Abstract: Broadly speaking, the present techniques exploit the properties of correlated electron materials for artificial neural networks and neuromorphic computing. In particular, the present techniques provide apparatuses/devices that comprise at least one correlated electron switch (CES) element and which may be used as, or to form, an artificial neuron or an artificial synapse.

Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described in which a correlated electron material film may be formed over a conductive substrate by converting at least a portion of the conductive substrate to CEM.

Abstract: A device stack for an electronic memory or other device includes a substrate and first and second layers of insulating material. The first layer of insulating material is supported by the substrate. A semiconducting ferroelectric layer is positioned and electrically isolated between the first and second layers of insulating material. A stress layer capable of converting a ferroelectric or semiconductor material into a semiconducting ferroelectric material can be positioned in contact with the semiconducting ferroelectric layer. In some embodiments, the device is a Metal-Insulator-FeS-Insulator-Semiconductor (MIFIS) device that allows for controlled switching of the semiconducting ferroelectric (FeS) layer between various polarization states. Switching polarization states is enabled by application of an electric field by a semiconducting electrode.

Abstract: Subject matter disclosed herein may relate to construction of a correlated electron material (CEM) device. In particular embodiments, after formation of a film comprising layers of a transition metal oxide (TMO) material and a dopant, at least a portion of the film may be exposed to an elevated temperature. Exposure of the at least a portion of the film to the elevated temperature may continue until the atomic concentration of the dopant within the film is reduced, which may enable operation of the film as a correlated electron material CEM exhibiting switching of impedance states.

Abstract: A device stack for an electronic memory or other device includes a substrate and first and second layers of insulating material. The first layer of insulating material is supported by the substrate. A semiconducting ferroelectric layer is positioned and electrically isolated between the first and second layers of insulating material. An electrode is positioned onto or above the second layer of insulating material. In some embodiments, the device is a Metal-Insulator-FeS-Insulator-Semiconductor (MIFIS) device that allows for controlled switching of the semiconducting ferroelectric (FeS) layer between various polarization states. Switching polarization states is enabled by application of an electric field by the electrode.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) such as in a CEM device capable of switching between and/or among impedance states. In particular embodiments, a CEM may be formed from one or more transition metal oxides (TMOs), one or more post transition metal oxides (PTMOs) or one or more post transition metal chalcogenides (PTMCs), or a combination thereof.

Abstract: Various implementations described herein are related to a device having multiple conductive terminals formed with a superconductive material. The device may include at least one switching layer formed with correlated-electron material (CEM) that is disposed between the multiple conductive terminals. The CEM may comprise carbon or a carbon based compound. The device may refer to a switch structure or similar.

Abstract: Subject matter disclosed herein may relate to correlated electron switches.

Abstract: Methods are disclosed herein for controlling the switching characteristics of correlated electron material (CEM) switching devices. The methods comprise one or more of controlling a density of grain boundaries in the CEM layer, controlling an open pore porosity in the CEM layer and controlling a surface area of exposed surfaces of the CEM layer during the fabrication of the CEM switching devices.

Abstract: Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.

Abstract: Various implementations described herein are related to a device having multiple conductive terminals formed with a superconductive material. The device may include at least one switching layer formed with correlated-electron material (CEM) that is disposed between the multiple conductive terminals. The CEM may comprise carbon or a carbon based compound. The device may refer to a switch structure or similar.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In embodiments, processes are described in which conductive traces may be formed on or over an insulating material. Responsive to forming voids in the insulating material, localized portions of the conductive traces in contact with the voids may be exposed to gaseous oxidizing agents, which may convert the localized portions of the conductive traces to a CEM. In embodiments, an electrode material may be deposited within the voids to contact the localized portion of conductive trace converted to the CEM.

Abstract: A correlated electron material device is described to comprise a conductive substrate and a layer of a correlated electron material disposed over the conductive substrate. The layer of correlated electron material may comprise a metal rich transition or other metal compound, and at least a portion of anion vacancies within the metal rich transition or other metal compound are occupied by an electron back-donating extrinsic ligand for the metal rich transition or other metal compound. Under certain conditions, the electron back-donating extrinsic ligand occupying anion vacancies may be activated so as to impart particular switching characteristics in the correlated electron material device.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) such as in a CEM device capable of switching between and/or among impedance states. In particular embodiments, a CEM may be formed from one or more transition metal oxides (TMOs), one or more post transition metal oxides (PTMOs) or one or more post transition metal chalcogenides (PTMCs), or a combination thereof.

Abstract: Subject matter disclosed herein may relate to devices formed from correlated electron material.

Abstract: Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may comprise depositing metal layers, such layers of a transition metal, over a conductive substrate. Dopant layers may subsequently be deposited on the layers of the transition metal, followed by annealing of the layers of transition metal and dopant layers. Responsive to annealing, dopant from the dopant layers may diffuse into the one or more layers of transition metal, thereby forming a CEM.

Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, a correlated electron material may be doped using dopant species derived from one or more precursors utilized to fabricate nearby structures such as, for example, a conductive substrate or a conductive overlay.

Abstract: Subject matter disclosed herein may relate to construction of a correlated electron material (CEM) device. In particular embodiments, after formation of a film comprising layers of a transition metal oxide (TMO) material and a dopant, at least a portion of the film may be exposed to an elevated temperature. Exposure of the at least a portion of the film to the elevated temperature may continue until the atomic concentration of the dopant within the film is reduced, which may enable operation of the film as a correlated electron material CEM exhibiting switching of impedance states.

Abstract: Subject matter disclosed herein may relate to construction of a correlated electron material (CEM) device. In particular embodiments, after formation of a film comprising layers of a transition metal oxide (TMO) material and a dopant, at least a portion of the film may be exposed to an elevated temperature. Exposure of the at least a portion of the film to the elevated temperature may continue until the atomic concentration of the dopant within the film is reduced, which may enable operation of the film as a correlated electron material CEM exhibiting switching of impedance states.