Patents by Inventor Maki Suemitsu
Maki Suemitsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10580869Abstract: A stacked body includes: a substrate made of silicon carbide and having a first main surface forming an angle of 20° or less with a silicon plane; and a graphene film disposed on the first main surface and having an atomic arrangement oriented in relation to an atomic arrangement of silicon carbide forming the substrate. In an exposed surface of the graphene film which is a main surface opposite to the substrate, an area ratio of a region having a full width at half maximum of G? of 40 cm?1 or less under Raman spectroscopy analysis is 50% or more. Accordingly, the stacked body is provided that enables a high mobility to be stably ensured in an electronic device manufactured to include the graphene film forming an electrically conductive portion.Type: GrantFiled: April 19, 2017Date of Patent: March 3, 2020Assignees: Sumitomo Electric Industries, Ltd., Tohoku UniversityInventors: Masaya Okada, Fuminori Mitsuhashi, Yasunori Tateno, Masaki Ueno, Maki Suemitsu, Hirokazu Fukidome
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Patent number: 10529807Abstract: A stacked body includes: a substrate made of silicon carbide and having a first main surface forming an angle of 20° or less with a carbon plane; and a graphene film disposed on the first main surface and having an atomic arrangement oriented in relation to an atomic arrangement of silicon carbide forming the substrate. In an exposed surface of the graphene film as seen in plan view, 10 or less regions are present per 1 mm2, the exposed surface being a main surface opposite to the substrate, and the regions each including 10 or more graphene layers and having a circumcircle with a diameter of 5 ?m or more and 100 ?m or less. Accordingly, the stacked body is provided that enables a high mobility to be stably ensured in an electronic device manufactured to include the graphene film forming an electrically conductive portion.Type: GrantFiled: April 19, 2017Date of Patent: January 7, 2020Assignees: Sumitomo Electric Industries, Ltd., Tohoku UniversityInventors: Masaya Okada, Fuminori Mitsuhashi, Masaki Ueno, Yasunori Tateno, Maki Suemitsu, Hirokazu Fukidome
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Patent number: 10283594Abstract: A silicon carbide (SiC) structure and a method of forming the SiC structure are disclosed. The SiC structure includes an SiC substrate and a film provided on the SiC substrate. The SiC substrate contains both of a hexagonal close packed (hcp) structure and a face centered cubic (fcc) structure, and has only one of the hcp surface and the fcc surface, where the hcp surface includes atoms in the topmost layer whose rows overlap with rows of atoms in the third layer, while, the fcc surface includes atoms in the topmost layer whose rows are different from rows of atoms in the third layer.Type: GrantFiled: September 1, 2017Date of Patent: May 7, 2019Assignees: SUMITOMO ELECTRIC INDUSTRIES, LTD., TOHOKU UNIVERSITYInventors: Hiroyuki Nagasawa, Maki Suemitsu, Hirokazu Fukidome, Yasunori Tateno, Fuminori Mitsuhashi, Masaya Okada, Masaki Ueno
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Patent number: 10217823Abstract: An electron device having a channel layer made of graphene is disclosed. The electron device includes a graphene layer on a substrate, and a source electrode, a drain electrode, and a gate insulating film on the graphene layer. The electron device further includes a first gate electrode on the gate insulating film between the source electrode and the drain electrode, and a second gate electrode within the substrate. For the second gate electrode, another gate insulating film is on the graphene layer, or alternatively, a part of the substrate is interposed between the second gate electrode and the channel layer.Type: GrantFiled: December 13, 2017Date of Patent: February 26, 2019Assignees: SUMITOMO ELECTRIC INDUSTRIES, LTD., TOHOKU UNIVERSITYInventors: Yasunori Tateno, Masaki Ueno, Masaya Okada, Fuminori Mitsuhashi, Maki Suemitsu, Hirokazu Fukidome
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Publication number: 20180166537Abstract: An electron device having a channel layer made of graphene is disclosed. The electron device includes a graphene layer on a substrate, electrodes of source, drain, and a gate insulating film on the graphene layer. The electron device further includes a firs gate electrode on the gate insulating film between the source electrode and the drain electrode, and further includes a second gate electrode within the substrate. The second gate electrode puts another gate insulating film against the graphene layer, or a part of the substrate.Type: ApplicationFiled: December 13, 2017Publication date: June 14, 2018Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD., TOHOKU UNIVERSITYInventors: Yasunori Tateno, Masaki Ueno, Masaya Okada, Fuminori Mitsuhashi, Maki Suemitsu, Hirokazu Fukidome
