Patents by Inventor Lulu Peng
Lulu Peng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11935678Abstract: An inductive device may be provided, including a first winding layer, a second winding layer arranged over the first winding layer and connected to the first winding layer to form a plurality of turns around a first axis, and a magnetic core arranged vertically between the first winding layer and the second winding layer. The magnetic core may include a portion entirely over the first winding layer and entirely under the second winding layer, where this portion may include a magnetic segment and a non-magnetic segment arranged laterally adjacent to each other along the first axis.Type: GrantFiled: December 10, 2020Date of Patent: March 19, 2024Assignee: GLOBALFOUNDARIES SINGAPORE Pte. Ltd.Inventors: Zishan Ali Syed Mohammed, Lulu Peng, Chor Shu Cheng, Yong Chau Ng, Lawrence Selvaraj Susai
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Patent number: 11538751Abstract: A semiconductor device is provided. The semiconductor device comprises an inductor in a far back end of line layer and a capacitor adjacent to and electrically coupled with the inductor. The capacitor comprises a first electrode layer arranged over sidewalls and a bottom surface of a via in a first insulating layer A dielectric layer is provided over the first electrode layer. A second electrode layer is provided over the dielectric layer and a metal fill layer is provided over the second electrode layer. The metal fill layer has a top surface at least level with a top surface of the first insulating layer.Type: GrantFiled: September 3, 2020Date of Patent: December 27, 2022Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.Inventors: Lulu Peng, Nur Aziz Yosokumoro, Zishan Ali Syed Mohammed, Lawrence Selvaraj Susai, Chor Shu Cheng, Yong Chau Ng
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Patent number: 11476043Abstract: An inductive device may be provided, including a substrate and an inductive structure arranged over the substrate. The inductive structure may include a bottom metal winding layer; a top metal winding layer arranged further away from the substrate than the bottom metal winding layer; a magnetic core layer arranged between the bottom metal winding layer and the top metal winding layer; a connector arranged to electrically connect the bottom metal winding layer and the top metal winding layer; and a top metal ring element arranged around the top metal winding layer, spaced apart from the top metal winding layer. The inductive device may further include a guard ring element arranged under the top metal ring element and around the magnetic core layer, spaced apart from the magnetic core layer; wherein the guard ring element may include a magnetic material.Type: GrantFiled: December 30, 2019Date of Patent: October 18, 2022Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.Inventors: Zishan Ali Syed Mohammed, Lulu Peng, Lawrence Selvaraj Susai, Chor Shu Cheng
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Patent number: 11444168Abstract: A transistor device may be provided, including a substrate; a buffer layer arranged over the substrate; a source terminal, a drain terminal, and a gate terminal arranged over the buffer layer; a barrier layer arranged over the buffer layer; and a passivation layer arranged over the barrier layer. The gate terminal may be arranged laterally between the source terminal and the drain terminal, the barrier layer may include a recess laterally between the gate terminal and the drain terminal, a part of the gate terminal may be arranged over the passivation layer and the passivation layer may extend into the recess of the barrier layer.Type: GrantFiled: November 2, 2020Date of Patent: September 13, 2022Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.Inventors: Jiacheng Lei, James Jerry Joseph, Khee Yong Lim, Lulu Peng, Lawrence Selvaraj Susai
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Publication number: 20220189673Abstract: An inductive device may be provided, including a first winding layer, a second winding layer arranged over the first winding layer and connected to the first winding layer to form a plurality of turns around a first axis, and a magnetic core arranged vertically between the first winding layer and the second winding layer. The magnetic core may include a portion entirely over the first winding layer and entirely under the second winding layer, where this portion may include a magnetic segment and a non-magnetic segment arranged laterally adjacent to each other along the first axis.Type: ApplicationFiled: December 10, 2020Publication date: June 16, 2022Inventors: Zishan Ali SYED MOHAMMED, Lulu PENG, Chor Shu CHENG, Yong Chau NG, Lawrence Selvaraj SUSAI
