Abstract: A method of making sputter targets from a BCC metal or BCC metal alloy is provided. The ingot is e-beamed melted and subjected to vacuum arc reduction. The ingot is then tri-axially forged, keeping the centerline of the ingot in the center of the ingot during the tri-axial forging step. The ingot is then vacuum annealed and clock rolled. During the clock rolling, the center line of the ingot is maintained in the center of the ingot and perpendicular to the compressive forces used during the clock rolling. The clock rolled ingot is then vacuum annealed and provided in a near net shape for usage as a sputter target. Tantalum target materials are disclosed having a purity of at least 99.5% and an interstitial content (CONH) of less than about 25 ppm. Tantalum targets, in accordance with the invention, have a grain size of about 50 to 100 microns and a mixed {100}/{111} texture with a higher % {111} gradient towards the center.

Abstract: A method of making sputter targets from a BCC metal or BCC metal alloy is provided. The ingot is e-beamed melted and subjected to vacuum arc reduction. The ingot is then tri-axially forged, keeping the centerline of the ingot in the center of the ingot during the tri-axial forging step. The ingot is then vacuum annealed and clock rolled. During the clock rolling, the center line of the ingot is maintained in the center of the ingot and perpendicular to the compressive forces used during the clock rolling. The clock rolled ingot is then vacuum annealed and provided in a near net shape for usage as a sputter target. Tantalum target materials are disclosed having a purity of at least 99.5% and an interstitial content (CONH) of less than about 25 ppm. Tantalum targets, in accordance with the invention, have a grain size of about 50 to 100 microns and a mixed {100}/{111} texture with a higher % {111} gradient towards the center.