Patents by Inventor Maggy L. Lau

Maggy L. Lau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solar cell with high-temperature front electrical contact
    Patent number: 8044295
    Abstract: A solar cell has an active semiconductor structure and a back electrical contact overlying and contacting an active semiconductor structure back side. A front electrical contact is applied overlying and contacting the active semiconductor structure front side. The front electrical contact has multiple layers including a titanium layer overlying and contacting the active semiconductor structure front side, a diffusion layer overlying and contacting the titanium layer, a barrier layer overlying and contacting the diffusion layer, and a joining layer overlying and contacting the barrier layer. The front electrical contact may be applied by sequentially vacuum depositing the titanium layer, the diffusion layer, the barrier layer, and the joining layer in a vacuum deposition apparatus in a single pumpdown from ambient pressure. A front electrical lead is affixed overlying and contacting an attachment pad region of the front electrical contact.
    Type: Grant
    Filed: September 7, 2007
    Date of Patent: October 25, 2011
    Assignee: The Boeing Company, Inc.
    Inventors: Jerry R. Kukulka, Maggy L. Lau, Peter Hebert
  • Method of forming a semiconductor structure having metal migration semiconductor barrier layers
    Patent number: 7687386
    Abstract: A semiconductor structure includes a semiconductor substrate, a semiconductor active region, a semiconductor contact layer, at least one metal migration semiconductor barrier layer, and a metal contact. The metal migration semiconductor barrier layer may be embedded within the semiconductor contact layer. Furthermore, the metal migration semiconductor barrier layer may be located underneath or above and in intimate contact with the semiconductor contact layer. The metal migration semiconductor barrier layer and the semiconductor contact layer form a contact structure that prevents metals from migrating from the metal contact into the semiconductor active layer during long-term exposure to high temperatures.
    Type: Grant
    Filed: February 20, 2007
    Date of Patent: March 30, 2010
    Assignee: The Boeing Company
    Inventors: Hojun Yoon, Richard King, Jerry R. Kukulka, James H. Ermer, Maggy L. Lau
  • Solar cell with high-temperature front electrical contact, and its fabrication
    Patent number: 7285720
    Abstract: A solar cell has an active semiconductor structure and a back electrical contact overlying and contacting an active semiconductor structure back side. A front electrical contact is applied overlying and contacting the active semiconductor structure front side. The front electrical contact has multiple layers including a titanium layer overlying and contacting the active semiconductor structure front side, a diffusion layer overlying and contacting the titanium layer, a barrier layer overlying and contacting the diffusion layer, and a joining layer overlying and contacting the barrier layer. The front electrical contact may be applied by sequentially vacuum depositing the titanium layer, the diffusion layer, the barrier layer, and the joining layer in a vacuum deposition apparatus in a single pumpdown from ambient pressure. A front electrical lead is affixed overlying and contacting an attachment pad region of the front electrical contact.
    Type: Grant
    Filed: July 21, 2003
    Date of Patent: October 23, 2007
    Assignee: The Boeing Company, Inc.
    Inventors: Jerry R. Kukulka, Maggy L. Lau, Peter Hebert
  • Semiconductor structure with metal migration semiconductor barrier layers and method of forming the same
    Patent number: 7202542
    Abstract: A semiconductor structure includes a semiconductor substrate, a semiconductor active region, a semiconductor contact layer, at least one metal migration semiconductor barrier layer, and a metal contact. The metal migration semiconductor barrier layer may be embedded within the semiconductor contact layer. Furthermore, the metal migration semiconductor barrier layer may be located underneath or above and in intimate contact with the semiconductor contact layer. The metal migration semiconductor barrier layer and the semiconductor contact layer form a contact structure that prevents metals from migrating from the metal contact into the semiconductor active layer during long-term exposure to high temperatures.
    Type: Grant
    Filed: December 17, 2003
    Date of Patent: April 10, 2007
    Assignee: The Boeing Company
    Inventors: Hojun Yoon, Richard King, Jerry R. Kukulka, James H. Ermer, Maggy L. Lau