Abstract: Disclosed is a parameter configuration method, comprising: a second terminal device sending a first parameter combination to a first terminal device, or the first terminal device sending a second parameter combination to the second terminal device, wherein the first parameter combination and the second parameter combination are both used for indicating a sidelink data sending parameter of the second terminal device and/or a sidelink data receiving parameter of the second terminal device. Further disclosed are a terminal device and a storage medium.

Abstract: A contact stack of a semiconductor device includes a source/drain feature, a silicide layer wrapping around the source/drain feature, a seed metal layer in direct contact with the silicide layer, and a conductor in contact with the seed metal layer. The contact stack excludes a metal nitride layer in direct contact with the silicide layer.

Abstract: Embodiments of the present application provide a control information transmission method and apparatus, a resource configuration method and apparatus, and a communication device. The method comprises: transmitting first control information between a first terminal and a second terminal, the first control information being borne on a first control channel and used for scheduling transmission of a first data channel, and the first data channel being used for transmitting data between the first terminal and the second terminal, wherein the first control channel and the first data channel perform time division transmission.

Abstract: A user equipment (UE), a base station (BS), and a method of vehicle-to-everything (V2X) communication of same are provided. The method of V2X communication of the UE includes receiving at least one network V2X configuration information relating at least one V2X operation from the BS, generating at least one V2X data, and triggering to send, to the BS, at least one UE assistance information (UEAI) using the at least one network V2X configuration information as a scheduling request indication (SRI) when the UE has the at least one V2X data to be transmitted.

Abstract: Memories, memory controllers, and computing systems and their methods of operation are disclosed. In some embodiments, a method of accessing a memory includes accessing a first bit line corresponding to a sense amplifier and accessing a second bit line corresponding to the sense amplifier. In some embodiments, a memory controller includes a second memory configured to store data of a second data type. In some embodiments, a method includes operating a memory in a second mode in response to receiving an input to change the operation of the memory from a first mode to the second mode.

Abstract: Disclosed in embodiments of the present disclosure are a sidelink communication method and a terminal device. The method includes a first terminal device receives sidelink control information (SCI) transmitted from a second terminal device; and the first terminal device obtains information of a sidelink reference signal according to the SCI.

Abstract: An information processing method and apparatus, a terminal, and a storage medium. The information processing method comprises: determining first content in response to a first operation event of a first control in a first document (S11); and adding the first content to the first document on the basis of content information and type information of the first content (S12). The type information comprises first type information and/or second type information, the second type information having an association with the first type information. In the described method, first content can be added to a first document according to content information and type information of the first content, so as to distinguish different ways of adding the first content.

Abstract: Apparatus and methods for deployment of fixtures. The apparatus may include a system for controlling deployed fixtures. The system may receive user commands different devices in different formats. The fixtures may be independently addressable. The fixtures may be magnetically supported by a fixture support. A brace may join two or more fixture supports without reducing space available to support fixtures. The brace may join a fixture support to a fixture support accessory. An accessory may include a variable-angle junction. The fixture may include articulating joints for controlling the direction of a beam. The fixture may include a lens having an electrically controllable beam spread angle. The fixture may be stowable in the fixture support. The fixture may be slidable along a cord to adjust a height of the fixture. The fixture may include an extendable ring. The system may coordinate motions of the fixtures to follow a target. The fixture may include an elongated board.

Abstract: A data transmission method and a terminal device are disclosed, which may solve the data transmission problems of a sidelink when the size of a time unit of a downlink and the size of a time unit of the sidelink are not the same. The method includes that a terminal device receives first control information sent by a network device, and determines a sending time for sidelink data according to the first control information.

Abstract: A package component and forming method thereof are provided. The package component includes a substrate and a conductive layer. The substrate includes a first surface. The conductive layer is disposed over the first surface. The conductive layer includes a first conductive feature and a second conductive feature. The second conductive feature covers a portion of the first conductive feature. A resistance of the second conductive feature is lower than a resistance of the first conductive feature.

Abstract: A multi-function device includes a machine base, a plurality of horizontal bars, at least one gantry, a plurality of processing units and at least one first conveying uni. The horizontal bars are disposed at the top of the machine base. The gantry is disposed on the machine base and disposed over the horizontal bars. The processing unit is disposed on the horizontal bars and the gantry. The first conveying unit is disposed on the machine base. Each processing unit is a processing device capable of being replaced according to actual requirements, such as a soldering flux device, a soldering device, a sucking device, a glue dipping device, a glue dispensing device, a detecting device, a cleaning device or other processing devices. The present invention can integrate different types of manufacturing devices into one device, and the quantities of the horizontal bars and the modules thereof are not limited.

