Abstract: An article made of an alloy of the general formula Pt1-a-bMa(B1-xMdx)b in which i) M stands for one or a mixture of metallic element(s) of the group Zr, Ti, Fe, Ni, Co, Cu, Pd, Ag, Al; ii) Md stands for one or a mixture of several metalloids of the group Si, P, C, S, As, Ge; iii) a is smaller than 0.2; iv) b is comprised between 0.2 and 0.5; v) x is comprised between 0 and 0.8; vi) the overall P content, if present, is less than 10 atomic percent the proportions of the elements forming the alloy having been selected to confer a hardness of at least 400 HV, a melting point below 1000° C. and improved processibility to the alloy.

Abstract: A composite material combining—a precious metal or an alloy containing a precious metal—and a boron-based ceramic having a melting point greater than that of said precious metal and a density at most equal to 4 g/cm3.

Abstract: A composite material combining—a precious metal or an alloy containing a precious metal—and a boron-based ceramic having a melting point greater than that of said precious metal and a density at most equal to 4 g/cm3.

Abstract: A composite material combining—a precious metal or an alloy containing a precious metal—and a boron-based ceramic having a melting point greater than that of said precious metal and a density at most equal to 4 g/cm3.

Abstract: An article made of an alloy of the general formula Pt1-a-bMa(B1-xMdx)b in which i) M stands for one or a mixture of metallic element(s) of the group Zr, Ti, Fe, Ni, Co, Cu, Pd, Ag, Al; ii) Md stands for one or a mixture of several metalloids of the group Si, P, C, S, As, Ge; iii) a is smaller than 0.2; iv) b is comprised between 0.2 and 0.5; v) x is comprised between 0 and 0.8; vi) the overall P content, if present, is less than 10 atomic percent the proportions of the elements forming the alloy having been selected to confer a hardness of at least 400 HV, a melting point below 1000° C. and improved processibility to the alloy.

Abstract: A composite material combining—a precious metal or an alloy containing a precious metal—and a boron-based ceramic having a melting point greater than that of said precious metal and a density at most equal to 4 g/cm3.

Abstract: A heat sink that is particularly suitable for semiconductor components is made from a diamond-containing composite material. In addition to a diamond fraction amounting to 40-90% by volume, the composite material also contains 7 to 59% by volume copper or a copper-rich phase (with Cu>80 at. %) and 0.01 to 20% by volume boron or a boron-rich phase (with B>50 at. %). The bonding of copper to the diamond grains can be considerably improved by the addition of boron, with the result that a high thermal conductivity can be achieved. The heat sink component is preferably produced with an unpressurized and pressure-assisted infiltration technique.

Abstract: A heat sink that is particularly suitable for semiconductor components is made from a diamond-containing composite material. In addition to a diamond fraction amounting to 40-90% by volume, the composite material also contains 7 to 59% by volume copper or a copper-rich phase (with Cu>80 at. %) and 0.01 to 20% by volume boron or a boron-rich phase (with B>50 at. %). The bonding of copper to the diamond grains can be considerably improved by the addition of boron, with the result that a high thermal conductivity can be achieved. The heat sink component is preferably produced with an unpressurized and pressure-assisted infiltration technique.

Abstract: A saw wire, in particular for use in a wire saw, with at least one saw pearl having an approximately cylindrical outer shape. The saw pearl has hard members bound into a fixed solid binding material. In order to reach a high initial cutting performance with a newly inserted saw wire, each saw pearl mounted on the saw wire has an area with a larger outer circumference and an area with a smaller outer circumference.