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Publication number: 20220140096Abstract: A transistor device may be provided, including a substrate; a buffer layer arranged over the substrate; a source terminal, a drain terminal, and a gate terminal arranged over the buffer layer; a barrier layer arranged over the buffer layer; and a passivation layer arranged over the barrier layer. The gate terminal may be arranged laterally between the source terminal and the drain terminal, the barrier layer may include a recess laterally between the gate terminal and the drain terminal, a part of the gate terminal may be arranged over the passivation layer and the passivation layer may extend into the recess of the barrier layer.Type: ApplicationFiled: November 2, 2020Publication date: May 5, 2022Inventors: Jiacheng LEI, James JERRY JOSEPH, Khee Yong LIM, Lulu PENG, Lawrence Selvaraj SUSAI
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Publication number: 20220068809Abstract: A semiconductor device is provided. The semiconductor device comprises an inductor in a far back end of line layer and a capacitor adjacent to and electrically coupled with the inductor. The capacitor comprises a first electrode layer arranged over sidewalls and a bottom surface of a via in a first insulating layer A dielectric layer is provided over the first electrode layer. A second electrode layer is provided over the dielectric layer and a metal fill layer is provided over the second electrode layer. The metal fill layer has a top surface at least level with a top surface of the first insulating layer.Type: ApplicationFiled: September 3, 2020Publication date: March 3, 2022Inventors: LULU PENG, NUR AZIZ YOSOKUMORO, ZISHAN ALI SYED MOHAMMED, LAWRENCE SELVARAJ SUSAI, CHOR SHU CHENG, YONG CHAU NG
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Publication number: 20210202165Abstract: An inductive device may be provided, including a substrate and an inductive structure arranged over the substrate. The inductive structure may include a bottom metal winding layer; a top metal winding layer arranged further away from the substrate than the bottom metal winding layer; a magnetic core layer arranged between the bottom metal winding layer and the top metal winding layer; a connector arranged to electrically connect the bottom metal winding layer and the top metal winding layer; and a top metal ring element arranged around the top metal winding layer, spaced apart from the top metal winding layer. The inductive device may further include a guard ring element arranged under the top metal ring element and around the magnetic core layer, spaced apart from the magnetic core layer; wherein the guard ring element may include a magnetic material.Type: ApplicationFiled: December 30, 2019Publication date: July 1, 2021Inventors: Zishan Ali SYED MOHAMMED, Lulu PENG, Lawrence Selvaraj SUSAI, Chor Shu CHENG
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Publication number: 20210111243Abstract: A semiconductor device may include: a substrate; a protective region provided over the substrate; and a core structure enclosed by the protective region. The core structure may include a core material etchable by a chemical solution. The protective region may include a protective material resistant to etching by the chemical solution. The core structure may have a first side and a second side opposite to the first side, the first side being closer to the substrate than the second side. The core structure may be narrowest at the first side of the core structure.Type: ApplicationFiled: October 15, 2019Publication date: April 15, 2021Inventors: Lawrence Selvaraj SUSAI, Chor Shu CHENG, Yong Chau NG, Lulu PENG, Zishan Ali SYED MOHAMMED, Nuraziz YOSOKUMORO
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Patent number: 10825888Abstract: Integrated circuits (ICs) and method for forming IC devices are presented. In one embodiment, a method of forming a device with an integrated magnetic component using 3-dimensional (3-D) printing is disclosed. The method includes providing a substrate with a base dielectric layer, the base dielectric layer serves as a base for the integrated magnetic component. A first metal layer is formed on the substrate by spray coating metal powder over the substrate and performing selective laser melting on the metal powder. A magnetic core is formed on the substrate by spray coating magnet powder over the substrate and performing selective laser sintering on the magnet powder. A second metal layer is formed on the substrate by spray coating metal powder over the substrate and performing selective laser melting on the metal powder. A patterned dielectric layer separates the first and second metal layers and the magnetic core.Type: GrantFiled: June 27, 2019Date of Patent: November 3, 2020Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.Inventors: Lulu Peng, Donald Ray Disney, Lawrence Selvaraj Susai, Rajesh Sankaranarayanan Nair
