Patents by Inventor M. Arif Zeeshan
M. Arif Zeeshan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11956978Abstract: In one embodiment, a method of selectively forming a deposit may include providing a substrate, the substrate having a plurality of surface features, extending at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. The method may include directing a reactive beam to the plurality of surface features, the reactive beam defining a non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein a seed layer is deposited on a first portion of the surface features, and is not deposited on a second portion of the surface features. The method may further include exposing the substrate to a reactive deposition process after the directing the reactive ion beam, wherein a deposit layer selectively grows over the seed layer.Type: GrantFiled: September 3, 2020Date of Patent: April 9, 2024Assignee: Applied Materials, Inc.Inventors: M. Arif Zeeshan, Kelvin Chan, Shantanu Kallakuri, Sony Varghese
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Publication number: 20240040808Abstract: In one embodiment, a method of selectively forming a deposit may include providing a substrate, the substrate having a plurality of surface features, extending at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. The method may include directing a reactive beam to the plurality of surface features, the reactive beam defining a non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein a seed layer is deposited on a first portion of the surface features, and is not deposited on a second portion of the surface features. The method may further include exposing the substrate to a reactive deposition process after the directing the reactive ion beam, wherein a deposit layer selectively grows over the seed layer.Type: ApplicationFiled: October 13, 2023Publication date: February 1, 2024Applicant: Applied Materials, Inc.Inventors: M. Arif Zeeshan, Kelvin Chan, Shantanu Kallakuri, Sony Varghese
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Publication number: 20230369112Abstract: Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component) obtained using directional etching to remove predetermined portions of a seed layer covering the substrate. In several embodiments, directional etching followed by selective deposition can enable fill material (e.g., metal) patterning in tight spaces without any voids or seams. Void-free material depositions may be used in a variety of semiconductor devices, such as transistors, dual work function stacks, dynamic random-access memory (DRAM), non-volatile memory, and the like.Type: ApplicationFiled: July 21, 2023Publication date: November 16, 2023Applicant: Applied Materials, Inc.Inventors: M. Arif Zeeshan, Kelvin Chan, Shantanu Kallakuri, Sony Varghese, John Hautala
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Patent number: 11749564Abstract: Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component) obtained using directional etching to remove predetermined portions of a seed layer covering the substrate. In several embodiments, directional etching followed by selective deposition can enable fill material (e.g., metal) patterning in tight spaces without any voids or seams. Void-free material depositions may be used in a variety of semiconductor devices, such as transistors, dual work function stacks, dynamic random-access memory (DRAM), non-volatile memory, and the like.Type: GrantFiled: September 22, 2020Date of Patent: September 5, 2023Assignee: Applied Materials, Inc.Inventors: M. Arif Zeeshan, Kelvin Chan, Shantanu Kallakuri, Sony Varghese, John Hautala
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Publication number: 20220404115Abstract: Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component). In some embodiments, a method may include providing a plurality of device structures extending from a base, each of the plurality of device structures including a first sidewall opposite a second sidewall and a top surface extending between the first and second sidewalls, and providing a seed layer over the plurality of device structures. The method may further include forming a dielectric layer along just the top surface and along an upper portion of the first and second sidewalls using an angled deposition delivered to the plurality of device structures at a non-zero angle of inclination relative to a perpendicular extending from an upper surface of the base, and forming a fill material within one or more trenches defined by the plurality of device structures.Type: ApplicationFiled: August 23, 2022Publication date: December 22, 2022Applicant: Applied Materials, Inc.Inventors: M. Arif Zeeshan, Tristan Y. Ma, Kelvin Chan
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Patent number: 11459652Abstract: Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component). In some embodiments, a method may include providing a plurality of device structures extending from a base, each of the plurality of device structures including a first sidewall opposite a second sidewall and a top surface extending between the first and second sidewalls, and providing a seed layer over the plurality of device structures. The method may further include forming a dielectric layer along just the top surface and along an upper portion of the first and second sidewalls using an angled deposition delivered to the plurality of device structures at a non-zero angle of inclination relative to a perpendicular extending from an upper surface of the base, and forming a fill material within one or more trenches defined by the plurality of device structures.Type: GrantFiled: October 16, 2020Date of Patent: October 4, 2022Assignee: Applied Materials, Inc.Inventors: M. Arif Zeeshan, Tristan Y. Ma, Kelvin Chan
