Abstract: In the production of extreme ultraviolet photolithography masks, to produce a set of masks: mask blanks possibly containing defects are provided; an individual map of positions of defects in each mask blank is produced; a concatenated map of defects in a number of masks is produced by transposing, to a given useful zone common to all masks, positions of defects detected during mapping of various mask blanks; individual defect zones each associated with a respective defect and encircling said defect are defined; depending on design rules and on structure to be produced, an electronic version of layouts of the masks is produced, taking account locally, in the design rules, of the existence of each defect in the concatenated map to prevent critical elements from being placed in defect zones; and each mask is produced from any one of the mask blanks and with a respective layout thus obtained.

Abstract: In the field of very high-energy (50 keV or more) electron-beam lithography, a layer to be patterned by lithography is borne by a holding structure that comprises a substrate (for example made of silicon) and an intermediate layer made of a porous material of density lower than that of the same but non-porous material, this material, notably silicon or carbon nanotubes, having a low atomic number, lower than 32 and preferably lower than 20. This structure decreases the influence of backscattered electrons on high-resolution lithographic patterns.

Abstract: In the field of photolithography and, notably, photolithography in the extreme ultraviolet, a photolithography method is provided in which a first mask blank is produced that can have defects, an individual mapping of the positions of the defects of this mask blank is established using an inspection machine, and, for each defect, an exclusion zone is defined around the defect. Then, two complementary masks are produced, one with the first mask blank and with the desired design pattern, except in the exclusion zones, the latter being black, the other with a second mask blank and with the desired design pattern parts in the exclusion zones, all the rest of the second mask being black. The exposure of the surface to be processed by photolithography is done in two successive steps using the two complementary masks.

Abstract: In the production of extreme ultraviolet photolithography masks, to produce a set of masks: mask blanks possibly containing defects are provided; an individual map of positions of defects in each mask blank is produced; a concatenated map of defects in a number of masks is produced by transposing, to a given useful zone common to all masks, positions of defects detected during mapping of various mask blanks; individual defect zones each associated with a respective defect and encircling said defect are defined; depending on design rules and on structure to be produced, an electronic version of layouts of the masks is produced, taking account locally, in the design rules, of the existence of each defect in the concatenated map to prevent critical elements from being placed in defect zones; and each mask is produced from any one of the mask blanks and with a respective layout thus obtained.

Abstract: In the field of photolithography and, notably, photolithography in the extreme ultraviolet, a photolithography method is provided in which a first mask blank is produced that can have defects, an individual mapping of the positions of the defects of this mask blank is established using an inspection machine, and, for each defect, an exclusion zone is defined around the defect. Then, two complementary masks are produced, one with the first mask blank and with the desired design pattern, except in the exclusion zones, the latter being black, the other with a second mask blank and with the desired design pattern parts in the exclusion zones, all the rest of the second mask being black. The exposure of the surface to be processed by photolithography is done in two successive steps using the two complementary masks.

Abstract: The invention relates to ultraviolet photolithography at 193 nanometres or 157 nanometres. To maximize resolution, optics having a very high numerical aperture are used, but without photoresists of sufficient index to best benefit from this high numerical aperture. It is proposed to use standard resists (PR) but with a thickness that is so small that they will be exposed locally by evanescent waves in the case of total internal reflection of the rays at very high angle of incidence, despite the presence of an immersion liquid (LQ) between the projection optics (OL) and the photoresist (PR).

Abstract: A security housing for storing and preventing the theft of elongated objects such as a windsurfer and its accessories is provided. The housing includes at least one compartment that is partially open at the top so that a portion of the windsurfer passes therethrough. The compartment has two vertical walls in intersecting planes, and a door and a lock that are controlled by a coin-operated apparatus.The windsurfer and its accessories are prevented from being removed by: a top wall having an oblong opening whose length is less than the width of an accessory, such as a wishbone; a ring attached to one vertical wall that holds an accessory, such as a wishbone, in the compartment; and a tie that is extended transversely across the keel shaft of the windsurfer to hold the windsurfer in the compartment.The compartment may be in the shape of a trapezoid or a triangle in cross-section. A plurality of compartments may be attached adjacent to one another in either a linear or circular configuration.