Abstract: In one embodiment, an electronic system includes a decoder configured to decode an encoded data unit using multiple variable nodes and multiple check nodes to perform a low-density parity check (LDPC) decoding process. The encoded data unit can be received from a solid-state memory array. As part of performing the LDPC decoding process, the decoder can (i) convert reliability information representing first non-binary values to reliability information representing first binary values, (ii) determine reliability information representing second binary values using the reliability information representing first binary values, and (iii) convert the reliability information representing the second binary values to reliability information representing second non-binary values.

Abstract: Decoding logic is provided that is operational upon a data buffer to represent a plurality of variable nodes and a plurality of check nodes. For a respective one of the variable nodes, a vector component is selected from a confidence vector associated with the variable node. Using a respective one of the check nodes, a check node return value is calculated based on one or more other vector components from one or more other vectors and one or more vector indices corresponding to the one or more other vector components. The confidence vector is then updated based on the check node return value and an index for the check node return value, and a current state of a memory cell associated with the respective one of the variable nodes is determined based on a location of a primary one of multiple vector components within the updated confidence vector.

Abstract: In one embodiment, an electronic system includes a decoder configured to decode an encoded data unit using multiple variable nodes and multiple check nodes to perform a low-density parity check (LDPC) decoding process. The encoded data unit can be received from a solid-state memory array. As part of performing the LDPC decoding process, the decoder can (i) convert reliability information representing first non-binary values to reliability information representing first binary values, (ii) determine reliability information representing second binary values using the reliability information representing first binary values, and (iii) convert the reliability information representing the second binary values to reliability information representing second non-binary values.

Abstract: Decoding logic is provided that is operational upon a data buffer to represent a plurality of variable nodes and a plurality of check nodes. For a respective one of the variable nodes, a vector component is selected from a confidence vector associated with the variable node. Using a respective one of the check nodes, a check node return value is calculated based on one or more other vector components from one or more other vectors and one or more vector indices corresponding to the one or more other vector components. The confidence vector is then updated based on the check node return value and an index for the check node return value, and a current state of a memory cell associated with the respective one of the variable nodes is determined based on a location of a primary one of multiple vector components within the updated confidence vector.

Abstract: Systems and methods are disclosed for decoding solid-state memory cells using one-read soft decision decoding. A controller of a data storage device is configured to perform a first decoding of a first code word based at least in part on data associated with a reading of the first code word, and to detect a decoding failure associated with the first decoding. The controller determines reliability information for decoding the first code word in response to the decoding failure based at least in part on data associated with a successful decoding of a second code word and performs a second decoding of the first code word based at least in part on the reliability information.

Abstract: Data storage systems may include a solid-state memory array configured to store encoded data units and a controller configured to decode the encoded data units. Decoding the encoded data units may include updating a check node of a plurality of check nodes associated with a parity check matrix by identifying first and second sets of variable nodes in a plurality of variable nodes associated in the parity check matrix with the check node and constructing a trellis based on the second set of variable nodes. The trellis may be used to determine a message and, based at least in part on the message, a first set of messages to be sent from the check node to the first set of variable nodes may be determined. A second set of messages to be sent from the check node to each variable node in the second set of variable nodes also may be determined.

Abstract: Aspects of the subject technology relate to a method for reading information stored in a flash memory device. In some implementations, the method can include steps including, obtaining a first read signal of a first cell, wherein the first cell is located in a first word line and in a first bit line in the flash memory device, obtaining a programming level of a second cell, wherein the second cell is located in a second word line and in the first bit line, and wherein the second word line is adjacent to the first word line. In certain aspects, the method may further comprise steps for obtaining decoding information for the first cell based on the programming level of the second cell, wherein the decoding information is derived from a first set of reference voltage distributions corresponding to the obtained programming level of the second cell. A data storage system and a non-transitory machine readable storage medium are also provided.

Abstract: Aspects of the subject technology relate to a method for reading information stored in a flash memory device. In some implementations, the method can include steps including, obtaining a first read signal of a first cell, wherein the first cell is located in a first word line and a first bit line in the flash memory device, obtaining a programming level of a second cell, wherein the second cell is located in a second word line and the first bit line, and wherein the second word line is adjacent to the first word line. In certain aspects, the method may further comprise steps for obtaining decoding information for the first cell based on the programming level of the second cell. A data storage system and article of manufacture are also provided.

Abstract: Decoding logic is provided that is operational upon a data buffer to represent a plurality of variable nodes and a plurality of check nodes. For a respective one of the variable nodes, a vector component is selected from a confidence vector associated with the variable node. Using a respective one of the check nodes, a check node return value is calculated based on one or more other vector components from one or more other vectors and one or more vector indices corresponding to the one or more other vector components. The confidence vector is then updated based on the check node return value and an index for the check node return value, and a current state of a memory cell associated with the respective one of the variable nodes is determined based on a location of a primary one of multiple vector components within the updated confidence vector.

Abstract: Systems and methods are disclosed for decoding solid-state memory cells. In certain embodiments, a data storage device includes a controller configured to decode a non-volatile memory array by performing a first read of a plurality of code words from the non-volatile memory array using a first reference voltage level and performing a second read of the plurality of code words using a second reference voltage level on a first side of the first reference voltage level. The controller is further configured to generate a soft-decision input value associated with a first code word of the plurality of code words based on the first and second reads and decode the first code word using the soft-decision input value.

Abstract: A custom decoding algorithm is introduced, in connection with a corresponding decoding structure, to resolve many complexity and large memory requirements of known decoders. A system. A variable node forms a confidence vector of four components, one component for each state of a memory cell, and passes the current primary component (e.g., the largest) to one or more check nodes. The check nodes calculate a temporary component and corresponding index based on all components received from the variable nodes, which they pass back to the respective variable nodes. The variable node updates the confidence vector based on the temporary nodes received from respective check nodes, and determines the correct state for corresponding memory cell based on which component in the confidence vector is currently the primary component.

Abstract: A pre-distorter is provided for distorting an RF input signal to provide a pre-distorted radio frequency (RF) input signal to an amplifier that provides an amplified RF output signal, wherein the RF input signal has an envelope. The pre-distorter includes: a radio-frequency signal processing circuit that distorts the RF input signal according to a polynomial of powers of the envelope, each power of the envelope being weighted by a corresponding pre-distortion weight; and a performance monitor operable to compare a version of the amplified RF output signal to a delayed version of the RF input signal to provide an error signal, wherein the performance monitor is configured to iteratively adapt the coefficients based upon a gradient of a cost function, the cost function being a function of the error signal.