Abstract: A lithographic projection apparatus includes an illumination system, an interchangeable upper optics module, and a lower optics module. The illumination system provides a beam of radiation. The interchangeable upper optics module receives the beam and includes, sequentially, a beam splitter that splits the beam into portions, an aperture plate, and a plurality of reflecting surfaces. The lower optics module receives portions of the beam from respective ones the reflecting surfaces and directs the portions of the beam onto a substrate. Interference fringes or contact hole patterns are formed on the substrate using the portions of the beam.

Abstract: The tilt and position of individually controllable element are simultaneously adjusted to allow a greater range of contrasts to be achieved. This can also be used to compensate for cupping of individually controllable elements. Simultaneous adjustment of both the position and tilt of the individually controllable elements can be achieved by two electrodes operable over a range of values.

Abstract: A lithographic system includes a laser outputting a laser beam; a beamsplitter dividing the laser beam into a plurality of beams; and a prism for forming interference fringes on a substrate using the plurality of beams. Resolution of the lithographic system is adjustable without replacing any optical components in an optical path of the lithographic system. The beamsplitter is movable along the optical path to adjust the resolution. The prism includes a plurality of sets of facets, each set of facets corresponding to a particular resolution. Each set of facets corresponds to a particular beamsplitter position along the optical path, and/or to a particular resolution. The beamsplitter includes a linear grating or a checkerboard grating. The beams are N-way symmetric. The resolution is adjustable. A numerical aperture of the system is adjustable by moving the beamsplitter along the optical path. A liquid can be between the substrate and the prism.

Abstract: A lithographic system includes a source of a laser beam; a beamsplitter dividing the laser beam into a plurality of beams; and a plurality of reflecting surfaces that forms interference fringes on a substrate using the plurality of beams. Resolution of the lithographic system is adjustable by adjusting angular orientation of the reflecting surfaces. The beamsplitter is movable along the optical path to adjust the resolution. The reflecting surfaces may be facets of a prism. Each reflecting surface corresponds to a particular beamsplitter position along the optical path, and/or to a particular resolution. The beamsplitter includes a linear grating or a checkerboard grating. The beams are N-way symmetric. A numerical aperture of the system is adjustable by moving the beamsplitter along the optical path. A liquid can be between the substrate and the prism.

Abstract: Immersion lithography aberration control systems and methods that compensate for a heating effect of exposure energy in an immersion fluid across an exposure zone are provided. An aberration control system includes actuators that adjust optical elements within the immersion lithography system and a fluid heating compensation module coupled to the actuators. The fluid heating adjustment module determines actuator commands to make aberration adjustments to optical elements within the immersion lithography system based on changes in one or more of a flow rate of the immersion liquid, an exposure dose and a reticle pattern image. In an embodiment, the aberration control system includes an interferometric sensor that pre-calibrates aberrations based on changes in operating characteristics related to the immersion fluid. Methods are provided that calibrate aberrations, determine actuator adjustments and implement actuator adjustments upon changes in operating characteristics to control aberration effects.

Abstract: A liquid immersion lithography system including a projection optical system for directing electromagnetic radiation onto a substrate, and a showerhead for delivering liquid flow between the projection optical system and the substrate. The showerhead includes an injection nozzle and a retrieval nozzle located at different heights. The liquid flow is tilted relative to the substrate. A direction from the injection nozzle to the retrieval nozzle is tilted at approximately 1 to 2 degrees relative to the substrate.

Abstract: A lithographic system includes a source of a laser beam; a beamsplitter dividing the laser beam into a plurality of beams; and a plurality of reflecting surfaces that forms interference fringes on a substrate using the plurality of beams. Resolution of the lithographic system is adjustable by adjusting angular orientation of the reflecting surfaces. The beamsplitter is movable along the optical path to adjust the resolution. The reflecting surfaces may be facets of a prism. Each reflecting surface corresponds to a particular beamsplitter position along the optical path, and/or to a particular resolution. The beamsplitter includes a linear grating or a checkerboard grating. The beams are N-way symmetric. A numerical aperture of the system is adjustable by moving the beamsplitter along the optical path. A liquid can be between the substrate and the prism.

Abstract: A liquid immersion lithography system including a projection optical system for directing electromagnetic radiation onto a substrate, and a showerhead for delivering liquid flow between the projection optical system and the substrate. The showerhead includes an injection nozzle and a retrieval nozzle located at different heights. The liquid flow is tilted relative to the substrate. A direction from the injection nozzle to the retrieval nozzle is tilted at approximately 1 to 2 degrees relative to the substrate.

Abstract: An alignment targets with geometry designs provides a desired alignment offset for processes (both symmetric and asymmetric) on a wafer substrate. The alignment target includes one or more sub-targets, where each sub-target is defined as having a left portion and a right portion having a different geometric pattern, and where the left portion has a geometry density and the right portion has a geometry density.

Abstract: A liquid immersion lithography system includes projection optics and a showerhead. The projection optics are configured to expose a substrate with a patterned beam. The showerhead includes a first nozzle and a second nozzle that are configured to be at different distances from a surface of the substrate during an exposure operation.

Abstract: A liquid immersion lithography system including a projection optical system for directing electromagnetic radiation onto a substrate, and a showerhead for delivering liquid flow between the projection optical system and the substrate. The showerhead includes an injection nozzle and a retrieval nozzle located at different heights. The liquid flow is tilted relative to the substrate. A direction from the injection nozzle to the retrieval nozzle is tilted at approximately 1 to 2 degrees relative to the substrate.

