write register can be a color register in a multi-port memory device, or a single port device. Several methods of loading the write register are also described. These methods include loading the write register one column at a time or one plane at a time. The columns or planes can be loaded in either a pre-determined pattern, or selectively loaded.

Abstract: The invention is a circuit and a method for resetting a wordline by driving a potential of the wordline toward a ground reference potential prior to driving the potential of the wordline to a negative potential.

Abstract: A circuit, for controlling a write operation during which data from data lines is written to a memory cell, is used with a memory cell of the type that is connected to a row line and a first column line. An amplifier is connected across the first column line and a column line complimentary to the first column line. The column lines have a capacitance associated therewith. The circuit includes a control circuit for generating switching control signals. Switches are provided which are positioned in the column lines and are responsive to the switching control signals for selectively isolating at least a portion of the column lines during a predetermined portion of the write operation.

Abstract: A power up pulse generator circuit generates a pulse of predetermined duration in spite of a slow rate of change of applied power supply voltage. The circuit has application to integrated logic circuits that begin operation from an initial condition after the application of the power supply voltage and an input signal. In one embodiment, a dynamic random access memory (DRAM) of the present invention begins operation after receiving an address strobe signal. The address strobe signal is coupled to the power up pulse generator circuit to assure that the power up pulse is of sufficient duration to reset internal registers and so establish the initial condition. The power up pulse generator circuit of such an embodiment includes a selectively enabled input buffer, a selectively enabled one shot, and a flip flop designed to assume a predetermined state on application of the power supply voltage.

Abstract: A memory device includes an array of randomly addressable registers. Blocks of the addressable registers are addressable by an address for block writing during a block write cycle. The blocks are of the size n, wherein n is the number of bits per plane of memory being written during the block write cycle. The device further includes a sequential counter for incrementing the address by n during burst mode when a block write is performed during a block write cycle to address a next addressable register of the array of randomly addressable registers.