Patents by Inventor Luona Goh
Luona Goh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8999863Abstract: A stress liner having first and second stress type is provided over a first type and a second type transistor to improve reliability and performance without incurring area penalties or layout deficiencies.Type: GrantFiled: June 5, 2008Date of Patent: April 7, 2015Assignee: GlobalFoundries Singapore Pte. Ltd.Inventors: Jae Gon Lee, Jingze Tian, Shyue Seng Tan, Luona Goh, Wei Lu, Elgin Quek
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Publication number: 20110316085Abstract: An integrated circuit is provided having a substrate and a transistor in an active region of the substrate. The substrate also has an isolation region having a dielectric material. In one embodiment, a pre-metal dielectric layer is disposed over the substrate and the transistor. At least one of the isolation region or the pre-metal dielectric layer includes a O3 TEOS oxide having a stress retaining dopant. The O3 TEOS oxide induces a stress in a channel region of the transistor.Type: ApplicationFiled: September 5, 2011Publication date: December 29, 2011Applicant: GLOBALFOUNDRIES SINGAPORE PTE. LTD.Inventors: Huang LIU, Jeff SHU, Luona GOH, Wei LU
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Patent number: 8013372Abstract: A method for fabricating an integrated circuit is provided. The method includes providing a substrate having an active region and an opening in the substrate adjacent to the active region. The opening is filled with a dielectric material so as to provide an isolation region in the substrate. A transistor is also formed in the active region and a pre-metal dielectric layer formed over the substrate and transistor. At least one of the dielectric layer in isolation region or the pre-metal dielectric layer includes a stressed O3 TEOS oxide having a stress retaining dopant, wherein the concentration of the stress retaining dopant is sufficient to retard stress degradation of the O3 TEOS oxide.Type: GrantFiled: April 4, 2008Date of Patent: September 6, 2011Assignee: Globalfoundries Singapore Pte. Ltd.Inventors: Huang Liu, Jeff Shu, Luona Goh, Wei Lu
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Publication number: 20090325359Abstract: An integrated circuit system that includes: providing a substrate; forming a trench within the substrate; forming a liner on a sidewall of the trench; and forming a dielectric material at a trench bottom with a dielectric width dimension that exceeds that of a width dimension of the trench.Type: ApplicationFiled: June 30, 2008Publication date: December 31, 2009Applicant: CHARTERED SEMICONDUCTOR MANUFACTURING LTD.Inventors: Huang Liu, Johnny Widodo, Jeff Shu, Luona Goh Loh Nah, Jack Cheng, Wei Lu, Jingze Tian, Xuesong Rao
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Publication number: 20090315121Abstract: An integrated circuit is provided having a substrate and a transistor in an active region of the substrate. The substrate also has an isolation region having a dielectric material. In one embodiment, a pre-metal dielectric (PMD) layer is disposed over the substrate and the transistor. At least one of the isolation region or the PMD layer includes O3-TEOS having a first stress. A cap layer is disposed over the O3-TEOS in the isolation region or the PMD layer. The cap layer prevents degradation of the first stress of the O3-TEOS.Type: ApplicationFiled: June 19, 2008Publication date: December 24, 2009Applicant: Chartered Semiconductor Manufacturing, Ltd.Inventors: Luona GOH, Jeff Jiehui SHU, Huang LIU, Wei LU
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Publication number: 20090302391Abstract: A stress liner having first and second stress type is provided over a first type and a second type transistor to improve reliability and performance without incurring area penalties or layout deficiencies.Type: ApplicationFiled: June 5, 2008Publication date: December 10, 2009Applicant: CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.Inventors: Jae Gon LEE, Jingze TIAN, Shyue Seng TAN, Luona GOH, Wei LU, Elgin QUEK
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Publication number: 20090289284Abstract: A method (and semiconductor device) of forming a high shrinkage stressed silicon nitride layer for use as a contact etch stop layer (CESL) or capping layer in a stress management technique (SMT) provides increased tensile stress to a channel of an nFET device to enhance carrier mobility. A spin-on polysilazane-based dielectric material is applied to a semiconductor substrate and baked to form a film layer. The film layer is cured to remove hydrogen from the film which causes shrinkage in the film when it recrystallizes into silicon nitride. The resulting silicon nitride stressed layer introduces an increased level of tensile stress to the transistor channel region.Type: ApplicationFiled: May 23, 2008Publication date: November 26, 2009Inventors: Luona Goh, Jingze Tian, Wei Lu, Mei Sheng Zhou
