Abstract: Embodiments of an improved memory architecture by processing data inside of the memory device are described. In some embodiments, the memory device can store neural network layers, such as a systolic flow engine, in non-volatile memory and/or a separate DRAM memory. Central processing unit (CPU) of a host system can delegate the execution of a neural network to the memory device. Advantageously, neural network processing in the memory device can be scalable, with the ability to process large amounts of data.

Abstract: Apparatuses, systems, and methods are disclosed for a chip with phase change memory (PCM) and magnetoresistive random access memory (MRAM). An apparatus includes a semiconductor circuit formed over a substrate of a chip. An apparatus includes a PCM array formed over a semiconductor circuit. An apparatus includes an MRAM array formed over a semiconductor circuit.

Abstract: Apparatuses, systems, and methods are disclosed for a chip with phase change memory (PCM) and magnetoresistive random access memory (MRAM). An apparatus includes a semiconductor circuit formed over a substrate of a chip. An apparatus includes a PCM array formed over a semiconductor circuit. An apparatus includes an MRAM array formed over a semiconductor circuit.

Abstract: Systems, methods, and firmware for operating data storage devices and storage processors are provided herein. In one example, a data storage device is provided. The data storage device includes phase change media on which to write data, and a processing system configured to identify a write process to at least obfuscate an acoustic signature associated with writing the data on the phase change media and write the data to the phase change media in accordance with the write process.

Abstract: A data storage system includes a memory circuit that has memory cells and a control circuit that is operable to receive data bits provided for storage in the memory cells. The control circuit is operable to receive a first matrix. Each row of the first matrix corresponds to a unique one of the data bits. The control circuit is operable to generate a second matrix having only the rows of the first matrix that correspond to the data bits provided for storage in a subset of the memory cells having stuck-at faults. The control circuit is operable to generate a third matrix having linearly independent columns of the second matrix. The control circuit is operable to encode the data bits to generate encoded data bits and redundant bits using the third matrix.

Abstract: A data storage system has a memory circuit that comprises memory cells and a control circuit that receives data bits provided for storage in the memory cells. The control circuit encodes the data bits to generate a first set of redundant bits and encoded data bits, such that the encoded data bits selected for storage in a first subset of the memory cells with first stuck-at faults have digital values of corresponding ones of the first stuck-at faults. The control circuit encodes the first set of redundant bits to generate a second set of redundant bits. The control circuit performs logic functions on the second set of redundant bits and the encoded data bits to generate a third set of redundant bits, such that redundant bits in the third set of redundant bits selected for storage in a second subset of the memory cells with second stuck-at faults have digital values of corresponding ones of the second stuck-at faults.

Abstract: Systems, methods, and firmware for operating data storage devices and storage processors are provided herein. In one example, a data storage device is provided. The data storage device includes phase change media on which to write data, and a processing system configured to identify a write process to at least obfuscate an acoustic signature associated with writing the data on the phase change media and write the data to the phase change media in accordance with the write process.

Abstract: A data storage system includes a memory circuit and a control circuit. The control circuit is operable to receive data bits provided for storage in memory cells of the memory circuit. The control circuit is operable to compare each of the data bits provided for storage in a corresponding one of the memory cells having a stuck-at fault value to the stuck-at fault value. The control circuit is operable to generate encoded data bits by inverting each of the data bits having a different value than the stuck-at fault value of the corresponding one of the memory cells and by maintaining a digital value of each of the data bits having the stuck-at fault value of the corresponding one of the memory cells. The control circuit is operable to prevent any of the data bits from being stored in the memory cells determined to have unstable values. The control circuit is operable to generate redundant bits that indicate at least one operation to perform on the encoded data bits to regenerate the data bits.

Abstract: A data storage system includes a memory circuit having memory cells and a control circuit. The control circuit is operable to receive data bits provided for storage in the memory cells. A subset of the memory cells have predetermined stuck-at faults. The control circuit is operable to compute a binomial coefficient for each of the predetermined stuck-at faults based on a bit position of a corresponding one of the predetermined stuck-at faults within the memory cells. The control circuit is operable to add together the binomial coefficients to generate an encoded number using a combinatorial number system. The control circuit is operable to generate a first set of redundant bits that indicate the encoded number. The first set of redundant bits are used to decode bits read from the memory cells to regenerate the data bits.

Abstract: A data storage system includes a memory circuit and a control circuit. The control circuit is operable to receive data bits provided for storage in memory cells of the memory circuit. The control circuit is operable to compare each of the data bits provided for storage in a corresponding one of the memory cells having a stuck-at fault to a value of the stuck-at fault, and to invert each of the data bits having a different value than the value of the stuck-at fault of the corresponding one of the memory cells to generate encoded data bits. The control circuit is operable to generate redundant bits that indicate the encoded data bits to invert to regenerate the data bits.

Abstract: A data storage system includes a memory circuit comprising memory cells and a control circuit. The control circuit generates a first set of redundant bits indicating bit positions of the memory cells having stuck-at faults in response to a first write operation if a first rate of the stuck-at faults in the memory cells is greater than a first threshold. The control circuit is operable to encode data bits to generate encoded data bits and a second set of redundant bits that indicate a transformation performed on the data bits to generate the encoded data bits in response to a second write operation if a second rate of stuck-at faults in the memory cells is greater than a second threshold. The encoded data bits stored in the memory cells having the stuck-at faults match digital values of corresponding ones of the stuck-at faults.

