Abstract: One embodiment of the present invention provides a system for estimating parasitic capacitance for an integrated circuit. During operation, the system reads a technology file, which describes the composition of a vertical cross-section of the integrated circuit. Next, the system reads a design file, which specifies the layout of the integrated circuit. The system then identifies a set of dielectric configurations based on information contained in the technology file. It then computes Green's function for each of these configurations. Next, the system estimates a parasitic capacitance using information contained in the design file and using the set of Green's functions.

Abstract: The present system provides a number of hardware and software modules that emulate logic circuit designs for simulation purposes. The present system receives an initial logic circuit design and provides algorithms to recode, weight partition and interconnect an emulated logic circuit wherein the features of the original circuit design are preserved. The system further provides a monitoring of the internal signals within the emulated circuit.

Abstract: One embodiment of the present invention provides a system for estimating parasitic capacitance for an integrated circuit. During operation, the system reads a technology file, which describes the composition of a vertical cross-section of the integrated circuit. Next, the system reads a design file, which specifies the layout of the integrated circuit. The system then identifies a set of dielectric configurations based on information contained in the technology file. It then computes Green's function for each of these configurations. Next, the system estimates a parasitic capacitance using information contained in the design file and using the set of Green's functions.

Abstract: The present invention relates to a method and apparatus for determining capacitances and charge models for MOS devices to be used in calculating delays in a timing verifier for a circuit. The models are generated by first creating a variety of configurations of MOS devices which vary the inputs to the source, drain, and gate. Such inputs may include rising and falling values as well as constant values at VDD and VSS. Simulations are run on all of the configurations using conditions anticipated for the circuit to be analyzed. Capacitance values obtained from the simulations are used to determine models based upon length and width of the MOS devices using standard curve fitting techniques. Models then can be used for determining delays within the circuit.

Abstract: A system for rapidly accurate Elmore delays is disclosed which uses circuit simulations with different circuit configurations to generate Elmore delay models. From data generated by the simulations, Elmore delays are represented as functions of a capacitance charge and device width for a variety of device configurations. Similarly, accurate capacitance models are determined for each device. To determine an Elmore delay for a discharge path, the appropriate models are applied to each device and summed together. Within a timing verifier, the present invention can rapidly determine critical paths which require additional consideration.

Abstract: The present invention relates to a method and apparatus for determining capacitances and charge models for MOS devices to be used in calculating delays in a timing verifier for a circuit. The models are generated by first creating a variety of configurations of MOS devices which vary the inputs to the source, drain, and gate. Such inputs may include rising and falling values as well as constant values at VDD and VSS. Simulations are run on all of the configurations using conditions anticipated for the circuit to be analyzed. Capacitance values obtained from the simulations are used to determine models based upon length and width of the MOS devices using standard curve fitting techniques. Models then can be used for determining delays within the circuit.

Abstract: The present invention relates to a method and apparatus for determining capacitance and charge models for MOS devices to be used in calculating delays in a timing verifier for a circuit. The models are generated by first creating a variety of configurations of MOS devices which vary the inputs to the source, drain, and gate. Such inputs may include rising and falling values as well as constant values at VDD and VSS. Simulations are run on all of the configurations using conditions anticipated for the circuit to be analyzed. Capacitance values obtained from the simulations are used to determine models based upon length and width of the MOS devices using standard curve fitting techniques. Models then can be used for determining delays within the circuit.