Abstract: The invention provides a composition set comprising: a conductor layer-forming composition comprising a dispersing medium and inorganic particles comprising a metallic oxide; and a conductive adhesive composition comprising a binder and conductive particles having a number average particle size of from 1 nm to 3000 nm.

Abstract: There is provided a liquid composition that can form a resistor exhibiting a stable resistance value. One mode of the liquid composition of the invention is a liquid composition comprising (a) an epoxy resin, (b) carbon black particles, (c) carbon nanotubes and (d) a solvent with a vapor pressure of less than 1.34×103 Pa at 25° C.

Abstract: There is provided a production method for an optical semiconductor device including a substrate having a silver plating layer formed on a surface and a light emitting diode bonded to the silver plating layer. The production method includes a film formation step of forming a clay film covering the silver plating layer and a connection step of electrically connecting the light emitting diode and the silver plating layer covered with the clay film by wire bonding, after the film formation step.

Abstract: An etching material including at least one boron compound selected from a Lewis acid that includes, in its structure, boron and a halogen that is bonded to the boron, a salt of the Lewis acid and a compound that generates the Lewis acid.

Abstract: An optical semiconductor device includes a substrate that has a silver plating layer formed on a surface, a light emitting diode that is bonded to the silver plating layer, a light reflecting portion that surrounds the light emitting diode, a transparent sealing portion that is filled into the light reflecting portion and seals the light emitting diode, and a clay film that covers the silver plating layer. The transparent sealing portion and the light reflecting portion are bonded to each other.

Abstract: Disclosed are: a copper metal film which has good adhesion to a substrate, low volume resistivity, and good deep-part metal properties; and a method for producing a copper metal film, wherein the copper metal film can be produced by reducing a substrate to a deep part thereof without damaging the substrate. Specifically disclosed is a copper metal film obtained by treating a copper-based particle deposition layer containing both copper oxides and a metallic transition metal or alloy, or a transition metal complex containing a metal element, with gaseous formic acid and/or formaldehyde heated to 120° C. or higher. The copper oxide is preferably copper (I) oxide and/or copper (II) oxide. The transition metal, alloy or metal complex are preferably a metal selected from the group consisting of Cu, Pd, Pt, Ni, Ag, Au and Rh, an alloy containing the metal, or a complex containing the metal element, respectively.

Abstract: The silver surface treatment agent of the present invention contains a layered silicate compound. The light-emitting device of the present invention comprises a substrate having a silver-plated layer; a light-emitting diode mounted on the substrate; and a film, provided on a surface of the silver-plated layer, containing a layered silicate compound.

Abstract: There is provided a liquid composition that can form a resistor exhibiting a stable resistance value. One mode of the liquid composition of the invention is a liquid composition comprising (a) an epoxy resin, (b) carbon black particles, (c) carbon nanotubes and (d) a solvent with a vapor pressure of less than 1.34×103 Pa at 25° C.

Abstract: An etching material including at least one boron compound selected from a Lewis acid that includes, in its structure, boron and a halogen that is bonded to the boron, a salt of the Lewis acid and a compound that generates the Lewis acid.

Abstract: There is provided a production method for an optical semiconductor device including a substrate having a silver plating layer formed on a surface and a light emitting diode bonded to the silver plating layer. The production method includes a film formation step of forming a clay film covering the silver plating layer and a connection step of electrically connecting the light emitting diode and the silver plating layer covered with the clay film by wire bonding, after the film formation step.

Abstract: A silver-sulfidation-preventing material of the present invention comprises clay and a binder.

Abstract: An optical semiconductor device includes a substrate that has a silver plating layer formed on a surface, a light emitting diode that is bonded to the silver plating layer, a light reflecting portion that surrounds the light emitting diode, a transparent sealing portion that is filled into the light reflecting portion and seals the light emitting diode, and a clay film that covers the silver plating layer. The transparent sealing portion and the light reflecting portion are bonded to each other.

Abstract: There is provided a liquid composition that can form a resistor exhibiting a stable resistance value. One mode of the liquid composition of the invention is a liquid composition comprising (a) an epoxy resin, (b) carbon black particles, (c) carbon nanotubes and (d) a solvent with a vapor pressure of less than 1.34×103 Pa at 25° C.

Abstract: The silver surface treatment agent of the present invention contains a layered silicate compound. The light-emitting device of the present invention comprises a substrate having a silver-plated layer; a light-emitting diode mounted on the substrate; and a film, provided on a surface of the silver-plated layer, containing a layered silicate compound.

Abstract: The invention provides a composition set comprising: a conductor layer-forming composition comprising a dispersing medium and inorganic particles comprising a metallic oxide; and a conductive adhesive composition comprising a binder and conductive particles having a number average particle size of from 1 nm to 3000 nm.

Abstract: There is provided a liquid composition that can form a resistor exhibiting a stable resistance value. One mode of the liquid composition of the invention is a liquid composition comprising (a) an epoxy resin, (b) carbon black particles, (c) carbon nanotubes and (d) a solvent with a vapor pressure of less than 1.34×103 Pa at 25° C.

Abstract: Disclosed are: a copper metal film which has good adhesion to a substrate, low volume resistivity, and good deep-part metal properties; and a method for producing a copper metal film, wherein the copper metal film can be produced by reducing a substrate to a deep part thereof without damaging the substrate. Specifically disclosed is a copper metal film obtained by treating a copper-based particle deposition layer containing both copper oxides and a metallic transition metal or alloy, or a transition metal complex containing a metal element, with gaseous formic acid and/or formaldehyde heated to 120° C. or higher. The copper oxide is preferably copper (I) oxide and/or copper (II) oxide. The transition metal, alloy or metal complex are preferably a metal selected from the group consisting of Cu, Pd, Pt, Ni, Ag, Au and Rh, an alloy containing the metal, or a complex containing the metal element, respectively.

Abstract: Disclosed is a printing ink comprising Cu- and/or CuO-containing metal nanoparticles, which obtains excellent dispersion properties and successive dispersion stability without using additives such as dispersing agents. Specifically disclosed is a printing ink that comprises Cu- and/or CuO-containing metal nanoparticles and has no more than 2,600 ppm of ionic impurities in the total solid content. The printing ink is obtained by dispersing the Cu- and/or CuO-containing metal nanoparticles, which have no more than 2,600 ppm of ionic impurities in the total solid content, in a dispersion medium.