Abstract: Described herein is a field effect transistor sensor including: a substrate, a source electrode, a drain electrode, a gate electrode functionalized with a layer of biological recognition elements, a source-drain channel and a semiconductor layer. The layer of biological recognition elements of the gate electrode is patterned into a plurality of uncoupled domains.

Abstract: A system for biological assay includes a first plate having a plurality of protrusions, a second plate configured for mating with said first plate, the second plate including a plurality of receptacles, each receptacle being configured to receive at least a portion of a corresponding one of said protrusions upon mating of the first plate with the second plate, wherein each protrusion includes a gate electrode configured for facing the respective receptacle upon mating of the first plate with the second plate, and wherein each receptacle further includes at least one source-drain channel operatively associated to a gate electrode carried by a respective protrusion upon mating of the first plate with the second plate.

Abstract: Described herein is a field effect transistor sensor including: a substrate, a source electrode, a drain electrode, a gate electrode functionalized with a layer of biological recognition elements, a source-drain channel and a semiconductor layer. The layer of biological recognition elements of the gate electrode is patterned into a plurality of uncoupled domains.

Abstract: A field effect transistor sensor includes: a source-drain channel, a semiconductor layer on said source-drain channel, a first gate electrode arranged above said semiconductor layer, a first well enclosing said source-drain channel, said semiconductor layer and said first gate electrode, the first well being configured to be filled, in use, with a first liquid, particularly a gating electrolyte, a second gate electrode arranged above the first gate electrode and exposed to an interior of the first well. Also disclosed is an array device including an array of field effect transistor sensors according to the above.

Abstract: A method of functionalization of a gate electrode of a field-effect transistor sensor includes forming a layer of biological recognition elements on a surface of said gate electrode, wherein said layer of biological recognition elements includes a self-assembled structure of one or more specific-binding-pair-forming substances (anti-hIg, anti-IgG, anti-IgM). The layer of biological recognition elements is treated with a solution containing a blocking agent to fill vacancies and prevent nonspecific binding in the self-assembled structure. One or more specific-binding-pair-forming substances immobilized in said layer of biological recognition elements are packed at a density of 0.1×104 ?m?2 and 10×104 ?m?2, preferably between 1×104 ?m?2 and 2×104 ?m?2.

Abstract: A transistor includes at least one conductive layer, at least one gate dielectric layer and at least one semiconducting film deposited on top of a receptor molecule layer previously deposited or covalently linked to the surface of the gate dielectric. The layer of biological material includes single or double layers of phospholipids, layers made of proteins such as receptors, antibodies, ionic channels and enzymes, single or double layers of phospholipids with inclusion or anchoring of proteins such as: receptors, antibodies, ionic channels and enzymes, layers made of oligonucleotide (DNA, RNA, PNA) probes, layers made of cells or viruses, layers made of synthetic receptors for example molecules or macromolecules similar to biological receptors for properties, reactivity or steric aspects.

Abstract: A transistor includes at least one conductive layer, at least one gate dielectric layer and at least one semiconducting film deposited on top of a receptor molecule layer previously deposited or covalently linked to the surface of the gate dielectric. The layer of biological material includes single or double layers of phospholipids, layers made of proteins such as receptors, antibodies, ionic channels and enzymes, single or double layers of phospholipids with inclusion or anchoring of proteins such as: receptors, antibodies, ionic channels and enzymes, layers made of oligonucleotide (DNA, RNA, PNA) probes, layers made of cells or viruses, layers made of synthetic receptors for example molecules or macromolecules similar to biological receptors for properties, reactivity or steric aspects.

Abstract: This invention pertains to gaseous analytes sensor devices comprising organic thin film transistor and, in particular, sensors able to perform the enantiomeric discrimination of gaseous analytes.

Abstract: This invention pertains to gaseous analytes sensor devices comprising organic thin film transistor and, in particular sensors able to perform the enantiomeric discrimination of gaseous analytes. The organic thin films are characterized by comprising a compound of formula (I).

Abstract: Disclosed are organic thin film transistors that can be either n-channel or p-channel transistors, depending on biasing conditions. Such transistors are expected to find wide use in complementary circuits. A specific embodiment of the inventive transistor comprises a 15 nm thick layer of &agr;-6T with a 40 nm thick layer of C60 thereon. The latter was protected against degradation by the ambient by means of an appropriate electrically inert layer, specifically by a 40 nm &agr;-6T layer.

Abstract: Articles according to the invention comprise an improved organic thin film transistor (TFT) that can have substantially higher source/drain current on/off ratio than conventional organic TFTs. An exemplary TFT according to the invention comprises, in addition to a p-type first organic material layer (e.g., .alpha.-6T), an n-type second organic material layer (e.g., Alq) in contact with the first material layer. TFTs according to the invention can be advantageously used in, for instance, active liquid crystal displays and electronic memories.

Abstract: Organic thin film transistors having improved properties (e.g., on/off ratio>10.sup.5 at 20.degree. C.) are disclosed. The improved transistors comprise an organic active layer of low conductivity (<5.times.10.sup.-8 S/cm at 20.degree. C., preferably less than 10.sup.-8 or even 10.sup.-9 S/cm). A method of producing such materials is disclosed. Rapid thermal annealing was found to have beneficial results. An exemplary and preferred material is .alpha.-hexathienylene (.alpha.-6T). The improved transistors are expected to find use for, e.g., active liquid crystal displays and for memories.