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Publication number: 20090250764Abstract: An integrated circuit is provided having a substrate and a transistor in an active region of the substrate. The substrate also has an isolation region having a dielectric material. In one embodiment, a pre-metal dielectric layer is disposed over the substrate and the transistor. At least one of the isolation region or the pre-metal dielectric layer includes a O3 TEOS oxide having a stress retaining dopant. The O3 TEOS oxide induces a stress in a channel region of the transistor.Type: ApplicationFiled: April 4, 2008Publication date: October 8, 2009Applicant: Chartered Semiconductor Manufacturing, Ltd.Inventors: Huang LIU, Jeff SHU, Luona GOH, Wei LU
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Patent number: 7332422Abstract: A method for cleaning a copper interconnect after a chemical-mechanical polishing that comprises: a) treating the surface of said copper interconnect with a nitrogen and oxygen containing treatment; and b) without breaking vacuum, treating the copper interconnect with a NH3 or H2 plasma treatment. Next a cap layer is formed over the copper interconnect.Type: GrantFiled: January 5, 2005Date of Patent: February 19, 2008Assignee: Chartered Semiconductor Manufacturing, Ltd.Inventors: Wei Lu, Loh Nah Luona Goh, Liang Choo Hsia
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Patent number: 7224060Abstract: A method of manufacturing an integrated circuit provides a substrate having a semiconductor device, and includes forming an intermetal dielectric layer over the substrate and the semiconductor device. A metal wire is formed above the semiconductor device and in contact therewith and a passivation layer is formed over the intermetal dielectric layer. A bond pad is formed connected to the metal wire. A protective moat, with sidewall passivation layer, is formed through the passivation layer and the intermetal dielectric layer, and is located between the metal wire and an outside edge of the integrated circuit.Type: GrantFiled: January 30, 2004Date of Patent: May 29, 2007Assignee: Chartered Semiconductor Manufacturing Ltd.Inventors: Fan Zhang, Kho Liep Chok, Tae Jong Lee, Xiaomei Bu, Meng Luo, Chian Yuh Sin, Yee Mei Foong, Luona Goh, Liang Choo Hsia, Huey Ming Chong
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Patent number: 7144828Abstract: A method of improving adhesion of low dielectric constant films to other dielectric films is described. A low dielectric constant material layer is deposited on a substrate. The low dielectric constant material layer is treated with helium plasma. An overlying layer is deposited on the low dielectric constant material layer wherein there is good adhesion between the low dielectric constant material layer and the overlying layer.Type: GrantFiled: January 30, 2004Date of Patent: December 5, 2006Assignee: Chartered Semiconductor Manufacturing Ltd.Inventors: Wei Lu, Luona Goh Loh Nah, John Sudijono
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Patent number: 7078333Abstract: Method of improving adhesion of low dielectric constant films to other dielectric films and barrier metals in a damascene process are achieved. In one method, a low dielectric constant material layer is deposited on a substrate. Silicon ions are implanted into the low dielectric constant material layer. Thereafter, a TEOS-based silicon oxide layer is deposited overlying the low dielectric constant material whereby there is good adhesion between low dielectric constant material layer and the TEOS-based silicon oxide layer. In another method, a low dielectric constant material layer is deposited on a substrate. A silicon-based dielectric layer is deposited overlying the low dielectric constant material wherein the silicon-based dielectric layer is not silicon oxide whereby there is good adhesion between the low dielectric constant material layer and the silicon-based dielectric layer.Type: GrantFiled: September 16, 2004Date of Patent: July 18, 2006Inventors: Luona Goh, Simon Chooi, Siew Lok Toh, Tong Earn Tay
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Publication number: 20050167824Abstract: A method of manufacturing an integrated circuit provides a substrate having a semiconductor device, and includes forming an intermetal dielectric layer over the substrate and the semiconductor device. A metal wire is formed above the semiconductor device and in contact therewith and a passivation layer is formed over the intermetal dielectric layer. A bond pad is formed connected to the metal wire. A protective moat, with sidewall passivation layer, is formed through the passivation layer and the intermetal dielectric layer, and is located between the metal wire and an outside edge of the integrated circuit.Type: ApplicationFiled: January 30, 2004Publication date: August 4, 2005Applicant: CHARTERED SEMICONDUCTOR MANUFACTURING LTD.Inventors: Fan Zhang, Kho Chok, Tae Lee, Xiaomei Bu, Meng Luo, Chian Sin, Yee Foong, Luona Goh, Liang Hsia, Huey Chong
