Abstract: In fabricating an optical I/O array module, an optical waveguide provided with mirror parts, each having a tapered face, is formed on a substrate, a convex shaped member or a concave shaped member is placed at spots above the respective mirror parts of the optical waveguide, and laser diode arrays and photo diode arrays, provided with either a concave shape, or a convex shape, are mated with, or into the convex shaped member or the concave shaped member before being mounted. Further, there are formed multiple filmy layers, on which an LSI where a driver IC LSI of optical elements, and an amplifier LSI of the optical elements are integrated.

Abstract: A photoelectric composite wiring module, being superior in performances and mass-productivity thereof, and a transmission apparatus of applying that therein are provided. Optical devices 2a and 2b are disposed on a circuit board 1, so that they are optically coupled with optical guides 11 formed on the circuit board 1, wherein a filet-like resin is formed on a side surface of a bump, which is formed on side surfaces or/and upper portions of the optical devices, on an upper layer thereof being compressed a resin film to be adhered thereon, thereby forming an insulation film 31, and an electric wiring layer 3 is laminated, so that the electrodes of the optical devices 2 and wirings of the electric wiring layer are electrically connected with, and further thereon is mounted a semiconductor element 4; thereby obtaining the structure for brining the transmission speed to be high per channel, and for preventing the power consumption from increasing.

Abstract: A photoelectric composite wiring module includes a circuit substrate, an optical device, an LSI (device) having a driver and an amplifier for the optical device, and a thin film wiring layer having an electrical wiring. The optical device is connected with the LSI by means of the electrical wiring. The optical device is formed on the circuit substrate and optically coupled to an optical waveguide formed in the circuit substrate. The thin film wiring layer is formed on the optical device to ensure that the optical device is electrically connected with the electrical wiring of the thin film wiring layer. The LSI is mounted on and electrically connected with the thin film wiring layer.

Abstract: A photoelectric composite wiring module, being superior in performances and mass-productivity thereof, and a transmission apparatus of applying that therein are provided. Optical devices 2a and 2b are disposed on a circuit board 1, so that they are optically coupled with optical guides 11 formed on the circuit board 1, wherein a filet-like resin is formed on a side surface of a bump, which is formed on side surfaces or/and upper portions of the optical devices, on an upper layer thereof being compressed a resin film to be adhered thereon, thereby forming an insulation film 31, and an electric wiring layer 3 is laminated, so that the electrodes of the optical devices 2 and wirings of the electric wiring layer are electrically connected with, and further thereon is mounted a semiconductor element 4; thereby obtaining the structure for brining the transmission speed to be high per channel, and for preventing the power consumption from increasing.

Abstract: An RFID inlet by including: a base film; an antenna pattern formed on the base film; an insulation film layer formed on the antenna pattern and having a hole; an IC chip coupled to the antenna pattern inside the hole of the insulation film layer; and an underfill filled between the IC chip, the antenna, and the base film. The height of the IC chip top surface is at a higher level than the top surface of the insulation film layer, the underfill is formed between the IC chip and a wall surface of the hole of the insulation film layer.

Abstract: In fabricating an optical I/O array module, an optical waveguide provided with mirror parts, each having a tapered face, is formed on a substrate, a convex shaped member or a concave shaped member is placed at spots above the respective mirror parts of the optical waveguide, and laser diode arrays and photo diode arrays, provided with either a concave shape, or a convex shape, are mated with, or into the convex shaped member or the concave shaped member before being mounted. Further, there are formed multiple filmy layers, on which an LSI where a driver IC LSI of optical elements, and an amplifier LSI of the optical elements are integrated.

Abstract: A photoelectric composite wiring module includes a circuit substrate, an optical device, an LSI having a driver and an amplifier for the optical device, and a thin film wiring layer having an electrical wiring. The optical device is connected with the LSI by means of the electrical wiring. The optical device is formed on the circuit substrate and optically coupled to an optical waveguide formed in the circuit substrate. The thin film wiring layer is formed on the optical device to ensure that the optical device is electrically connected with the electrical wiring of the thin film wiring layer. The LSI is mounted on and electrically connected with the thin film wiring layer.