Abstract: A data storage system includes a memory circuit comprising memory cells and a control circuit. The control circuit generates a first set of redundant bits indicating bit positions of the memory cells having stuck-at faults in response to a first write operation if a first rate of the stuck-at faults in the memory cells is greater than a first threshold. The control circuit is operable to encode data bits to generate encoded data bits and a second set of redundant bits that indicate a transformation performed on the data bits to generate the encoded data bits in response to a second write operation if a second rate of stuck-at faults in the memory cells is greater than a second threshold. The encoded data bits stored in the memory cells having the stuck-at faults match digital values of corresponding ones of the stuck-at faults.

Abstract: A data storage system includes a memory circuit having memory cells and a control circuit. The control circuit is operable to receive data bits provided for storage in the memory cells. A subset of the memory cells have predetermined stuck-at faults. The control circuit is operable to compute a binomial coefficient for each of the predetermined stuck-at faults based on a bit position of a corresponding one of the predetermined stuck-at faults within the memory cells. The control circuit is operable to add together the binomial coefficients to generate an encoded number using a combinatorial number system. The control circuit is operable to generate a first set of redundant bits that indicate the encoded number. The first set of redundant bits are used to decode bits read from the memory cells to regenerate the data bits.

Abstract: A data storage system has a memory circuit that comprises memory cells and a control circuit that receives data bits provided for storage in the memory cells. The control circuit encodes the data bits to generate a first set of redundant bits and encoded data bits, such that the encoded data bits selected for storage in a first subset of the memory cells with first stuck-at faults have digital values of corresponding ones of the first stuck-at faults. The control circuit encodes the first set of redundant bits to generate a second set of redundant bits. The control circuit performs logic functions on the second set of redundant bits and the encoded data bits to generate a third set of redundant bits, such that redundant bits in the third set of redundant bits selected for storage in a second subset of the memory cells with second stuck-at faults have digital values of corresponding ones of the second stuck-at faults.

Abstract: A data storage system includes a memory circuit that has memory cells and a control circuit that is operable to receive data bits provided for storage in the memory cells. The control circuit is operable to receive a first matrix. Each row of the first matrix corresponds to a unique one of the data bits. The control circuit is operable to generate a second matrix having only the rows of the first matrix that correspond to the data bits provided for storage in a subset of the memory cells having stuck-at faults. The control circuit is operable to generate a third matrix having linearly independent columns of the second matrix. The control circuit is operable to encode the data bits to generate encoded data bits and redundant bits using the third matrix.

Abstract: A disk pack, comprising at least one hard disk, is rotatably mounted to a housing. The disk pack defines an axis of rotation and a radial direction relative to the axis. At least one actuator mounted to the housing is coupled with a suspension and is movable relative to the disk pack. A slider, comprising a slider body and a head configured to read data from and write data to at least one hard disk, is coupled with the suspension. A first suspension electrical interconnect is configured to electrically couple a first signal conducting pathway with the slider and with a first non-terminated signal pathway. A second suspension electrical interconnect is configured to electrically couple a second signal conducting pathway with the slider and with a second non-terminated signal pathway. The length of the second non-terminated signal pathway is selected to achieve a desired impedance level.

Abstract: Impedance compensation features are used along the transmission-line path between a transmitter/driver/source and the receiver/transducer to compensate for the impedance discontinuities or mismatches (for example, those caused by physical interconnection features) and/or to improve the frequency response of the signal transfer along the transmission line. The impedance compensation features are non-uniformities with impedance characteristics selected to compensate for the target impedance discontinuities. The compensation features can be non-uniformities (geometric structures designed to have specific impedance characteristics) in the electrically conductive traces that are integrated in the interconnect transmission line between the transmitter/driver/source and the receiver/transducer. The effective impedance level of the transmission line can be lowered or raised using the compensation features.

Abstract: In a method of biasing a slider, a bias voltage is generated for biasing a slider. The bias voltage is integratedly coupled to a conductive body of the slider via an existing signal path of the slider such that the slider is biased with the bias voltage. The existing signal path is primarily used for conveying another signal to or from the slider but at least sometimes conveys the bias voltage to the conductive body in an integral fashion along with another signal.

Abstract: A disk pack, comprising at least one hard disk, is rotatably mounted to a housing. The disk pack defines an axis of rotation and a radial direction relative to the axis. At least one actuator mounted to the housing is coupled with a suspension and is movable relative to the disk pack. A slider, comprising a slider body and a head configured to read data from and write data to at least one hard disk, is coupled with the suspension. A first suspension electrical interconnect is configured to electrically couple a first signal conducting pathway with the slider and with a first non-terminated signal pathway. A second suspension electrical interconnect is configured to electrically couple a second signal conducting pathway with the slider and with a second non-terminated signal pathway. The length of the second non-terminated signal pathway is selected to achieve a desired impedance level.

Abstract: A signaling apparatus and method are described that use reflected signals to increase the total current delivered to a receiver. Dynamic source-side transmission line termination control is employed to generate reflected signals that constructively add to a nonreflected signal to enhance the signal at the receiver. Switching controls selectively connect and disconnect the transmission line source-side termination resistors to either provide signal termination or remove it. Driver designs using either voltage or current sources for use in signaling systems (including, for example, magnetic storage devices with inductive coil based write heads) are described.