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Publication number: 20180130912Abstract: A field effect transistor (FET) including a graphene layer as a carrier transporting channel is disclosed. The FET provides, on a substrate, a graphene layer, and electrodes of the source and drain on the graphene layer. The FET further provides a couple of gate electrodes and a supplemental electrode, where the former two gate electrodes are provided on a gate insulating film, while, the latter one is provided on the graphene layer and between two gate electrodes. The second gate electrode provided closer to the drain electrode has a gate length that is shorter than the gate length of the first gate electrode provided closer to the source electrode.Type: ApplicationFiled: November 6, 2017Publication date: May 10, 2018Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD., TOHOKU UNIVERSITYInventors: Yasunori TATENO, Masaki UENO, Masaya OKADA, Fuminori MITSUHASHI, Maki SUEMITSU, Hirokazu FUKlDOME
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Publication number: 20180069081Abstract: A silicon carbide (SiC) structure and a method of forming the SiC structure are disclosed. The SiC structure includes an SiC substrate and a film provided on the SiC substrate. The SiC substrate contains both of a hexagonal close packed (hcp) structure and a face centered cubic (fcc) structure, and has only one of the hcp surface and the fcc surface, where the hcp surface includes atoms in the topmost layer whose rows overlap with rows of atoms in the third layer, while, the fcc surface includes atoms in the topmost layer whose rows are different from rows of atoms in the third layer.Type: ApplicationFiled: September 1, 2017Publication date: March 8, 2018Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD., TOHOKU UNIVERSITYInventors: Hiroyuki NAGASAWA, Maki SUEMITSU, Hirokazu FUKlDOME, Yasunori TATENO, Fuminori MITSUHASHI, Masaya OKADA, Masaki UENO
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Patent number: 9806156Abstract: A laminated body includes: a substrate portion composed of silicon carbide; and a graphene film disposed on a first main surface of the substrate portion, the graphene film having an atomic arrangement oriented with respect to an atomic arrangement of the silicon carbide of the substrate portion. A region in which a value of G?/G in Raman spectrometry is not less than 1.2 is not less than 10% in an area ratio in an exposed surface of the graphene film, the exposed surface being a main surface of the graphene film opposite to the substrate portion.Type: GrantFiled: November 4, 2016Date of Patent: October 31, 2017Assignees: Sumitomo Electric Industries, Ltd., Tohoku UniversityInventors: Fuminori Mitsuhashi, Takashi Ishizuka, Masaki Ueno, Yoshihiro Tsukuda, Yasunori Tateno, Maki Suemitsu, Hirokazu Fukidome, Hiroyuki Nagasawa
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Publication number: 20170301758Abstract: A stacked body includes: a substrate made of silicon carbide and having a first main surface forming an angle of 20° or less with a silicon plane; and a graphene film disposed on the first main surface and having an atomic arrangement oriented in relation to an atomic arrangement of silicon carbide forming the substrate. In an exposed surface of the graphene film which is a main surface opposite to the substrate, an area ratio of a region having a full width at half maximum of G? of 40 cm?1 or less under Raman spectroscopy analysis is 50% or more. Accordingly, the stacked body is provided that enables a high mobility to be stably ensured in an electronic device manufactured to include the graphene film forming an electrically conductive portion.Type: ApplicationFiled: April 19, 2017Publication date: October 19, 2017Inventors: Masaya Okada, Fuminori Mitsuhashi, Yasunori Tateno, Masaki Ueno, Maki Suemitsu, Hirokazu Fukidome
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Publication number: 20170301759Abstract: A stacked body includes: a substrate made of silicon carbide and having a first main surface forming an angle of 20° or less with a carbon plane; and a graphene film disposed on the first main surface and having an atomic arrangement oriented in relation to an atomic arrangement of silicon carbide forming the substrate. In an exposed surface of the graphene film as seen in plan view, 10 or less regions are present per 1 mm2, the exposed surface being a main surface opposite to the substrate, and the regions each including 10 or more graphene layers and having a circumcircle with a diameter of 5 ?m or more and 100 ?m or less. Accordingly, the stacked body is provided that enables a high mobility to be stably ensured in an electronic device manufactured to include the graphene film forming an electrically conductive portion.Type: ApplicationFiled: April 19, 2017Publication date: October 19, 2017Inventors: Masaya Okada, Fuminori Mitsuhashi, Masaki Ueno, Yasunori Tateno, Maki Suemitsu, Hirokazu Fukidome