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Patent number: 10784332Abstract: Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, a method of producing an integrated circuit includes forming a lower conductor element overlying a substrate, and forming a magnetic stack layer overlying the lower conductor element. A waste portion of the magnetic stack layer is removed with a wet etchant to produce a magnetic core. The wet etchant includes hydrofluoric acid, a second acid different than the hydrofluoric acid, an oxidizer, and a solvent.Type: GrantFiled: March 22, 2018Date of Patent: September 22, 2020Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.Inventors: Liang Li, Yun Ling Tan, Kai Hung Alex See, Lulu Peng, Donald Ray Disney
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Publication number: 20190319085Abstract: Integrated circuits (ICs) and method for forming IC devices are presented. In one embodiment, a method of forming a device with an integrated magnetic component using 3-dimensional (3-D) printing is disclosed. The method includes providing a substrate with a base dielectric layer, the base dielectric layer serves as a base for the integrated magnetic component. A first metal layer is formed on the substrate by spray coating metal powder over the substrate and performing selective laser melting on the metal powder. A magnetic core is formed on the substrate by spray coating magnet powder over the substrate and performing selective laser sintering on the magnet powder. A second metal layer is formed on the substrate by spray coating metal powder over the substrate and performing selective laser melting on the metal powder. A patterned dielectric layer separates the first and second metal layers and the magnetic core.Type: ApplicationFiled: June 27, 2019Publication date: October 17, 2019Inventors: Lulu PENG, Donald Ray DISNEY, Lawrence Selvaraj SUSAI, Rajesh Sankaranarayanan NAIR
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Patent number: 10446639Abstract: Integrated circuits (ICs) and method for forming IC devices are presented. In one embodiment, a method of forming a device with an integrated magnetic component using 3-dimensional (3-D) printing is disclosed. The method includes providing a substrate with a base dielectric layer, the base dielectric layer serves as a base for the integrated magnetic component. A first metal layer is formed on the substrate by spray coating metal powder over the substrate and performing selective laser melting on the metal powder. A magnetic core is formed on the substrate by spray coating magnet powder over the substrate and performing selective laser sintering on the magnet powder. A second metal layer is formed on the substrate by spray coating metal powder over the substrate and performing selective laser melting on the metal powder. A patterned dielectric layer separates the first and second metal layers and the magnetic core.Type: GrantFiled: March 29, 2017Date of Patent: October 15, 2019Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.Inventors: Lulu Peng, Donald Ray Disney, Lawrence Selvaraj Susai, Rajesh Sankaranarayanan Nair
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Publication number: 20190296100Abstract: Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, a method of producing an integrated circuit includes forming a lower conductor element overlying a substrate, and forming a magnetic stack layer overlying the lower conductor element. A waste portion of the magnetic stack layer is removed with a wet etchant to produce a magnetic core. The wet etchant includes hydrofluoric acid, a second acid different than the hydrofluoric acid, an oxidizer, and a solvent.Type: ApplicationFiled: March 22, 2018Publication date: September 26, 2019Inventors: Liang Li, Yun Ling Tan, Kai Hung Alex See, Lulu Peng, Donald Ray Disney
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Publication number: 20180286940Abstract: Integrated circuits (ICs) and method for forming IC devices are presented. In one embodiment, a method of forming a device with an integrated magnetic component using 3-dimensional (3-D) printing is disclosed. The method includes providing a substrate with a base dielectric layer, the base dielectric layer serves as a base for the integrated magnetic component. A first metal layer is formed on the substrate by spray coating metal powder over the substrate and performing selective laser melting on the metal powder. A magnetic core is formed on the substrate by spray coating magnet powder over the substrate and performing selective laser sintering on the magnet powder. A second metal layer is formed on the substrate by spray coating metal powder over the substrate and performing selective laser melting on the metal powder. A patterned dielectric layer separates the first and second metal layers and the magnetic core.Type: ApplicationFiled: March 29, 2017Publication date: October 4, 2018Inventors: Lulu PENG, Donald Ray DISNEY, Lawrence Selvaraj SUSAI, Rajesh Sankaranarayanan NAIR