Abstract: The tilt and position of individually controllable element are simultaneously adjusted to allow a greater range of contrasts to be achieved. This can also be used to compensate for cupping of individually controllable elements. Simultaneous adjustment of both the position and tilt of the individually controllable elements can be achieved by two electrodes operable over a range of values.

Abstract: A lithographic projection apparatus includes an illumination system, an interchangeable upper optics module, and a lower optics module. The illumination system provides a beam of radiation. The interchangeable upper optics module receives the beam and includes, sequentially, a beam splitter that splits the beam into portions, an aperture plate, and a plurality of reflecting surfaces. The lower optics module receives portions of the beam from respective ones the reflecting surfaces and directs the portions of the beam onto a substrate. Interference fringes or contact hole patterns are formed on the substrate using the portions of the beam.

Abstract: A lithographic system includes a laser outputting a laser beam; a beamsplitter dividing the laser beam into a plurality of beams; and a prism for forming interference fringes on a substrate using the plurality of beams. Resolution of the lithographic system is adjustable without replacing any optical components in an optical path of the lithographic system. The beamsplitter is movable along the optical path to adjust the resolution. The prism includes a plurality of sets of facets, each set of facets corresponding to a particular resolution. Each set of facets corresponds to a particular beamsplitter position along the optical path, and/or to a particular resolution. The beamsplitter includes a linear grating or a checkerboard grating. The beams are N-way symmetric. The resolution is adjustable. A numerical aperture of the system is adjustable by moving the beamsplitter along the optical path. A liquid can be between the substrate and the prism.

Abstract: A reticle stage having a range of motion sufficient to scan at least two distinct reticles. In a photolithographic process, a reticle stage having an extended range of motion and containing at least two reticles, preferably a phase shift reticle and a trim reticle, is used. The reticle stage scans the two reticles across an illumination field. The image of each reticle is projected by projection optics onto a photosensitive substrate on a wafer stage. The field on the photosensitive substrate is exposed with the image of the first reticle and subsequently exposed with the image of the second reticle. The projection of an image of a first and second reticle onto the same field in a scanning operation greatly facilitates throughput of the photolithographic tool or device. Reticle changes are eliminated when at least two reticles are needed to expose a single field. The use of multiple reticles to expose a single field is necessary when a phase shift mask and related trim mask are used.

Abstract: An alignment targets with geometry designs provides an desired alignment offset for processes (both symmetric and asymmetric) on a wafer substrate. The alignment target includes one or more sub-targets, where each sub-target is defined as having a left portion and a right portion having a different geometric pattern, and where the left portion has a geometry density and the right portion has a geometry density.

Abstract: A reticle stage having a range of motion sufficient to scan at least two distinct reticles. In a photolithographic process, a reticle stage having an extended range of motion and containing at least two reticles, preferably a phase shift reticle and a trim reticle, is used. The reticle stage scans the two reticles across an illumination field. The image of each reticle is projected by projection optics onto a photosensitive substrate on a wafer stage. The field on the photosensitive substrate is exposed with the image of the first reticle and subsequently exposed with the image of the second reticle. The projection of an image of a first and second reticle onto the same field in a scanning operation greatly facilitates throughput of the photolithographic tool or device. Reticle changes are eliminated when at least two reticles are needed to expose a single field. The use of multiple reticles to expose a single field is necessary when a phase shift mask and related trim mask are used.

Abstract: A reticle stage having a range of motion sufficient to scan at least two distinct reticles. In a photolithographic process, a reticle stage having an extended range of motion and containing at least two reticles, preferably a phase shift reticle and a trim reticle, is used. The reticle stage scans the two reticles across an illumination field. The image of each reticle is projected by projection optics onto a photosensitive substrate on a wafer stage. The field on the photosensitive substrate is exposed with the image of the first reticle and subsequently exposed with the image of the second reticle. The projection of an image of a first and second reticle onto the same field in a scanning operation greatly facilitates throughput of the photolithographic tool or device. Reticle changes are eliminated when at least two reticles are needed to expose a single field. The use of multiple reticles to expose a single field is necessary when a phase shift mask and related trim mask are used.

Abstract: A reticle stage having a range of motion sufficient to scan at least two distinct reticles. In a photolithographic process, a reticle stage having an extended range of motion and containing at least two reticles, preferably a phase shift reticle and a trim reticle, is used. The reticle stage scans the two reticles across an illumination field. The image of each reticle is projected by projection optics onto a photosensitive substrate on a wafer stage. The field on the photosensitive substrate is exposed with the image of the first reticle and subsequently exposed with the image of the second reticle. The projection of an image of a first and second reticle onto the same field in a scanning operation greatly facilitates throughput of the photolithographic tool or device. Reticle changes are eliminated when at least two reticles are needed to expose a single field. The use of multiple reticles to expose a single field is necessary when a phase shift mask and related trim mask are used.

Abstract: A reticle stage having a range of motion sufficient to scan at least two distinct reticles. In a photolithographic process, a reticle stage having an extended range of motion and containing at least two reticles, preferably a phase shift reticle and a trim reticle, is used. The reticle stage scans the two reticles across an illumination field. The image of each reticle is projected by projection optics onto a photosensitive substrate on a wafer stage. The field on the photosensitive substrate is exposed with the image of the first reticle and subsequently exposed with the image of the second reticle. The projection of an image of a first and second reticle onto the same field in a scanning operation greatly facilitates throughput of the photolithographic tool or device. Reticle changes are eliminated when at least two reticles are needed to expose a single field. The use of multiple reticles to expose a single field is necessary when a phase shift mask and related trim mask are used.