Patents by Inventor Maggie L. F. Tan

Maggie L. F. Tan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7355896
    Abstract: A memory system includes a memory block having at least one memory cell. The current is sensed after the erase operations of the memory cell. A signal is generated in response to the current dropping below a predetermined level after the erase operations of the memory cell. The stress on the memory cell is reduced to a first reduced level for erase operations occurring subsequent to the current dropping below the predetermined level.
    Type: Grant
    Filed: December 22, 2005
    Date of Patent: April 8, 2008
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Wenbo Li, Maggie L. F. Tan, Siow Lee Chwa, Fei Xu