Abstract: Wafer-level methods of forming circuit elements, such as multilayer inductors or transformers, are provided. The methods include, for instance: forming, in at least one layer above a substrate, at least one conductive portion of the circuit element; providing an uncured polymer-dielectric material surrounding, at least in part, and overlying the conductive portion(s) of the element; partially curing the polymer-dielectric material to obtain a partially-hardened, polymer-dielectric material; and polishing the partially-hardened, polymer-dielectric material down to the conductive portion(s). The polishing planarizes the partially-hardened, polymer-dielectric material and exposes an upper surface of the conductive portion(s) to facilitate forming at least one other conductive portion of the element above and in electrical contact with the conductive portion(s). After polishing, curing of the polymer-dielectric material is completed.

Abstract: Wafer-level methods of forming circuit elements, such as multilayer inductors or transformers, are provided. The methods include, for instance: forming, in at least one layer above a substrate, at least one conductive portion of the circuit element; providing an uncured polymer-dielectric material surrounding, at least in part, and overlying the conductive portion(s) of the element; partially curing the polymer-dielectric material to obtain a partially-hardened, polymer-dielectric material; and polishing the partially-hardened, polymer-dielectric material down to the conductive portion(s). The polishing planarizes the partially-hardened, polymer-dielectric material and exposes an upper surface of the conductive portion(s) to facilitate forming at least one other conductive portion of the element above and in electrical contact with the conductive portion(s). After polishing, curing of the polymer-dielectric material is completed.

Abstract: Integrated circuits including copper pillar structures and methods for fabricating the same are disclosed. In one exemplary embodiment, an integrated circuit includes a last metal layer and a passivation layer disposed over the last metal layer, both the last metal and passivation layers being disposed over an integrated circuit active device on a semiconductor substrate. The integrated circuit further includes a copper pillar structure disposed partially within a first portion of the passivation layer and immediately over the last metal layer. The first portion of the passivation layer is defined by first and second sidewalls of the passivation layer and an upper surface of the last metal layer. The copper pillar structure includes a liner formed along the first and second sidewalls and over the upper surface of the last metal and a copper material within the liner.