Abstract: An integrated semiconductor device is formed by bonding the conductors of one fabricated semiconductor device having a substrate to the conductors on another fabricated semiconductor device having a substrate, flowing an etch-resist in the form of an uncured cement (e.g. epoxy) between the devices, allowing the etch-resist to solidify, and removing the substrate from one of the semiconductor devices. Preferably the etch-resist epoxy is retained to impart mechanical strength to the device. More specifically, a hybrid semiconductor device is formed by bonding the conductors of one or more GaAs/AlGaAs multiple quantum well modulators to conductors on an IC chip, wicking an uncured epoxy between the modulators and the chip, allowing the epoxy to cure, and removing the substrate from the modulator.

Abstract: Applicants have discovered a method of reproducibly fabricating SEED devices having an enhanced contrast ratio by adjusting the thickness of a cap layer in relation to the reflector stacks to form a Fabry-Perot cavity. Specifically, after growth of the reflector stack and the quantum wells, the optical thickness of the region above reflector stacks is measured without breaking vacuum, and based on such measurement a cap layer is grown of sufficient thickness to form a Fabry-Perot cavity for light of desired wavelength. The result is a device with enhanced contrast between the "on" and "off" states sufficiently so that the state can be directly read without differential processing.

Abstract: FETs and quantum well diodes are combined on the same semi-insulating substrate, while providing the FETs with protection from spurious voltages. A deeply buried P region in the semi-insulating substrate is partitioned by a high resistivity proton implanted region, to provide both the P region of the quantum well diode and an isolating buried P layer for the FETs.

Abstract: A light emitting device uses a vertical cavity surface emitting laser having a voltage controlled mirror which is used, for example, to turn the laser ON and OFF by varying the reflectivity of one mirror forming the laser cavity.

Abstract: The use of an anisotropic etchant containing BCl.sub.3 and a source of atomic chlorine for III-V semiconductor materials has yielded improved results for semiconductor devices. For example, via gallium arsenide field effect transistors produced using this anisotropic etchant to fabricate via holes exhibit excellent electrical characteristics.

Abstract: The use of an anisotropic etchant containing BCl.sub.3 and a source of atomic chlorine for III-V semiconductor materials has yielded improved results for semiconductor devices. For example, via gallium arsenide field effect transistors produced using this anisotropic etchant to fabricate via holes exhibit excellent electrical characteristics.

Abstract: A process is described for plating gold on metal surfaces electrically attached to a compound semiconductor. The procedure is particularly valuable where gold is to be in small holes or crevices in semiconductor structure since electroplating on the semiconductor surface is avoided. The process is useful for providing low inductance electrical connection to various parts of semiconductor devices such as to the source in gallium arsenide field-effect transistors.

Abstract: A method for thinning and polishing semiconductor materials such as gallium arsenide is disclosed. This method utilizes a chemical etchant in conjunction with a grooved flat polishing plate. The polishing plate has a hardness greater than 2 on the mohs scale. High quality polished surfaces are obtained. Exemplary of polishing plate materials is quartz.

Abstract: A process is described for making III-V semiconductor devices with electroless gold plated layers. Various III-V semiconductors are used, particularly those containing gallium, aluminum and indium such as GaAs, Al.sub.x Ga.sub.1-x As, GaP, Al.sub.x Ga.sub.1-x P.sub.y As.sub.1-y, In.sub.x Ga.sub.1-x P.sub.y As.sub.1-y and InP. This process involves activation of a semiconductor surface and then electrolessly gold plating the surface. Electroless gold films produced in accordance with this process have good adherence to the semiconductor surface and are useful not only for electrical connection to the semiconductor, but also for attachment to headers for mechanical convenience and to maintain temperature stability. Exemplary devices are field effect transistors, particularly those operating in the microwave region, and semiconductor lasers.