Patents by Inventor Mac Apodaca

Mac Apodaca has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multi-level phase change memory cells and method of making the same
    Patent number: 10991879
    Abstract: A phase change memory cell includes a first electrode, a second electrode located over the first electrode, a vertical pillar structure located between the first and second electrodes, the pillar structure containing a first phase change memory (PCM) material portion, a second PCM material portion and an intermediate electrode located between the first PCM material portion and the second PCM material portion, and a resistive liner containing a first segment electrically connected in parallel to the first PCM material portion between the first electrode and the intermediate electrode, and a second segment electrically connected in parallel to the second PCM material portion between the intermediate electrode and the second electrode. The first PCM material portion has a different electrical resistance than the second PCM material portion, and the first segment of the resistive liner has a different electrical resistance than the second segment of the resistive liner.
    Type: Grant
    Filed: June 26, 2019
    Date of Patent: April 27, 2021
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Ricardo Ruiz, Lei Wan, John Read, Zhaoqiang Bai, Mac Apodaca
  • MULTI-LEVEL PHASE CHANGE MEMORY CELLS AND METHOD OF MAKING THE SAME
    Publication number: 20200411754
    Abstract: A phase change memory cell includes a first electrode, a second electrode located over the first electrode, a vertical pillar structure located between the first and second electrodes, the pillar structure containing a first phase change memory (PCM) material portion, a second PCM material portion and an intermediate electrode located between the first PCM material portion and the second PCM material portion, and a resistive liner containing a first segment electrically connected in parallel to the first PCM material portion between the first electrode and the intermediate electrode, and a second segment electrically connected in parallel to the second PCM material portion between the intermediate electrode and the second electrode. The first PCM material portion has a different electrical resistance than the second PCM material portion, and the first segment of the resistive liner has a different electrical resistance than the second segment of the resistive liner.
    Type: Application
    Filed: June 26, 2019
    Publication date: December 31, 2020
    Inventors: Ricardo RUIZ, Lei WAN, John READ, Zhaoqiang BAI, Mac APODACA
  • Phase change memory device with crystallization template and method of making the same
    Patent number: 10868245
    Abstract: A phase change memory device includes a phase change material portion located between a first electrode and a second electrode, and a crystallization template material portion located between the first electrode and the second electrode in contact with the phase change material portion. The crystallization template material portion and the phase change material portion belong to a same crystal system and have matching lattice spacing, or the crystallization template material portion and the phase change material portion do not belong to the same crystal system, but have a matching translational symmetry along at least one paired lattice plane with a matching lattice spacing.
    Type: Grant
    Filed: June 5, 2019
    Date of Patent: December 15, 2020
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Zhaoqiang Bai, Mac Apodaca, Michael Grobis, Michael Nicolas Albert Tran, Neil Leslie Robertson, Gerardo Bertero
  • PHASE CHANGE MEMORY DEVICE WITH CRYSTALLIZATION TEMPLATE AND METHOD OF MAKING THE SAME
    Publication number: 20200388752
    Abstract: A phase change memory device includes a phase change material portion located between a first electrode and a second electrode, and a crystallization template material portion located between the first electrode and the second electrode in contact with the phase change material portion. The crystallization template material portion and the phase change material portion belong to a same crystal system and have matching lattice spacing, or the crystallization template material portion and the phase change material portion do not belong to the same crystal system, but have a matching translational symmetry along at least one paired lattice plane with a matching lattice spacing.
    Type: Application
    Filed: June 5, 2019
    Publication date: December 10, 2020
    Inventors: Zhaoqiang BAI, Mac APODACA, Michael GROBIS, Michael Nicolas Albert TRAN, Neil Leslie ROBERTSON, Gerardo BERTERO
  • Adhesion layer for a polymer memory device and method therefor
    Patent number: 6885021
    Abstract: Briefly, in accordance with one embodiment of the invention, a device, such as a memory cell, includes a dielectric layer and a layer of phase-change material with an adhesion layer between the dielectric layer and the layer of phase-change material.
    Type: Grant
    Filed: December 31, 2001
    Date of Patent: April 26, 2005
    Assignee: Ovonyx, Inc.
    Inventors: Mac Apodaca, Jon-Won S. Lee, Kuo-Wei Chang
  • Adhesion layer for a polymer memory device and method therefor
    Publication number: 20030122170
    Abstract: Briefly, in accordance with one embodiment of the invention, a device, such as a memory cell, includes a dielectric layer and a layer of phase-change material with an adhesion layer between the dielectric layer and the layer of phase-change material.
    Type: Application
    Filed: December 31, 2001
    Publication date: July 3, 2003
    Inventors: Mac Apodaca, Jon-Won S. Lee, Kuo-Wei Chang