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Patent number: 10068694Abstract: Integrated circuits and coupled inductors with isotropic magnetic cores, and methods for fabricating integrated circuits and coupled inductors with isotropic magnetic cores are provided. In an embodiment, a method for fabricating an integrated circuit is provided. The method includes providing a semiconductor substrate and forming an isotropic magnetic core bottom yoke over the semiconductor substrate. Further, the method includes forming an inductor coil over the isotropic magnetic core bottom yoke. Also, the method includes forming isotropic magnetic core sidewalls over the isotropic magnetic core bottom yoke and around the inductor coil. The method includes forming an isotropic magnetic core top yoke over the isotropic magnetic core sidewalls and over the inductor coil.Type: GrantFiled: March 14, 2018Date of Patent: September 4, 2018Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.Inventors: Lulu Peng, Donald Ray Disney
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Publication number: 20180204665Abstract: Integrated circuits and coupled inductors with isotropic magnetic cores, and methods for fabricating integrated circuits and coupled inductors with isotropic magnetic cores are provided. In an embodiment, a method for fabricating an integrated circuit is provided. The method includes providing a semiconductor substrate and forming an isotropic magnetic core bottom yoke over the semiconductor substrate. Further, the method includes forming an inductor coil over the isotropic magnetic core bottom yoke. Also, the method includes forming isotropic magnetic core sidewalls over the isotropic magnetic core bottom yoke and around the inductor coil. The method includes forming an isotropic magnetic core top yoke over the isotropic magnetic core sidewalls and over the inductor coil.Type: ApplicationFiled: March 14, 2018Publication date: July 19, 2018Inventors: Lulu Peng, Donald Ray Disney
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Patent number: 9966186Abstract: Integrated circuits and coupled inductors with isotropic magnetic cores, and methods for fabricating integrated circuits and coupled inductors with isotropic magnetic cores are provided. In an embodiment, a coupled inductor includes a first inductor coil arranged around a coil center and a second inductor coil arranged around the coil center. The second inductor coil is interleaved with the first inductor coil, and the first and second inductor coils form an interleaved inductor coil. The coupled inductor further includes an isotropic magnetic core surrounding a portion of the interleaved inductor coil and passing through the coil center.Type: GrantFiled: December 29, 2016Date of Patent: May 8, 2018Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.Inventors: Lulu Peng, Donald Ray Disney
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Patent number: 9761545Abstract: An isolator is configured by a transmission circuit, a transformer, and a reception circuit. A first coil of the transformer is disposed on a back surface of a first semiconductor substrate; a transmission circuit and a second coil of the transformer are disposed on a front surface. The first coil is embedded within a coil trench, is led out through an embedded via-metal-film to a substrate front surface, and is electrically connected to the transmission circuit. The second coil is disposed on an insulating layer of the substrate front surface. The reception circuit is disposed on a front surface of a second semiconductor substrate. The second coil and the reception circuit are electrically connected to each other by connecting first and third electrode pads disposed respectively on the front surfaces of the first and second semiconductor substrates through wires.Type: GrantFiled: July 1, 2016Date of Patent: September 12, 2017Assignee: FUJI ELECTRIC CO., LTD.Inventors: Johnny Kin On Sin, Lulu Peng, Rongxiang Wu, Hitoshi Sumida, Yoshiaki Toyoda, Masashi Akahane
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Patent number: D956684Type: GrantFiled: September 28, 2020Date of Patent: July 5, 2022Assignee: SHENZHEN TIG TECHNOLOGY CO., LTDInventors: Lulu Peng, Junfeng Zhang