Abstract: Apparatus and methods for deployment of fixtures. The apparatus may include a system for controlling deployed fixtures. The system may receive user commands different devices in different formats. The fixtures may be independently addressable. The fixtures may be magnetically supported by a fixture support. A brace may join two or more fixture supports without reducing space available to support fixtures. The brace may join a fixture support to a fixture support accessory. An accessory may include a variable-angle junction. The fixture may include articulating joints for controlling the direction of a beam. The fixture may include a lens having an electrically controllable beam spread angle. The fixture may be stowable in the fixture support. The fixture may be slidable along a cord to adjust a height of the fixture. The fixture may include an extendable ring. The system may coordinate motions of the fixtures to follow a target. The fixture may include an elongated board.

Abstract: Semiconductor device structures are provided. The semiconductor device structure includes a substrate and a first fin structure protruding from the substrate. The semiconductor device structure further includes an isolation layer formed around the first fin structure and covering a sidewall of the first fin structure and a gate stack formed over the first fin structure and the isolation layer. The semiconductor device structure further includes a first source/drain structure formed over the first fin structure and spaced apart from the gate stack and a contact structure formed over the first source/drain structure. The semiconductor device structure includes a dielectric structure formed through the contact structure. In addition, the contact structure and the dielectric structure has a first slope interface that slopes downwardly from a top surface of the contact structure to a top surface of the isolation layer.

Abstract: An interconnect structure including a dielectric structure, plugs, and conductive lines is provided. The dielectric structure is disposed on a substrate. The plugs are disposed in the dielectric structure. The conductive lines are disposed in the dielectric structure and are electrically connected to the plugs. The sidewall of at least one of the conductive lines is in direct contact with the dielectric structure.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a transistor, a conductive feature on the transistor, a dielectric layer over the conductive feature, and an electrical connection structure in the dielectric layer and on the conductive feature. The electrical connection structure includes a first grain of a first metal material and a first inhibition layer extending along a grain boundary of the first grain of the first metal material, the first inhibition layer is made of a second metal material, and the first metal material and the second metal material have different oxidation/reduction potentials.

Abstract: A semiconductor device comprises a fin disposed on a substrate, a source/drain feature disposed over the fin, a silicide layer disposed over the source/drain feature, a seed metal layer disposed over the silicide layer and wrapping around the source/drain feature, and a metal layer disposed on the silicide layer, where the metal layer contacts the seed metal layer.

Abstract: A method for preparing anisotropic cellulose-based hydrogel is provided. The method comprises ammoniating the dialdehyde cellulose obtained by oxidizing cellulose using sodium periodate to obtain ammoniated cellulose derivatives; performing Schiff reaction using the ammoniated cellulose derivatives and dopamine to obtain cellulose-based nanosheets; depositing Fe3O4 nanoparticles on a surface of the cellulose-based nanosheets by a deposition method to obtain magnetic cellulose-based nanosheets; and forming the anisotropic cellulose-based hydrogel using the magnetic cellulose-based nanosheets by a polymerization method.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a first interconnect arranged within an inter-level dielectric (ILD) layer. The first interconnect has opposing sidewalls that are both laterally separated from closest neighboring interconnects within the ILD layer by one or more air-gaps along a cross-sectional view. A second interconnect is arranged within the ILD layer. The ILD layer laterally contacts opposing sidewalls of the second interconnect as viewed along the cross-sectional view.

Abstract: Disclosed are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate, a first dielectric layer, a first gate, a second dielectric layer, and a second gate. The first dielectric layer is located on the substrate. The first gate is located on the first dielectric layer. The second dielectric layer is located on the substrate. The second gate is located on the second dielectric layer. A bottom surface of the second gate and a bottom surface of the first gate are located on different planes.

Abstract: A method includes forming a first conductive feature on a substrate, forming a via that contacts the first conductive feature, the via comprising a conductive material, performing a Chemical Mechanical Polishing (CMP) process to a top surface of the via, depositing an Interlayer Dielectric (ILD) layer on the via, forming a trench within the ILD layer to expose the via, and filling the trench with a second conductive feature that contacts the via, the second conductive feature comprising a same material as the conductive material.