Abstract: An apparatus for forming laser radiation. The apparatus can form the laser radiation such that the laser radiation can enter an optical fiber. The apparatus contains a first lens device for deflection and/or imaging or collimation of the laser radiation with respect to a first direction, and a second lens device for deflection and/or imaging or collimation of the laser radiation with respect to a second direction. The first and the second lens devices are provided in or on a component.

Abstract: A device for beam forming includes at least two laser light sources capable of emitting laser radiation and an optical device capable of influencing the laser radiation such that the laser radiation has an intensity distribution in a working plane that at least partially corresponds to a top-hat distribution at least with regard to one direction. The laser beam may be at least partially overlapped by the optical device. The laser beam is a single-mode laser beam at least with regard to a direction perpendicular to the distribution direction.

Abstract: A device for beam forming includes at least two laser light sources capable of emitting laser radiation and an optical device capable of influencing the laser radiation such that the laser radiation has an intensity distribution in a working plane that at least partially corresponds to a top-hat distribution at least with regard to one direction. The laser beam may be at least partially overlapped by the optical device. The laser beam is a single-mode laser beam at least with regard to a direction perpendicular to the distribution direction.

Abstract: An apparatus for forming laser radiation. The apparatus can form the laser radiation such that the laser radiation can enter an optical fiber. The apparatus contains a first lens device for deflection and/or imaging or collimation of the laser radiation with respect to a first direction, and a second lens device for deflection and/or imaging or collimation of the laser radiation with respect to a second direction. The first and the second lens devices are provided in or on a component.

Abstract: This invention relates to a mask blank for use in EUV lithography and a method for its production. The mask blank comprises a substrate with a front side and a rear side whereby a coating is applied to the front side for use as a mask in EUV lithography and the rear side of the substrate comprises an electrically conductive coating. The electrically conductive coating is particularly abrasion resistant and strongly adhesive according to DIN 58196-5 (German Industry Standard), DIN 58196-4 and DIN 58196-6 and characterised by a minimum electrical conductivity. The electrically conductive coating is applied by means of ion-beam-assisted sputtering. Since the electrically conductive coating on the rear side is so abrasion resistant and strongly adhesive, the mask blank may be gripped, held and handled by means of an electrostatic holding device (chuck) without any troublesome abrasion occurring.

Abstract: The invention relates to the manufacture of a substrate which is particularly suitable for EUV micro-lithography and comprises a base layer of low coefficient of thermal expansion (CTE) onto which at least one cover layer made of a semiconductor material is applied. Preferably, the cover layer is a silicon layer, preferably applied by ion beam sputtering. By an additional ion beam figuring treatment substrates of extremely accurate shape and extremely low roughness can be prepared.

Abstract: The present invention relates to a substrate in particular of EUV microlithography, to the production of a substrate of this type and to the use of this substrate as a substrate for mirrors and/or masks or mask blanks in particular in EUV microlithography.

Abstract: The invention relates to a method of producing a mask blank (1) for photolithographic applications, particularly in EUV lithography, comprising the steps of: providing a substrate (2) which has a front side (4) and a rear side (3); depositing an electrically conductive layer (5) on the rear side of the substrate; depositing a coating on the front side of the substrate, wherein the coating comprises at least a first layer (6) and a second layer (9); and structuring the coating (6, 9) for photolithographic applications; wherein a respective handling area (22; 22a-22c) is formed on the front side (4) at least at one predefined location, said handling area not being structured for photolithographic applications and being designed for the handling of the mask blank (1) by means of a mechanical clamp or handling device, and wherein the first layer (6) is exposed in the respective handling area (22; 22a-22c) so that, when the mask blank (1) is handled from the front side, the mechanical clamp or handling devi

Abstract: The invention relates to a method for manufacturing of a mask blank for extreme ultraviolet (EUV) photolithography, comprising the steps of: providing a substrate having a front surface and a back surface; depositing a film comprising tantalum nitride (TaN) on said front surface of said substrate for absorbing EUV light used during a photolithographic process; and depositing a conductive coating on said back surface of said substrate. Preferably, ion beam sputtering is used for depositing the film comprising tantalum nitride (TaN) and/or the conductive coating on the back surface of the substrate. Preferably, Xenon is used as a sputter gas for ion beam sputtering. Another aspect of the present invention relates to a mask blank for extreme ultraviolet (EUV) photolithography.

Abstract: In a reflectometer arrangement and a method for determining the reflectance of selected measurement locations on measurement objects reflecting in a spectrally dependent manner, the object of the invention is to reduce the time for measuring a measurement object with a robust and simple measurement structure to such an extent that compact radiation sources with low output compared to a synchrotron can be used at the site of production or of use of the measurement object to characterize the object characteristics in a manner suited to series production. A measurement beam bundle proceeding from a polychromatically emitting radiation source is directed onto the measurement location of the measurement object sequentially in modified manner by impressing spectral reference reflection characteristics and the radiation reflected from every measurement location is detected integrally.

Abstract: The invention relates to a photo mask blank, a photo mask, a method and an apparatus for manufacturing a photo mask blank in general, and for manufacturing a photo mask blank by particle beam sputtering in particular. It is an object of the invention to provide a method of manufacturing a photo mask blank of high quality and high stability that is suitable for the production of a photo mask having small structures. The invention proposes a method for manufacturing a photo mask blank, wherein a substrate and a target are provided in a vacuum chamber. The target is sputtered by irradiating with a first particle or ion beam and at least a first layer of a first material is deposited on the substrate by the sputtering of said target.

Abstract: This invention relates to a mask blank for use in EUV lithography and a method for its production.

Abstract: The invention relates to the manufacture of a substrate which is particularly suitable for EUV micro-lithography and comprises a base layer of low coefficient of thermal expansion (CTE) onto which at least one cover layer made of a semiconductor material is applied. Preferably, the cover layer is a silicon layer, preferably applied by ion beam sputtering. By an additional ion beam figuring treatment substrates of extremely accurate shape and extremely low roughness can be prepared.

Abstract: The present invention relates to a substrate in particular of EUV microlithography, to the production of a substrate of this type and to the use of this substrate as a substrate for mirrors and/or masks or mask blanks in particular in EUV microlithography.

Abstract: In a reflectometer arrangement and a method for determining the reflectance of selected measurement locations on measurement objects reflecting in a spectrally dependent manner, the object of the invention is to reduce the time for measuring a measurement object with a robust and simple measurement structure to such an extent that compact radiation sources with low output compared to a synchrotron can be used at the site of production or of use of the measurement object to characterize the object characteristics in a manner suited to series production. A measurement beam bundle proceeding from a polychromatically emitting radiation source is directed onto the measurement location of the measurement object sequentially in modified manner by impressing spectral reference reflection characteristics and the radiation reflected from every measurement location is detected integrally.