Abstract: A high efficiency grating coupler design includes a grating region formed of a first material on an optics substrate. A side reflector formed of the first material is disposed on the optics substrate adjacent the grating region. A high contrast overlay is on the grating region, but is not disposed on the side reflector. The grating region includes teeth formed of the first material and the high contrast overlay, wherein the teeth have independently apodized fill factor, etch depth, and heights The first material and a material of the high contrast overlay can be selected to correspond to a particular laser type, wavelength of the laser, properties of the laser beam, and material of the laser. In addition, the teeth of the grating region, along with the side reflector teeth, can be apodized for optimized optical coupling efficiency with respect to the laser.

Abstract: An apparatus such as an optical modulator includes a buried oxide layer is disposed on a substrate. A microring resonator and an optical waveguide are disposed on the buried oxide layer and within a bonded semiconductor layer. The optical waveguide is optically coupled to the microring resonator and inputs a first optical wave into the microring resonator. An oxide layer is deposited on top of the optical waveguide and the microring resonator. A set of electrodes is disposed adjacent to the microring resonator, and in response to an electrical signal, the set of electrodes modulates the first optical wave into a modulated optical wave of transverse magnetic polarization within the microring resonator and outputs the modulated optical wave to the optical waveguide.

Abstract: A device includes an optic in an at least partially rigid scaffold. The scaffold is permeated, at least temporarily during a writing process, by writable media. The optic may be written into a writable volume in the scaffold defined by the writable media. The optic may be written by exposing the writable media to incident light to cause a material property change in the writable media within the writable volume.

Abstract: An apparatus such as an optical modulator includes a buried oxide layer is disposed on a substrate. A microring resonator and an optical waveguide are disposed on the buried oxide layer and within a bonded semiconductor layer. The optical waveguide is optically coupled to the microring resonator and inputs a first optical wave into the microring resonator. An oxide layer is deposited on top of the optical waveguide and the microring resonator. A set of electrodes is disposed adjacent to the microring resonator, and in response to an electrical signal, the set of electrodes modulates the first optical wave into a modulated optical wave of transverse magnetic polarization within the microring resonator and outputs the modulated optical wave to the optical waveguide.

Abstract: Objects and/or grouped emitters are anti-symmetrically excited. The anti-symmetric radiation emitted by the objects generate an interference pattern with a node in the spacing between the objects. The spacing may be sub-wavelength and/or below a resolution limit for the emitted radiation. Samples within the spacing may be detected via distortion to the inference pattern and visualized (including sub-resolution limit features) either directly or through reconstruction analysis from the interference pattern.

Abstract: Provided are plasmon resonance imaging devices having metal-insulator-metal nanocups and methods of use thereof.

Abstract: A device includes an optic in an at least partially rigid scaffold. The scaffold is permeated, at least temporarily during a writing process, by writable media. The optic may be written into a writable volume in the scaffold defined by the writable media. The optic may be written by exposing the writable media to incident light to cause a material property change in the writable media within the writable volume.

Abstract: Provided are plasmon resonance imaging devices having metal-insulator-metal nanocups and methods of use thereof.

Abstract: Methods for obtaining a tomographic phase image of a specimen, either in transmission or in scatter. A specimen is illuminated by a temporally incoherent source and light collected in transmission or scattering is used to generate a scattered phase image of the specimen in multiple axial planes. The scattered field is solved for in wavevector space, and a derived instrument function is deconvolved to obtain specimen susceptibility in wavevector space. The specimen susceptibility is transformed to obtain a three-dimensional phase tomogram of the specimen.

Abstract: Methods for obtaining a tomographic phase image of a specimen, either in transmission or in scatter. A specimen is illuminated by a temporally incoherent source and light collected in transmission or scattering is used to generate a scattered phase image of the specimen in multiple axial planes. The scattered field is solved for in wavevector space, and a derived instrument function is deconvolved to obtain specimen susceptibility in wavevector space. The specimen susceptibility is transformed to obtain a three-dimensional phase tomogram of the specimen.

Abstract: A component having a microring resonator and grating, coupled to a waveguide is described. By selection of the grating period, and other parameters such as the grating-waveguide coupling coefficient, an efficient filter may be designed and constructed. The component may be used in passive devices such as add-drop multiplexers or sensors, or in active devices such as lasers. Designs having essentially no response sidelobes, very narrow effective bandwidths, and fast filter roll-offs may permit compact devices to be produced, when compared with typical distributed sampled Bragg grating structures.

Abstract: A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

Abstract: A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl4 gas into the chamber, flowing Ar gas into the chamber, and flowing H2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Abstract: A component having a microring resonator and grating, coupled to a waveguide is described. By selection of the grating period, and other parameters such as the grating-waveguide coupling coefficient, an efficient filter may be designed and constructed. The component may be used in passive devices such as add-drop multiplexers or sensors, or in active devices such as lasers. Designs having essentially no response sidelobes, very narrow effective bandwidths, and fast filter roll-offs may permit compact devices to be produced, when compared with typical distributed sampled Bragg grating structures.

Abstract: A new reconfigurable cascadable all-optical on-chip device is presented. The gate operates by combining the Vernier effect with a novel effect, the gain-index lever, to help shift the dominant lasing mode from a mode where the laser light is output at one facet to a mode where it is output at the other facet. Since the laser remains above threshold, the speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal optical modulation speed of the laser, which can be on the order of up to about tens of GHz. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog optical or electrical signal at the gate selection port. Other all-optical functionality includes wavelength conversion, signal duplication, threshold switching, analog to digital conversion, digital to analog conversion, signal routing, and environment sensing.

Abstract: A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

Abstract: A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl4 gas into the chamber, flowing Ar gas into the chamber, and flowing H2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Abstract: A new reconfigurable cascadable all-optical on-chip device is presented. The gate operates by combining the Vernier effect with a novel effect, the gain-index lever, to help shift the dominant lasing mode from a mode where the laser light is output at one facet to a mode where it is output at the other facet. Since the laser remains above threshold, the speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal optical modulation speed of the laser, which can be on the order of up to about tens of GHz. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog optical or electrical signal at the gate selection port. Other all-optical functionality includes wavelength conversion, signal duplication, threshold switching, analog to digital conversion, digital to analog conversion, signal routing, and environment sensing.