Abstract: An RF electronic circuit comprising at least: a substrate comprising at least one support layer and a semiconducting surface layer located on the support layer; at least one electronic component able to carry out at least one of the RF signal transmission and/or reception and/or processing functions, and made in or on a first region of the surface layer; and a matrix of cavities located in at least one first region of the support layer located under the first region of the surface layer, facing at least the electronic component, and such that the internal volumes of the cavities are separated and isolated from each other by portions of the support layer.

Abstract: RF electronic circuit comprising at least: a substrate comprising at least one support layer and a semiconducting surface layer located on the support layer; at least one electronic component able to carry out at least one of the RF signal transmission and/or reception and/or processing functions, and made in or on a first region of the surface layer; a matrix of cavities located in at least one first region of the support layer located under the first region of the surface layer, facing at least the electronic component, and such that the internal volumes of the cavities are separated and isolated from each other by portions of the support layer.

Abstract: A method for characterizing the lifetime, extrapolated to working conditions, of an interconnect structure representative of a technology in a given product uses modeling of an electromigration phenomenon by Black's equation, but applied separately to groups of test samples of the structure which are determined on the basis of the resistance increase value of the samples at the failure time. The more refined approach carried out in this way allows better characterization of the interconnect structure in relation to operational working conditions, corresponding to an application or a finished product, making it possible to check whether the expected lifetime can be guaranteed regardless of the failure mechanism at play in said structure.

Abstract: A Bloch line magnetic memory has a magnetic film of thickness h located on a substrate and includes Bloch lines of width .LAMBDA.o. The magnetic film satisfies the condition (1) h/.LAMBDA.o<14 with .LAMBDA.o=.sqroot.A/2.pi.Ms.sup.2, in which A represents the magnetic exchange constant and 4.pi.Ms represents the saturation magnetization of the film.