Abstract: An aluminum complex hydroxide salt having Al oxide octahedral layers and a divalent anion among the octahedral layers, wherein an aluminosilicate anion expressed by the following general formula (1), [NapAlqSirOz]2???(1) wherein p, q, r and z are positive numbers satisfying, 5?z?20, z=(p/2)+(3q/2)+2r+1, 0<p/q<1, 0.01?q/r?1 is, at least, contained as the divalent anion. The aluminum complex hydroxide salt can be favorably used as a compounding agent for resins, and exhibits excellent heat retaining property as well as excellent transparency particularly when it is mixed as a heat retaining agent into films for agricultural use.

Abstract: An aluminum complex hydroxide salt having Al oxide octahedral layers and a divalent anion among the octahedral layers, wherein an aluminosilicate anion expressed by the following general formula (1), [NapAlqSirOz]2???(1) wherein p, q, r and z are positive numbers satisfying, 5?z?20, z=(p/2)+(3q/2)+2r+1, 0<p/q<1, 0.01?q/r?1 is, at least, contained as the divalent anion. The aluminum complex hydroxide salt can be favorably used as a compounding agent for resins, and exhibits excellent heat retaining property as well as excellent transparency particularly when it is mixed as a heat retaining agent into films for agricultural use.

Abstract: When an RFID-tag is formed by joining a semiconductor chip (RFID chip) to an antenna consisting of a rolled metal foil or the like using ultrasonic waves, the pressure impressed to the semiconductor chip is suppressed to avoid the damage of the semiconductor chip. For this purpose, the present invention provides an RFID-tag 1 wherein gold bumps are joined to the metal foil by pressing the gold bumps formed on the semiconductor chip against an antenna member, and impressing ultrasonic waves; and the RFID-tag wherein a matte surface having a low glossiness is formed on the metal foil, or a surface having shallow rolling streaks is formed on the metal foil, and gold bumps are joined to the surface.

Abstract: The present invention aims to improve the durability of an RFID chip inlet. A module including an RFID chip amounted to an antenna is covered with polyimide film with an adhesive layer to make up an RFID inlet. The outer surface of the RFID inlet is then covered with the surface processed to increase surface lubricity of a base part. When the RFID inlet is for use in a rubber product, it is mounted to a rubber base of the rubber product, the exposed surface of the RFID inlet is covered with an unvulcanized rubber, and the unvulcanized rubber is then pressed and heated causing the RFID inlet to be embedded in the rubber base.

Abstract: There is a method of manufacturing an RFID, in which a semiconductor chip with a memory is bonded to an antenna, so that the information recorded in the memory can be transmitted through the antenna. In the RFID, a PET film, a PEN film, or a sheet of paper is used as the base material of the antenna. The method includes: aligning the semiconductor chip with gold bumps relative to the antenna, in which a metal foil formed of an aluminum or an aluminum alloy is adhered to the base material, including a polyethylene terephthalate or a polyethylene naphthalate; pressing the semiconductor chip to the antenna; and applying ultrasonic waves under an ambient temperature lower than the glass transition temperature of the polyethylene terephthalate or the polyethylene naphthalate, to thereby bond the gold bumps and the metal foil. Thus, the method suppresses the deformation of the antenna.

Abstract: A semiconductor apparatus in which flip chip bonding is enabled without any underfill, and which comprises a semiconductor device, an electrically insulating layer formed on the semiconductor device by mask-printing an electrically insulating material containing particles, and an external connection terminal formed on the electrically insulating layer and electrically connected with an electrode of the semiconductor device. The electrically insulating layer is formed with a thickness so as to provide ?-ray shielding of the semiconductor device.

Abstract: When an RFID-tag is formed by joining a semiconductor chip (RFID chip) to an antenna consisting of a rolled metal foil or the like using ultrasonic waves, the pressure impressed to the semiconductor chip is suppressed to avoid the damage of the semiconductor chip. For this purpose, the present invention provides an RFID-tag 1 wherein gold bumps are joined to the metal foil by pressing the gold bumps formed on the semiconductor chip against an antenna member, and impressing ultrasonic waves; and the RFID-tag wherein a matte surface having a low glossiness is formed on the metal foil, or a surface having shallow rolling streaks is formed on the metal foil, and gold bumps are joined to the surface.

