Abstract: A laser decal transfer is used to generate thin film features by directing laser pulses of very low energy at the back of a target substrate illuminating an area of a thin layer of a high viscosity rheological fluid coating the front surface of the target. The illuminated area is shaped and defined by an aperture centered about the laser beam. The decal transfer process allows for the release and transfer from the target substrate to the receiving substrate a uniform and continuous layer identical in shape and size of the laser irradiated area. The released layer is transferred across the gap with almost no changes to its initial size and shape. The resulting patterns transferred onto the receiving substrate are highly uniform in thickness and morphology, have sharp edge features and exhibit high adhesion, independent of the surface energy, wetting or phobicity of the receiving substrate.

Abstract: An apparatus includes integrated review, material removal and material deposition functions. The apparatus performs the review, material removal and material deposition operations along the same optical axis. The apparatus includes, in part, a camera, a pair of lenses, and one or more lasers. A first lens is used to focus the camera along the optical axis on a structure formed on the target substrate undergoing review. The first lens is also used to focus the laser beam on the structure to remove a material present thereon if the reviewed structure is identified as requiring material removal. The second lens is used to focus the laser beam on a ribbon to transfer a rheological compound from a recessed well formed in the ribbon to the structure if the reviewed structure is identified as requiring material deposition.

Abstract: A laser decal transfer is used to generate thin film features by directing laser pulses of very low energy at the back of a target substrate illuminating an area of a thin layer of a high viscosity rheological fluid coating the front surface of the target. The illuminated area is shaped and defined by an aperture centered about the laser beam. The decal transfer process allows for the release and transfer from the target substrate to the receiving substrate a uniform and continuous layer identical in shape and size of the laser irradiated area. The released layer is transferred across the gap with almost no changes to its initial size and shape. The resulting patterns transferred onto the receiving substrate are highly uniform in thickness and morphology, have sharp edge features and exhibit high adhesion, independent of the surface energy, wetting or phobicity of the receiving substrate.

Abstract: An apparatus includes integrated review, material removal and material deposition functions. The apparatus performs the review, material removal and material deposition operations along the same optical axis. The apparatus includes, in part, a camera, a pair of lenses, and one or more lasers. A first lens is used to focus the camera along the optical axis on a structure formed on the target substrate undergoing review. The first lens is also used to focus the laser beam on the structure to remove a material present thereon if the reviewed structure is identified as requiring material removal.

Abstract: A plasma generating source for processing semiconductor integrated circuits is provided. The plasma generating source is configured to control the amount of electromagnetic energy and the distribution of the electric and magnet energies coupled to the plasma. The plasma generating source comprises a plasma containing region and a source of electromagnetic energy for generating a plasma. An electrostatic shield is disposed between the source of electromagnetic energy and the plasma containing region. The electrostatic shield has a plurality of openings therethrough configured to control the amount and distribution of electromagnetic energy coupled from the source into the plasma containing region. The openings may be configured in a variety of ways to control the magnitude and distribution of electromagnetic energy coupled to the plasma.

Abstract: A system for injecting a gaseous substance into a semiconductor processing chamber. The injection system includes at least one plenum formed in a plenum body and a plurality of nozzles associated with each plenum for injecting gaseous substances from the plenums into the chamber. A conduit structure transports gaseous substances along an indirect path from the plenum to the nozzles. The nozzles are positioned and configured to provide a uniform distribution of gaseous substances across the wafer surface.

Abstract: A conical shaped baffle aperture reduces beam position drift due to electrostatic charging of insulating contamination layers on beam tube walls of a charged particle beam system. The geometric cone angle, aperture size and apex location of the baffle with respect to the source of contamination and secondary radiation are selected so that the inner walls of the baffle and the beam itself are invisible from the source, and therefore remain free of the insulating contamination layers that would otherwise cause charging drift.

Abstract: A thermally stable magnetic deflection assembly for use in an electron or particle beam machine with several separately potted magnetic coils spaced apart and arranged in a particular vertical position on a central pipe. Non metallic, low coefficient of thermal expansion, highly thermally conductive materials are used throughout and means are provided for maintaining the entire assembly at a desired temperature. Also disclosed is a method of making a thermally stable magnetic deflection assembly.

Abstract: A thermally stable magnetic deflection assembly for use in an electron or particle beam machine with several separately potted magnetic coils spaced apart and arranged in a particular vertical position on a central pipe. Non metallic, low coefficient of thermal expansion, highly thermally conductive materials are used throughout and means are provided for maintaining the entire assembly at a desired temperature. Also disclosed is a method of making a thermally stable magnetic deflection assembly.