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Publication number: 20050032392Abstract: Method of improving adhesion of low dielectric constant films to other dielectric films and barrier metals in a damascene process are achieved. In one method, a low dielectric constant material layer is deposited on a substrate. Silicon ions are implanted into the low dielectric constant material layer. Thereafter, a TEOS-based silicon oxide layer is deposited overlying the low dielectric constant material whereby there is good adhesion between low dielectric constant material layer and the TEOS-based silicon oxide layer. In another method, a low dielectric constant material layer is deposited on a substrate. A silicon-based dielectric layer is deposited overlying the low dielectric constant material wherein the silicon-based dielectric layer is not silicon oxide whereby there is good adhesion between the low dielectric constant material layer and the silicon-based dielectric layer.Type: ApplicationFiled: September 16, 2004Publication date: February 10, 2005Inventors: Luona Goh, Simon Chooi, Siew Toh, Tong Tay
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Patent number: 6797605Abstract: Method of improving adhesion of low dielectric constant films to other dielectric films and barrier metals in a damascene process are achieved. In one method, a low dielectric constant material layer is deposited on a substrate. Silicon ions are implanted into the low dielectric constant material layer. Thereafter, a TEOS-based silicon oxide layer is deposited overlying the low dielectric constant material whereby there is good adhesion between low dielectric constant material layer and the TEOS-based silicon oxide layer. In another method, a low dielectric constant material layer is deposited on a substrate. A silicon-based dielectric layer is deposited overlying the low dielectric constant material wherein the silicon-based dielectric layer is not silicon oxide whereby there is good adhesion between the low dielectric constant material layer and the silicon-based dielectric layer.Type: GrantFiled: July 26, 2001Date of Patent: September 28, 2004Assignee: Chartered Semiconductor Manufacturing Ltd.Inventors: Luona Goh, Simon Chooi, Siew Lok Toh, Tong Earn Tay
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Patent number: 6513374Abstract: A new apparatus is provided for the quantification of the adhesion of a film over a substrate. In particular, the peeling force and the rate of peeling are quantified by providing a first means for measuring the peeling force, a second means for measuring the rate of peeling, a third means for securing a piece of wafer, an adhesive tape, a tape holder and a resilient, flexible component.Type: GrantFiled: January 29, 2001Date of Patent: February 4, 2003Assignee: Chartered Semiconductor Manufacturing Ltd.Inventors: Loh-Nah Luona Goh, Siew-Lok Toh, Simon Chooi, Tong-Earn Tay
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Publication number: 20030022472Abstract: Method of improving adhesion of low dielectric constant films to other dielectric films and barrier metals in a damascene process are achieved. In one method, a low dielectric constant material layer is deposited on a substrate. Silicon ions are implanted into the low dielectric constant material layer. Thereafter, a TEOS-based silicon oxide layer is deposited overlying the low dielectric constant material whereby there is good adhesion between low dielectric constant material layer and the TEOS-based silicon oxide layer. In another method, a low dielectric constant material layer is deposited on a substrate. A silicon-based dielectric layer is deposited overlying the low dielectric constant material wherein the silicon-based dielectric layer is not silicon oxide whereby there is good adhesion between the low dielectric constant material layer and the silicon-based dielectric layer.Type: ApplicationFiled: July 26, 2001Publication date: January 30, 2003Applicant: Chartered Semiconductor Manufacturing Ltd.Inventors: Luona Goh, Simon Chooi, Siew Lok Toh, Tong Earn Tay
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Publication number: 20020100334Abstract: A new apparatus is provided for the quantification of the adhesion of a film over a substrate. In particular, the peeling force and the rate of peeling are quantified by providing a first means for measuring the peeling force, a second means for measuring the rate of peeling, a third means for securing a piece of wafer, an adhesive tape, a tape holder and a resilient, flexible component.Type: ApplicationFiled: January 29, 2001Publication date: August 1, 2002Inventors: Loh-Nah Luona Goh, Siew-Lok Toh, Simon Chooi, Tong-Earn Tay