Abstract: A method for controlling any of a responsivity, response time, and trap characteristics of a two-dimensional (2D) material on a self-assembled monolayers (SAMs) device, the method including modifying a surface of an oxide substrate, in an atomic scale, to create the 2D material, wherein the modifying the surface includes modifying a level of impurities trapped in the surface and a doping level of the surface, and forming charge carrier traps at the surface, wherein a capture rate and an emission rate of the charge carrier is influenced by an exposure to a light signal, and wherein the exposure to the light signal further changes the doping level of the surface.

Abstract: A method for controlling any of a responsivity, response time, and trap characteristics of a two-dimensional (2D) material on a self-assembled monolayers (SAMs) device, the method including modifying a surface of an oxide substrate, in an atomic scale, to create the 2D material, wherein the modifying the surface includes modifying a level of impurities trapped in the surface and a doping level of the surface, and forming charge carrier traps at the surface, wherein a capture rate and an emission rate of the charge carrier is influenced by an exposure to a light signal, and wherein the exposure to the light signal further changes the doping level of the surface.

Abstract: A micro-explosive material is provided. The micro-explosive material can include a carbon nanotube and a solid oxidizer attached to the carbon nanotube. The carbon nanotube with the solid oxidizer attached thereto is operable to burn per an exothermic chemical reaction between the carbon nanotube and the solid oxidizer such that a controlled burn and/or an explosive burn is provided. The micro-explosive material can be used as a heat generator, a gas generator, a micro-thruster, a primer for use with a larger explosive material, and the like.

Abstract: A reaction characteristic detector comprising a ladder assembly including a plurality of rungs, where each rung in the plurality of rungs comprises a reaction passage determiner spaced a distance from a point of an energetic material reaction initiation. Each reaction passage determiner has at least one characteristic that is configured to change in response to the reaction occurring proximate to the reaction passage determiner.

Abstract: According to embodiments, an optically-actuated mechanical device comprises at least one deformable section formed of: an element including an intrinsic stress differential or gradient, the stress tending to urge deformation of one portion relative to another portion; and an optically-sensitive material which is configured to (i) initially prevent deformation of the device, and (ii) upon sufficient heating by absorbing optical energy allows the element to deform. The devices may be incorporated into various devices and apparatuses for select, non-contact actuation using only optical energy, for example, via light, from one or more lasers. Methods for fabricating and actuating such devices are also disclosed.

Abstract: According to embodiments, an optically-actuated mechanical device comprises at least one deformable section formed of: an element including an intrinsic stress differential or gradient, the stress tending to urge deformation of one portion relative to another portion; and an optically-sensitive material which is configured to (i) initially prevent deformation of the device, and (ii) upon sufficient heating by absorbing optical energy allows the element to deform. The devices may be incorporated into various devices and apparatuses for select, non-contact actuation using only optical energy, for example, via light, from one or more lasers. Methods for fabricating and actuating such devices are also disclosed.

Abstract: Embodiments of energetic devices are provided herein. In some embodiments, an energetic device may include a substrate having a plurality of pores formed in a portion of the substrate; a plurality of carbon nanotubes disposed proximate the plurality of pores such that a reaction within one of the plurality of pores or the plurality of carbon nanotubes initiates a reaction within the other of the plurality of pores or the plurality of carbon nanotubes; a solid oxidizer disposed in the plurality of pores and the carbon nanotubes; and an initiator to initiate a reaction within one of the plurality of pores or the plurality of carbon nanotubes.

Abstract: A hetero-junction tunneling transistor having a first layer of p++ silicon germanium which forms a source for the transistor at one end. A second layer of n+ silicon material is deposited so that a portion of the second layer overlies the first layer and forms the drain for the transistor. An insulating layer and metallic gate for the transistor is deposited on top of the second layer so that the gate is aligned with the overlying portions of the first and second layers. The gate voltage controls the conduction between the source and the drain and the conduction between the first and second layers occurs by vertical tunneling between the layers.

Abstract: A micro-explosive material is provided. The micro-explosive material can include a carbon nanotube and a solid oxidizer attached to the carbon nanotube. The carbon nanotube with the solid oxidizer attached thereto is operable to burn per an exothermic chemical reaction between the carbon nanotube and the solid oxidizer such that a controlled burn and/or an explosive burn is provided. The micro-explosive material can be used as a heat generator, a gas generator, a micro-thruster, a primer for use with a larger explosive material, and the like.