Abstract: A method for forming an electrostatic field deflector tube (50) for use in an electron beam machine (10) which comprises the use of a rigid boring bar (88) with a diamond scribe tip (90) and a rigid holder (92) for the metal coated tube. The scribe tip (90) is positioned within the bore of the tube and the boring bar (88) is stroked in a direction parallel to the tube axis while engagement with the inner coating to scribe very narrow lines (66) on the inner surface of the tube. These lines (66) are formed over a major portion of the length of the tube and of a width less than 0.001 in. After each scribing step, the tube (or the boring bar and scribe tip as the case may be) is incrementally rotated to form a number of separate electrically isolated areas. Dial position indicators with digital readouts (92) locate the scribe tip (90) within a few ten thousandths of an inch and optical and resiatance means are used to determine the integrity of each scribed line.

Abstract: A non-contact method of cleaning a surface comprising forming a thin gas film (10) of high velocity gas between a surface (14) to be cleaned and a cleaning device (16). The gas film (10), being also a gas bearing, supports the cleaning device (16) and thus forms a self-regulating gap (G) between the surface (14) and the cleaning device (16) so that the cleaning device (16) never contacts the surface (14). The cleaning device (16) comprises a plurality of bores (22) for directing gas onto the surface (14) and an opening (24) for vacuum. In the preferred embodiment, the bores (22) are arranged in a circle and the opening (24) is located centrally of the circle. The thickness of the gas film (10) is determined by the pressure of the incoming gas and vacuum. The creation of turbulence and eddy currents and the use of an ionized gas are enhancements to the cleaning ability of the gas film (10). The method includes moving the cleaning device (16) relative to the surface (14) and vice versa.

Abstract: A reference and calibration grid (44a or 44b) of silicon is incorporated into a particle beam lithography system (10) and used to calibrate the system (10). The grid (44a or 44b) is formed in a silicon die (50) of much thicker structure and with square holes (64) and with a period to enable direct coordination with binary electronics. The grid (44a or 44b) is coated with a suitable material, preferably gold (72), to prevent charged particles or electrons from passing through the solid portions of the grid and the grid is preferably mounted on a grid holder (52) which can be aligned to the X-Y reference on the workpiece stage (32) and may be adjusted in tilt and in height (Z direction). The crystallography of silicon provides accuracies in orthogonality, corner radii, and edge roughness required for grids used as fiducials for particle beam lithography.

Abstract: Disclosed is a guard ring (20) in a particle beam lithography system (10) of a pressurized gas surrounding a seal apparatus (14) and concentric therewith so that the guard ring (20) of gas is located between the seal apparatus (14) and ambient pressure in which the remainder of the workpiece (12) is located and forms a curtain of gas surrounding the seal apparatus (14) to reduce contamination of the seal apparatus (14) and beam column (16). In one embodiment, the guard ring (20) is formed by a ring of small ports (60) connected to a source of pressurized gas so that gas at a pressure higher than the ambient pressure is directed toward the workpiece (12). In a second embodiment, the guard ring (20) is formed by a small width groove (72) connected by gas ports (60) to a source of pressurized gas (64) by which gas is introduced into the groove (72).

Abstract: Disclosed is a particle beam lithography system (10) having a workpiece loading/unloading position to one side of a particle beam (32) and beam column (12) where a workpiece (14), to be processed, is placed in a vacuum chuck (100) to eliminate any irregularity or warpage of the workpiece (14). At this same position, the workpiece (14) is oriented and fixed at a preselected distance from a standard by gap setting means (162, 162b). This distance correlates with a preselected gap (G) between a seal apparatus (16) and the workpiece (14) during workpiece processing. The workpiece (14) and chuck (100) are then moved beneath the seal apparatus (16) and beam column (12) for workpiece processing. After processing, the workpiece (14) and chuck (100) are returned to the loading/unloading position to be removed from the lithography system (10).

Abstract: A differentially pumped seal apparatus (14) comprising a rough port nozzle (R), a medium port nozzle (M) and a high port nozzle (H), each with a centrally located sleeve (34,36,40) defining concentric apertures (44,48,52). Each nozzle is configured as a sector of a circular cylinder which provides for large channels (62, 72, 76) to be formed for connecting the sleeve apertures (44,48,52) of each nozzle directly to vacuum pumps (46,50,54) to thereby provide a graded seal with high conductance and increased pumping efficiencies, higher vacuum and a smaller gap between the sleeve (34,36,40) and a workpiece (12).