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Patent number: 11404314Abstract: Disclosed are approaches for forming a semiconductor device. In some embodiments, a method may include a method may include providing a semiconductor device including plurality of patterning structures over a device stack, each of the plurality of patterning structures including a first sidewall, a second sidewall, and an upper surface. The method may further include forming a seed layer along just the first sidewall and the upper surface of each of the plurality of patterning structures, forming a metal layer atop the seed layer, forming a fill material between each of the plurality of patterning structures, and removing the plurality of patterning structures.Type: GrantFiled: October 16, 2020Date of Patent: August 2, 2022Assignee: Applied Materials, Inc.Inventors: Sony Varghese, M. Arif Zeeshan, Shantanu Kallakuri, Kelvin Chan
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Publication number: 20220119938Abstract: Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component). In some embodiments, a method may include providing a plurality of device structures extending from a base, each of the plurality of device structures including a first sidewall opposite a second sidewall and a top surface extending between the first and second sidewalls, and providing a seed layer over the plurality of device structures. The method may further include forming a dielectric layer along just the top surface and along an upper portion of the first and second sidewalls using an angled deposition delivered to the plurality of device structures at a non-zero angle of inclination relative to a perpendicular extending from an upper surface of the base, and forming a fill material within one or more trenches defined by the plurality of device structures.Type: ApplicationFiled: October 16, 2020Publication date: April 21, 2022Applicant: Applied Materials, Inc.Inventors: M. Arif Zeeshan, Tristan Y. Ma, Kelvin Chan
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Publication number: 20220122883Abstract: Disclosed are approaches for forming a semiconductor device. In some embodiments, a method may include a method may include providing a semiconductor device including plurality of patterning structures over a device stack, each of the plurality of patterning structures including a first sidewall, a second sidewall, and an upper surface. The method may further include forming a seed layer along just the first sidewall and the upper surface of each of the plurality of patterning structures, forming a metal layer atop the seed layer, forming a fill material between each of the plurality of patterning structures, and removing the plurality of patterning structures.Type: ApplicationFiled: October 16, 2020Publication date: April 21, 2022Applicant: Applied Materials, Inc.Inventors: Sony Varghese, M. Arif Zeeshan, Shantanu Kallakuri, Kelvin Chan
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Publication number: 20220119955Abstract: Embodiments of the present disclosure include positioning a mask over a substrate, wherein the mask has a planar surface separated from a top surface of the substrate by a mask distance, and wherein a mask opening is provided through the planar surface. The method may further include positioning a mask element across the mask opening, the mask element including one or more solid portions and one or more openings, and depositing, through the mask opening, a deposition material onto the substrate, wherein the deposition material has a variable profile as a result of the one or more solid portions and the one or more openings.Type: ApplicationFiled: October 16, 2020Publication date: April 21, 2022Applicant: Applied Materials, Inc.Inventors: M. Arif Zeeshan, Shantanu Kallakuri, Joseph C. Olson
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Publication number: 20220100078Abstract: Methods and devices for producing substrates with variable height features are provided. In one example, a proximity mask may include a plate positioned over a substrate, wherein at least a portion of the plate is separated from the substrate by a distance. The plate may include a first opening and a second opening, wherein the first opening is defined by a first perimeter having a first shape, wherein the second opening is defined by a second perimeter having a second shape, and wherein the first shape is different than the second shape.Type: ApplicationFiled: September 25, 2020Publication date: March 31, 2022Applicant: Applied Materials, Inc.Inventors: M. Arif Zeeshan, Ross Bandy, Peter F. Kurunczi, Shantanu Kallakuri, Thomas Soldi, Joseph C. Olson
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Publication number: 20220093458Abstract: Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component) obtained using directional etching to remove predetermined portions of a seed layer covering the substrate. In several embodiments, directional etching followed by selective deposition can enable fill material (e.g., metal) patterning in tight spaces without any voids or seams. Void-free material depositions may be used in a variety of semiconductor devices, such as transistors, dual work function stacks, dynamic random-access memory (DRAM), non-volatile memory, and the like.Type: ApplicationFiled: September 22, 2020Publication date: March 24, 2022Applicant: Applied Materials, Inc.Inventors: M. Arif Zeeshan, Kelvin Chan, Shantanu Kallakuri, Sony Varghese, John Hautala
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Publication number: 20220068923Abstract: In one embodiment, a method of selectively forming a deposit may include providing a substrate, the substrate having a plurality of surface features, extending at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. The method may include directing a reactive beam to the plurality of surface features, the reactive beam defining a non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein a seed layer is deposited on a first portion of the surface features, and is not deposited on a second portion of the surface features. The method may further include exposing the substrate to a reactive deposition process after the directing the reactive ion beam, wherein a deposit layer selectively grows over the seed layer.Type: ApplicationFiled: September 3, 2020Publication date: March 3, 2022Applicant: Applied Materials, Inc.Inventors: M. Arif Zeeshan, Kelvin Chan, Shantanu Kallakuri, Sony Varghese