Abstract: A reaction characteristic detector comprising a ladder assembly including a plurality of rungs, where each rung in the plurality of rungs comprises a reaction passage determiner spaced a distance from a point of an energetic material reaction initiation. Each reaction passage determiner has at least one characteristic that is configured to change in response to the reaction occurring proximate to the reaction passage determiner.

Abstract: Embodiments of graphene channel transistors and methods for producing same are provided herein. In some embodiments, a graphene channel transistor may include a substrate a having a source region, a drain region, and a dielectric material disposed between the source and drain regions; a channel region comprising a graphene layer disposed atop the dielectric material and partially atop the source and drain regions; and a composite gate electrode comprising an insulator layer disposed atop the graphene layer and a conductive layer disposed atop the insulator layer.

Abstract: A hetero-junction tunneling transistor having a first layer of p++ silicon germanium which forms a source for the transistor at one end. A second layer of n+ silicon material is deposited so that a portion of the second layer overlies the first layer and forms the drain for the transistor. An insulating layer and metallic gate for the transistor is deposited on top of the second layer so that the gate is aligned with the overlying portions of the first and second layers. The gate voltage controls the conduction between the source and the drain and the conduction between the first and second layers occurs by vertical tunneling between the layers.

Abstract: An optical electronic integrated circuit (OEIC) having optical waveguides as device interconnects. An optical waveguide is formed by depositing, in an oxygen-free atmosphere, a film of semiconductor material on a semiconductor substrate at a temperature that substantially diminishes the porosity of the film and the diffusion of material from the substrate into the film. The semiconductor film, which has an index of refraction greater than that of the substrate, is etched to form the optical waveguide on the substrate. The substrate also supports a plurality of active optical devices between which the optical waveguide extends. The substrate is preferably formed from gallium-arsenide and the waveguide from germanium. The active devices may also include these materials as well as aluminum-gallium-arsenide.

Abstract: An optical electronic integrated (circuit (OEIC) having optical waveguides s device interconnects. An optical waveguide is formed by depositing, in an oxygen-free atmosphere, a film of semiconductor material on a semiconductor substrate at a temperature that substantially diminishes the porosity of the film and the diffusion of material from the substrate into the film. The semiconductor film, which has an index of refraction greater than that of the substrate, is etched to form the optical waveguide on the substrate. The substrate also supports a plurality of active optical devices between which the optical waveguide extends. The substrate is preferably formed from gallium-arsenide and the waveguide from germanium. The active devices may also include these materials as well as aluminum-gallium-arsenide. When using these materials, the germanium film is deposited in an oxygen-free environment at about 100 degrees centigrade.

Abstract: An optical electronic integrated circuit (OEIC) having optical waveguides as device interconnects. An optical waveguide is formed by depositing, in an oxygen-free atmosphere, a film of semiconductor material on a semiconductor substrate at a temperature that substantially diminishes the porosity of the film and the diffusion of material from the substrate into the film. The semiconductor film, which has an index of refraction greater than that of the substrate, is etched to form the optical waveguide on the substrate. The substrate also supports a to plurality of active optical devices between which the optical waveguide extends. The substrate is preferably formed from gallium-arsenide and the waveguide from germanium. The active devices may also include these materials as well as aluminum-gallium-arsenide. When using these materials, the germanium film is deposited in an oxygen-free environment at about 100 degrees centigrade.

Abstract: The present invention is achieved by layering a dielectric slab between a ground plane and a two dimensional quasi quantum well heterostructure and by switching between an unbiased state and a negative potential which is established between the quantum well heterostructure and the ground plane. In the unbiased state, the device supports wave propagation in the dielectric with a phase velocity similar to that of a wave propagating in a parallel plate waveguide. Upon application of the bias voltage, that is establishing a negative potential difference between contacts based on either side of the quantum well heterostructure, the conductivity of the quantum well decreases. Therefore, as the carrier wave propagates the wave interacts with a boundary similar to that of a dielectric-air interface. This new boundary condition, in turn, produces a faster phase velocity. Hence, toggling the bias modulates the quantum well conductivity which changes the phase velocity of the carrier wave.