Patents by Inventor Lumin Li
Lumin Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7874807Abstract: A compressor system is disclosed, comprising a first pump driven by a D/C motor, a second pump driven by an A/C motor, and a switch which allows a user to manually selectively engage of one of the D/C motor or NC motor, including a gauge having a user settable shut-off mechanism which interrupts power to at least one of D/C or A/C motors. Also disclosed is a gauge configured to display system pressure independent of the user settable shut-off mechanism. A gauge having a rotatable bezel with a needle stop comprising a first needle rotatably coupled to a gauge shaft, and a second needle fixable coupled to the gauge shaft, and a spring disposed between the first and second needles, the spring configured to bias the first needle into the second needle so changes in pressure causes rotation of both is also disclosed.Type: GrantFiled: March 29, 2007Date of Patent: January 25, 2011Assignee: Black & Decker Inc.Inventors: Sean D Hill, Lumin Li
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Patent number: 7838086Abstract: A method for processing a substrate is provided. The substrate is placed in a process chamber. A gas is provided from a gas source to the process chamber. A plasma is generated from the gas in the process chamber. The gas flows through a gap adjacent to at least one confinement ring to provide physical confinement of the plasma. Magnetic confinement of the plasma is provided to enhance the physical confinement of the plasma.Type: GrantFiled: October 16, 2008Date of Patent: November 23, 2010Assignee: Lam Research CorporationInventors: Douglas L. Keil, Lumin Li, Eric A. Hudson, Reza Sadjadi, Eric H. Lenz, Rajinder Dhindsa, Ji Soo Kim
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Patent number: 7749353Abstract: A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.Type: GrantFiled: September 21, 2006Date of Patent: July 6, 2010Assignee: Lam Research CorporationInventors: Camelia Rusu, Rajinder Dhindsa, Eric A. Hudson, Mukund Srinivasan, Lumin Li, Felix Kozakevich
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Patent number: 7732728Abstract: A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.Type: GrantFiled: January 17, 2007Date of Patent: June 8, 2010Assignee: Lam Research CorporationInventors: Rajinder Dhindsa, Eric H. Lenz, Andy W. DeSepte, Lumin Li
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Publication number: 20100126847Abstract: A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.Type: ApplicationFiled: January 29, 2010Publication date: May 27, 2010Applicant: Lam Research CorporationInventors: Rajinder Dhindsa, Felix Kozakevich, Lumin Li, Dave Trussell
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Publication number: 20100124822Abstract: A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.Type: ApplicationFiled: January 25, 2010Publication date: May 20, 2010Applicant: Lam Research CorporationInventors: Rajinder Dhindsa, Eric H. Lenz, Andy W. DeSepte, Lumin Li
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Patent number: 7683289Abstract: A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.Type: GrantFiled: December 16, 2005Date of Patent: March 23, 2010Assignee: Lam Research CorporationInventors: Rajinder Dhindsa, Felix Kozakevich, Lumin Li, Dave Trussell
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Patent number: 7632375Abstract: A vacuum plasma processor includes a chamber having a grounded wall and an outlet port. Plasma is excited at a first RF frequency in a chamber region spaced from the wall and outlet port. A structure confines the plasma to the region while enabling gas to flow from the region to the outlet port. RF electric power at a second frequency connected to the confining structure causes the confining structure to be at a potential different from ground to increase the size of a sheath between the plasma and confining structure and increase the confining structure effectiveness. The region includes an electrode connected to ground by a circuit that is series resonant to the first frequency and includes capacitance of the sheath.Type: GrantFiled: December 30, 2004Date of Patent: December 15, 2009Assignee: Lam Research CorporationInventors: Andras Kuthi, Jisoo Kim, Eric Lenz, Rajindar Dhindsa, Lumin Li, Reza Sadjadi
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Publication number: 20090215272Abstract: A method for providing features in an etch layer is provided by forming an organic mask layer over the inorganic mask layer, forming a silicon-containing mask layer over the organic mask layer, forming a patterned mask layer over the silicon-containing mask layer, etching the silicon-containing mask layer through the patterned mask, depositing a polymer over the etched silicon-containing mask layer, depositing a silicon-containing film over the polymer, planarizing the silicon-containing film, selectively removing the polymer leaving the silicon-containing film, etching the organic layer, and etching the inorganic layer.Type: ApplicationFiled: February 5, 2009Publication date: August 27, 2009Applicant: LAM RESEARCH CORPORATIONInventors: S. M. Reza Sadjadi, Lumin Li, Andrew R. Romano
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Publication number: 20090174983Abstract: An electrostatic chuck assembly having a dielectric material and/or having a cavity with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support and an electrostatic chuck ceramic layer. A dielectric layer or insert is located between the conductive support and an electrostatic chuck ceramic layer. A cavity is located in a seating surface of the electrostatic chuck ceramic layer. An embedded pole pattern can be optionally incorporated in the electrostatic chuck assembly. Methods of manufacturing the electrostatic chuck assembly are disclosed as are methods to improve the uniformity of a flux field above a workpiece during a plasma processing process.Type: ApplicationFiled: March 17, 2009Publication date: July 9, 2009Applicant: Lam Research CorporationInventors: Rajinder Dhindsa, Eric Lenz, Lumin Li, Felix Kozakevich
