Abstract: A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.

Abstract: A vertical-cavity surface-emitting laser (VCSEL) has a substrate formed of GaAs. A pair of mirrors is provided wherein one of the pair of mirrors is formed on the substrate. A tunnel junction is formed between the pair of mirrors.

Abstract: A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.

Abstract: A photodiode has a substrate. A mesa structure is formed on the substrate, wherein the mesa structure has an n region containing an n type dopant formed on the substrate, an intermediate region positioned on the n region and a p region formed on the intermediate region and containing a p type dopant. A contact is formed on a top surface of the mesa and attached to the p region. The contact is formed around an outer perimeter of the mesa. The mesa has a diameter of 30 um or less.

Abstract: A photodiode has a substrate. A mesa structure is formed on the substrate, wherein the mesa structure has an n region containing an n type dopant formed on the substrate, an intermediate region positioned on the n region and a p region formed on the intermediate region and containing a p type dopant. A contact is formed on a top surface of the mesa and attached to the p region. The contact is formed around an outer perimeter of the mesa. The mesa has a diameter of 30 um or less.

Abstract: A method of semiconductor device fabrication that enables fine-line geometry lithographic definition and small form-factor packaging comprises: forming contacts on a metal layer of the semiconductor device; applying a protective mask layer over active regions and surfaces of the contacts having rough surface morphology; planarizing a surface of the semiconductor device until the protective mask layer is removed and the surfaces of the contacts having rough surface morphology are planarized; and forming contact stacks on the surfaces of the contacts which are planarized.

Abstract: A method for forming a Bulk Acoustic Wave (BAW) structure comprises forming a piezoelectric material on a first substrate; applying a first metal layer on a top surface of the piezoelectric material; forming a metal pattern on a second substrate, the metal pattern forming a cavity pattern between raised areas of the metal pattern; attaching the first metal layer to a top area of the metal pattern forming a plurality of cavity areas; removing the first substrate; and applying a second metal layer on a bottom surface of the piezoelectric material.

Abstract: A method of forming a Tunnel Junction (TJ) Vertical Cavity Surface Emitting Laser (VCSEL) array comprises forming a first mirror device on a substrate; forming an active region on the first mirror device; forming a first portion of a second mirror device on the active region; forming a plurality of tunnel junctions on the first portion of the second mirror device; and forming a second portion of the second mirror device through an epitaxial overgrowth, the second portion of the second mirror device covering the plurality of tunnel junctions, wherein individual VCSEL elements of the TJ VCSEL array are electrically connected through the epitaxial overgrowth of the second portion of the second mirror device.

Abstract: A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.

Abstract: A method for forming an acoustic resonator comprising: forming a piezoelectric material on a first substrate; and applying the piezoelectric material to a second substrate on which the acoustic resonator is fabricated upon.

Abstract: A method of semiconductor device fabrication that enables fine-line geometry lithographic definition and small form-factor packaging comprises: forming contacts on a metal layer of the semiconductor device; applying a protective mask layer over active regions and surfaces of the contacts having rough surface morphology; planarizing a surface of the semiconductor device until the protective mask layer is removed and the surfaces of the contacts having rough surface morphology are planarized; and forming contact stacks on the surfaces of the contacts which are planarized

Abstract: An opto-electronic device has a backside Vertical Cavity Surface Emitting Laser (VCSEL) device. An optical component is formed on a rear surface of the backside VCSEL device.

Abstract: A Bulk Acoustic Resonator (BAR) structure has a substrate. A cavity pattern is formed on the substrate. A Bulk Acoustic Wave (BAW) structure is formed on the cavity pattern and the substrate, wherein portions of the cavity pattern are exposed. The cavity pattern under the BAW structure is removed creating a self-sustaining cavity to form the novel cavity structure.

Abstract: A method of forming a Tunnel Junction (TJ) Vertical Cavity Surface Emitting Laser (VCSEL) array comprises forming a first mirror device on a substrate; forming an active region on the first mirror device; forming a first portion of a second mirror device on the active region; forming a plurality of tunnel junctions on the first portion of the second mirror device; and forming a second portion of the second mirror device through an epitaxial overgrowth, the second portion of the second mirror device covering the plurality of tunnel junctions, wherein individual VCSEL elements of the TJ VCSEL array are electrically connected through the epitaxial overgrowth of the second portion of the second mirror device.

Abstract: A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.

Abstract: A vertical-cavity surface-emitting laser (VCSEL) has a substrate formed of GaAs. A pair of mirrors is provided wherein one of the pair of mirrors is formed on the substrate. A tunnel junction is formed between the pair of mirrors.

Abstract: Wafer oxidation apparatus for selective oxidation of a semiconductor workpiece has an oxidation chamber. The oxidation chamber is heated by external infrared heating lamps. A chuck assembly is disposed within the oxidation chamber and configured to be approximately thermally isolated from the oxidation chamber. Carrier gas pathways deliver heated carrier gasses to the oxidation chamber at variable rates for oxidation uniformity.

Abstract: Wafer oxidation apparatus for selective oxidation of a semiconductor workpiece has an oxidation chamber. The oxidation chamber is heated by external infrared heating lamps. A chuck assembly is disposed within the oxidation chamber and configured to be approximately thermally isolated from the oxidation chamber. Carrier gas pathways deliver heated carrier gasses to the oxidation chamber at variable rates for oxidation uniformity.

Abstract: A method for forming an acoustic resonator comprising: forming a piezoelectric material on a first substrate; and applying the piezoelectric material to a second substrate on which the acoustic resonator is fabricated upon.

Abstract: A method of transferring an epitaxial film from an original substrate to a destination substrate comprises: growing an epitaxial film grown with a sacrificial layer on the original substrate; patterning the epitaxial film into a plurality of sections; attaching the plurality of sections to a stretchable film; removing the plurality of sections attached to the stretchable film from the original substrate; stretching the sections apart as needed; and attaching a permanent substrate to the plurality of sections; and trimming the sizes of the sections as needed for precise positioning prior to integrated circuit device fabrication.