Abstract: A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.

Abstract: Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.

Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

Abstract: Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.

Abstract: A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.

Abstract: A second-harmonic generation nonlinear frequency converter includes a nonlinear optical crystal. The nonlinear optical crystal includes a plurality of sections. The sections connect to each other in sequence, and each section has a phase different from others. Each of the phases includes a positive domain and a negative domain. Each of the sections includes a plurality of quasi-phase-matching structures. The quasi-phase-matching structures connect to each other in sequence and have the same phase in one section.

Abstract: A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

Abstract: The embodiment provides an antireflection structure and a method for fabricating the same. The antireflection structure includes a substrate having a plurality of protruding structures adjacent to one another, thereby allowing light to transmit through. And a dielectric structural layer covers a plurality of the protruding structures.

Abstract: A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

Abstract: Provided are an apparatus and a method for converting laser energy, characterized by employing an optical parametric oscillator for converting light of a green laser wavelength into light of a blue or red laser wavelength via a phase matching structure, by means of a non-linear optical crystal having a one-dimensional quasi-phase matching structure with a single grating period under appropriately-controlled temperature conditions. The non-linear optical crystal with the single grating period facilitates optical parametric oscillation and second harmonic generation to thereby enable green-to-blue wavelength conversion with a slope efficiency greater than 20%. Under 400 mW green light pump laser action, a periodically poled LiTaO3 crystal with a crystal length of 15 mm and without a resistant reflective plating film on its end face is capable of outputting a blue light laser beam of 56 mW.

Abstract: A thin film transistor includes a channel layer. The channel layer has a plurality of stacked oxide layers. The oxide layers are made of at least two different oxide materials. The channel layer modulates a threshold voltage of the thin film transistor. An insulating interface layer is formed between the channel layer and an insulating dielectric layer, thereby transforming the thin film transistor from a depletion type transistor to an enhanced type transistor.

Abstract: A phase-change material and a memory unit using the phase-change material are provided. The phase-change material is in a single crystalline state and includes a compound of a metal oxide or nitroxide, wherein the metal is at least one selected from a group consisting of indium, gallium and germanium. The memory unit includes a substrate; at least a first contact electrode formed on the substrate; a dielectric layer disposed on the substrate and formed with an opening for a layer of the phase-change material to be formed therein; and at least a second contact electrode disposed on the dielectric layer. As the phase-change material is in a single crystalline state and of a great discrepancy between high and low resistance states, the memory unit using the phase-changed material can achieve a phase-change characteristic rapidly by pulse voltage and avert any incomplete reset while with a low critical power.

Abstract: A phase-change material and a memory unit using the phase-change material are provided. The phase-change material is in a single crystalline state and includes a compound of a metal oxide or nitroxide, wherein the metal is at least one selected from a group consisting of indium, gallium and germanium. The memory unit includes a substrate; at least a first contact electrode formed on the substrate; a dielectric layer disposed on the substrate and formed with an opening for a layer of the phase-change material to be formed therein; and at least a second contact electrode disposed on the dielectric layer. As the phase-change material is in a single crystalline state and of a great discrepancy between high and low resistance states, the memory unit using the phase-changed material can achieve a phase-change characteristic rapidly by pulse voltage and avert any incomplete reset while with a low critical power.

Abstract: A light-scattering structure with micron-scale or submicron-scale protruding portions is provided to improve the light extraction efficiency of light emitting devices. The protruding portions function as scattering sites and can be assembled closely. A method of forming a light-scattering structure is also provided, wherein all the conventional substrate materials can be used for the substrate of the light-scattering structure, and scattering sites of submicron-scale, micron-scale or larger size can be fabricated.

Abstract: A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

Abstract: A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

Abstract: A method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes includes forming a transparent conductive film on a GaN layer, forming a transparent conductive hetero-junction of opposing electrical characteristics on a transparent conductive film on the surface of the GaN layer through an ion diffusion process, and laying a metallic thick film on the surface of the transparent conductive hetero-junction for wiring process in the later fabrication operation. Thus through the electron and hole tunneling effect in the ion diffusion process the Fermi level of the hetero-junction may be improved to form an ohmic contact electrode.

Abstract: A method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes includes forming a transparent conductive film on a GaN layer, forming a transparent conductive hetero-junction of opposing electrical characteristics on a transparent conductive film on the surface of the GaN layer through an ion diffusion process, and laying a metallic thick film on the surface of the transparent conductive hetero-junction for wiring process in the later fabrication operation. Thus through the electron and hole tunneling effect in the ion diffusion process the Fermi level of the hetero-junction may be improved to form an ohmic contact electrode.

Abstract: The present invention relates to a method to control the nucleation and transverse motion of 180° inverted domains in ferroelectric nonlinear crystals. It includes a process composing of a high temperature oxidation of the first metal layer and a pulsed field poling of the second electrodes. The main object of present invention is to provide domain inversion of ferroelectric nonlinear crystals with field control the nucleation and transverse motion of inverted domains and two-dimension nonlinear photonic crystals for time-domain multiple-wave simultaneous lasers and space filter function. Another object of present invention is to provide space-charge effect for screened edge field beneath the metal electrode, The other object of present invention is to provide the constraint of inverted domain nucleation in the oxidized electrode for arbitrarily geometrical form of 2D ferroelectric lattice structure.