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Publication number: 20090165954Abstract: A vacuum plasma processor includes a chamber having a grounded wall and an outlet port. Plasma is excited at a first RF frequency in a chamber region spaced from the wall and outlet port. A. structure confines the plasma to the region while enabling gas to flow from the region to the outlet port. RF electric power at a second frequency connected to the confining structure causes the confining structure to be at a potential different from ground to increase the size of a sheath between the plasma and confining structure and increase the confining structure effectiveness. The region includes an electrode connected to ground by a circuit that is series resonant to the first frequency and includes capacitance of the sheath.Type: ApplicationFiled: December 30, 2004Publication date: July 2, 2009Applicant: LAM RESEARCH CORPORATIONInventors: Andras Kuthi, Jisoo Kim, Eric Lenz, Rajindar Dhindsa, Lumin Li, Reza Sadjadi
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Patent number: 7525787Abstract: An electrostatic chuck assembly having a dielectric material and/or having a cavity with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support and an electrostatic chuck ceramic layer. A dielectric layer or insert is located between the conductive support and an electrostatic chuck ceramic layer. A cavity is located in a seating surface of the electrostatic chuck ceramic layer. An embedded pole pattern can be optionally incorporated in the electrostatic chuck assembly. Methods of manufacturing the electrostatic chuck assembly are disclosed as are methods to improve the uniformity of a flux field above a workpiece during a plasma processing process.Type: GrantFiled: September 30, 2005Date of Patent: April 28, 2009Assignee: Lam Research CorporationInventors: Rajinder Dhindsa, Eric Lenz, Lumin Li, Felix Kozakevich
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Publication number: 20090041951Abstract: A method for processing a substrate is provided. The substrate is placed in a process chamber. A gas is provided from a gas source to the process chamber. A plasma is generated from the gas in the process chamber. The gas flows through a gap adjacent to at least one confinement ring to provide physical confinement of the plasma. Magnetic confinement of the plasma is provided to enhance the physical confinement of the plasma.Type: ApplicationFiled: October 16, 2008Publication date: February 12, 2009Applicant: LAM RESEARCH CORPORATIONInventors: Douglas L. Keil, Lumin Li, Eric A. Hudson, Reza Sadjadi, Eric H. Lenz, Rajinder Dhindsa, Ji Soo Kim
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Patent number: 7455748Abstract: A plasma processing apparatus for processing a substrate is provided. A plasma processing chamber with chamber walls is provided. A substrate support is provided within the chamber walls. At least one confinement ring is provided, where the confinement ring and the substrate support define a plasma volume. A magnetic source for generating a magnetic field for magnetically enhancing physical confinement provided by the at least one confinement ring is provided.Type: GrantFiled: June 20, 2003Date of Patent: November 25, 2008Assignee: Lam Research CorporationInventors: Douglas L. Keil, Lumin Li, Eric A. Hudson, Reza Sadjadi, Eric H. Lenz, Rajinder Dhindsa, Ji Soo Kim
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Publication number: 20080240933Abstract: A compressor system is disclosed utilizing a first pump driven by an A/C motor and a second pump driven by a D/C motor. A gauge is provided which measures pressure from the system. The gauge utilizes a rotatable bezel which allows an operator to selectively choose the output pressure of the compressor system. The gauge provides a shut-off mechanism for disengaging one of the pumps when a predetermined pressure is reached within the system.Type: ApplicationFiled: March 29, 2007Publication date: October 2, 2008Inventors: Sean D. Hill, Lumin Li
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Patent number: 7405521Abstract: A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes central top and bottom electrodes and a peripheral top and/or bottom electrode arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation frequencies to the exclusion of other frequencies.Type: GrantFiled: August 22, 2003Date of Patent: July 29, 2008Assignee: Lam Research CorporationInventors: Raj Dhindsa, S. M. Reza Sadjadi, Felix Kozakevich, Dave Trussell, Lumin Li, Eric Lenz, Camelia Rusu, Mukund Srinivasan, Aaron Eppler, Jim Tietz, Jeffrey Marks
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Publication number: 20080171444Abstract: A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.Type: ApplicationFiled: January 17, 2007Publication date: July 17, 2008Applicant: Lam Research CorporationInventors: Rajinder Dhindsa, Eric H. Lenz, Andy W. DeSepte, Lumin Li
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Publication number: 20080006205Abstract: An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The upper electrode is disposed above the lower electrode and is electrically isolated from the chamber. A voltage source is connected to the upper electrode. The voltage source is defined to control an electric potential of the upper electrode relative to the chamber. The electric potential of the upper electrode as controlled by the voltage source is capable of influencing an electric potential of the plasma to be generated between the lower and upper electrodes.Type: ApplicationFiled: July 10, 2006Publication date: January 10, 2008Inventors: Douglas Keil, Lumin Li, Reza Sadjadi, Eric Hudson, Eric Lenz, Rajinder Dhindsa
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Publication number: 20070181530Abstract: A method of forming features in an etch layer disposed below a mask with features is provided. The mask is conditioned. The conditioning, comprising providing a conditioning gas consisting essentially of at least one noble gas, forming a plasma from the conditioning gas, and exposing the mask to the plasma from the conditioning gas. The features of the mask are shrunk. Features are etched into the etch layer through the shrunk features of the mask.Type: ApplicationFiled: February 8, 2006Publication date: August 9, 2007Inventors: Zhi-Song Huang, S.M. Sadjadi, Lumin Li, Conan Chiang
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Publication number: 20070141729Abstract: A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.Type: ApplicationFiled: December 16, 2005Publication date: June 21, 2007Applicant: Lam Research CorporationInventors: Rajinder Dhindsa, Felix Kozakevich, Lumin Li, Dave Trussell