Abstract: A semiconductor device is provided which enables a flip chip connection without use of underfill. The semiconductor device includes a semiconductor element having circuit electrodes and a circuit surface coated with a protecting film. A stress relaxation layer is provided by coating a cured thermoplastic resin onto the protecting film of the circuit surface in a manner which leaves the circuit electrodes exposed and curing it and having an inclination in the edge portion thereof. A wiring layer with wirings is connected to each of the circuit electrodes and disposed so as to make an electrical connection from the circuit electrodes, via the edge portion of the stress relaxation layer, and to a desired portion on the surface of the stress relaxation layer. A protecting film is provided thereon, and an external connection terminal is also provided.

Abstract: There is a method of manufacturing an RFID, in which a semiconductor chip with a memory is bonded to an antenna, so that the information recorded in the memory can be transmitted through the antenna. In the RFID, a PET film, a PEN film, or a sheet of paper is used as the base material of the antenna. The method includes: aligning the semiconductor chip with gold bumps relative to the antenna, in which a metal foil formed of an aluminum or an aluminum alloy is adhered to the base material, including a polyethylene terephthalate or a polyethylene naphthalate; pressing the semiconductor chip to the antenna; and applying ultrasonic waves under an ambient temperature lower than the glass transition temperature of the polyethylene terephthalate or the polyethylene naphthalate, to thereby bond the gold bumps and the metal foil. Thus, the method suppresses the deformation of the antenna.

Abstract: The present invention aims to improve the durability of an RFID chip inlet. A module including an RFID chip amounted to an antenna is covered with polyimide film with an adhesive layer to make up an RFID inlet. The outer surface of the RFID inlet is then covered with the surface processed to increase surface lubricity of a base part. When the RFID inlet is for use in a rubber product, it is mounted to a rubber base of the rubber product, the exposed surface of the RFID inlet is covered with an unvulcanized rubber, and the unvulcanized rubber is then pressed and heated causing the RFID inlet to be embedded in the rubber base.

Abstract: A composite metal polybasic salt containing a trivalent metal, zinc metal and a divalent metal as metal components and having a novel crystal structure, and a method of preparing the same. The invention further deals with a composite metal polybasic salt which has anion-exchanging property, which by itself is useful as an anion-exchanger, capable of introducing anions suited for the use upon anion-exchange, and finds a wide range of applications, and a method of preparing the same. The composite metal polybasic salt has a particular chemical composition and X-ray diffraction peaks, exhibiting peaks at 2&thgr;=2 to 15°, 2&thgr;=19.5 to 24° and 2&thgr;=33 to 50°, and a single peak at 2&thgr;=60 to 64° in the X-ray diffraction (Cu-&agr;).

Abstract: A composite metal polybasic salt containing a trivalent metal, zinc metal and a divalent metal as metal components and having a novel crystal structure, and a method of preparing the same. The invention further deals with a composite metal polybasic salt which has anion-exchanging property, which by itself is useful as an anion-exchanger, capable of introducing anions suited for the use upon anion-exchange, and finds a wide range of applications, and a method of preparing the same. The composite metal polybasic salt has a particular chemical composition and X-ray diffraction peaks, exhibiting peaks at 2&thgr;=2 to 15°, 2&thgr;=19.5 to 24° and 2&thgr;=33 to 50°, and a single peak at 2&thgr;=60 to 64° in the X-ray diffraction (Cu-&agr;).

Abstract: A semiconductor apparatus comprising a semiconductor device, an electrically insulating layer formed on the semiconductor device, and an external connection terminal formed on the electrically insulating layer and electrically connected to an electrode of the semiconductor device, wherein a power/ground line and a signal line in a region of from an edge of the electrically insulating layer to a uniform-thickness flat portion of the electrically insulating layer are different in kind of wiring pattern from each other.