Abstract: The invention relates to a process for forming a structure comprising providing a support, coating one side of said support with a colored mask, coating a layer photopatternable by visible light, and exposing the layer through the colored mask with visible light to photopattern the layer.

Abstract: A process for forming a pixel circuit is disclosed comprising: (a) providing a transparent support; (b) forming a multicolor mask having at least four different color patterns; (c) forming integrated electronic components of the pixel circuit having at least four layers of patterned functional material comprising a first conductor, a dielectric, a semiconductor, and a second conductor each layer of patterned functional material corresponding to the four different color patterns of the multicolor mask. The functional material is patterned using a photopattern corresponding to each color pattern.

Abstract: The invention relates to a process for forming a structure comprising providing a support, coating one side of said support with a colored mask, coating a layer photopatternable by visible light, and exposing the layer through the colored mask with visible light to photopattern the layer.

Abstract: A process for forming a pixel circuit is disclosed comprising: (a) providing a transparent support; (b) forming a multicolor mask having at least four different color patterns; (c) forming integrated electronic components of the pixel circuit having at least four layers of patterned functional material comprising a first conductor, a dielectric, a semiconductor, and a second conductor each layer of patterned functional material corresponding to the four different color patterns of the multicolor mask. The functional material is patterned using a photopattern corresponding to each color pattern.

Abstract: The invention relates to a process for forming a structure comprising providing a support, coating one side of said support with a colored mask, coating a layer photopatternable by visible light, and exposing the layer through the colored mask with visible light to photopattern the layer.

Abstract: The invention relates to a process for forming a structure comprising: (a) providing a transparent support; (b) forming a color mask having a selected absorption spectral range wherein the color mask has an effectively transparent portion and a partially absorptive portion, wherein the partially absorptive portion includes at least two portions having different optical densities within the absorption spectral range; (c) coating a layer of a photopatternable material sensitive to visible light in the absorption spectral range; (d) exposing and developing the photopatternable material to form a photopattern corresponding to at least one of said two portions of the partially absorptive portion; and (e) depositing and patterning a layer of functional material such that a pattern of functional material results corresponding to the at least one of said two portions of the partially absorptive portion.

Abstract: A process for forming a pixel circuit is disclosed comprising: (a) providing a transparent support; (b) forming a multicolor mask having at least four different color patterns; (c) forming integrated electronic components of the pixel circuit having at least four layers of patterned functional material comprising a first conductor, a dielectric, a semiconductor, and a second conductor each layer of patterned functional material corresponding to the four different color patterns of the multicolor mask. The functional material is patterned using a photopattern corresponding to each color pattern.

Abstract: The invention relates to a process for forming a structure comprising (a) providing a transparent support; (b) forming a color mask on a first side of the transparent support; (c) applying a first layer comprising a deposition inhibitor material that is sensitive to visible light; (d) patterning the first layer by exposing the first layer through the color mask with visible light to form a first pattern and developing the deposition inhibitor material to provide selected areas of the first layer effectively not having the deposition inhibitor material; and (e) depositing a second layer of functional material over the transparent support; wherein the second layer of functional material is substantially deposited only in selected areas over the transparent support not having the deposition inhibitor material.

Abstract: An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or polymer; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. An inorganic thin film material is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Abstract: An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organosiloxane compound; and patterning the deposition inhibitor material either after or simultaneously with or introducing applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Abstract: The present invention relates to a process of making thin film electronic components and devices, such as thin film transistors, environmental barrier layers, capacitors, insulators and bus lines, where most or all of the layers are made by an atmospheric atomic layer deposition process.

Abstract: An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a photopatternable deposition inhibitor material to the substrate, wherein the deposition inhibitor material comprises an organosiloxane compound; and patterning the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Abstract: A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, wherein the substrate temperature is no more than 300° C. during fabrication.

Abstract: A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, wherein the substrate temperature is no more than 300° C. during fabrication.

Abstract: A process for forming a pixel circuit is disclosed comprising: (a) providing a transparent support; (b) forming a multicolor mask having at least four different color patterns; (c) forming integrated electronic components of the pixel circuit having at least four layers of patterned functional material comprising a first conductor, a dielectric, a semiconductor, and a second conductor each layer of patterned functional material corresponding to the four different color patterns of the multicolor mask. The functional material is patterned using a photopattern corresponding to each color pattern.

Abstract: An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a photopatternable deposition inhibitor material to the substrate, wherein the deposition inhibitor material comprises an organosiloxane compound; and patterning the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Abstract: The invention relates to a process for forming a structure comprising (a) providing a transparent support; (b) forming a color mask on a first side of the transparent support; (c) applying a first layer comprising a deposition inhibitor material that is sensitive to visible light; (d) patterning the first layer by exposing the first layer through the color mask with visible light to form a first pattern and developing the deposition inhibitor material to provide selected areas of the first layer effectively not having the deposition inhibitor material; and (e) depositing a second layer of functional material over the transparent support; wherein the second layer of functional material is substantially deposited only in selected areas over the transparent support not having the deposition inhibitor material.

Abstract: The invention relates to a process for forming a stacked transparent structure comprising providing a support, coating one side of said support with a multicolored mask, coating the other side of the support with a layer curable by visible light, and exposing the light-curable layer through the mask with visible light to cure the layer curable by light in exposed portions to form a cured pattern.

Abstract: The invention relates to a process for forming a structure comprising providing a support, coating one side of said support with a colored mask, coating a layer photopatternable by visible light, and exposing the layer through the colored mask with visible light to photopattern the layer.

Abstract: The invention relates to a process for forming a structure comprising: (a) providing a transparent support; (b) forming a color mask having a selected absorption spectral range wherein the color mask has an effectively transparent portion and a partially absorptive portion, wherein the partially absorptive portion includes at least two portions having different optical densities within the absorption spectral range; (c) coating a layer of a photopatternable material sensitive to visible light in the absorption spectral range; (d) exposing and developing the photopatternable material to form a photopattern corresponding to at least one of said two portions of the partially absorptive portion; and (e) depositing and patterning a layer of functional material such that a pattern of functional material results corresponding to the at least one of said two portions of the partially absorptive portion.