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Patent number: 9741859Abstract: A field effect transistor (FET) with a graphene layer as a channel layer is disclosed. The FET provides two gate electrodes, one of which receives the gate bias, while, the other receives a reference bias. An intermediate electrode made of ohmic metal to the graphene layer is provided between the two gate electrodes. The second gate electrode receiving the reference bias suppresses the hole injection into the channel beneath the first gate electrode.Type: GrantFiled: September 3, 2015Date of Patent: August 22, 2017Assignees: Sumitomo Electric Industries, Ltd., Tohoku UniversityInventors: Yasunori Tateno, Maki Suemitsu, Hirokazu Fukidome
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Publication number: 20170148880Abstract: A laminated body includes: a substrate portion composed of silicon carbide; and a graphene film disposed on a first main surface of the substrate portion, the graphene film having an atomic arrangement oriented with respect to an atomic arrangement of the silicon carbide of the substrate portion. A region in which a value of G?/G in Raman spectrometry is not less than 1.2 is not less than 10% in an area ratio in an exposed surface of the graphene film, the exposed surface being a main surface of the graphene film opposite to the substrate portion.Type: ApplicationFiled: November 4, 2016Publication date: May 25, 2017Inventors: Fuminori Mitsuhashi, Takashi Ishizuka, Masaki Ueno, Yoshihiro Tsukuda, Yasunori Tateno, Maki Suemitsu, Hirokazu Fukidome, Hiroyuki Nagasawa
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Publication number: 20160071982Abstract: A field effect transistor (FET) with a graphene layer as a channel layer is disclosed. The FET provides two gate electrodes, one of which receives the gate bias, while, the other receives a reference bias. An intermediate electrode made of ohmic metal to the graphene layer is provided between the two gate electrodes. The second gate electrode receiving the reference bias suppresses the hole injection into the channel beneath the first gate electrode.Type: ApplicationFiled: September 3, 2015Publication date: March 10, 2016Inventors: Yasunori TATENO, Maki SUEMITSU, Hirokazu FUKIDOME
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Publication number: 20110117372Abstract: Provided are a high-quality graphene or graphite thin film compatible with a large surface area, a manufacturing method that can epitaxially form the graphene or graphite thin film on a Si substrate, a thin film structure, and an electronic device having the same. The present invention provides a graphene or graphite thin film formed on a cubic SiC crystal thin film having a (111) orientation formed on a Si substrate, the cubic SiC crystal thin film being used as a base material. Additionally, the development of ultra-high-speed devices that support next-generation high-speed communication services can be advanced by means of an electronic device having a graphene or graphite thin film structure grown as a crystal on a substrate.Type: ApplicationFiled: March 9, 2009Publication date: May 19, 2011Applicant: TOHOKU UNIVERSITYInventors: Maki Suemitsu, Atsushi Konno, Yu Miyamoto
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Patent number: 6566279Abstract: An organic silicon gas having Si—H bond and Si—C bond is supplied onto a Si-contained base material, to form a SiC film on a main surface of the base material. Moreover, An organic silicon gas having Si—H bond and Si—C bond is supplied onto a Si-contained base material, to form a SiC underfilm. Then, a SiC film is formed on the SiC underfilm to fabricate a SiC multi-layered film structure.Type: GrantFiled: August 27, 2001Date of Patent: May 20, 2003Assignee: Tohoku UniversityInventors: Maki Suemitsu, Hideki Nakazawa
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Publication number: 20020102862Abstract: An organic silicon gas having Si—H bond and Si—C bond is supplied onto a Si-contained base material, to form a SiC film on a main surface of the base material. Moreover, An organic silicon gas having Si—H bond and Si—C bond is supplied onto a Si-contained base material, to form a SiC underfilm. Then, a SiC film is formed on the SiC underfilm to fabricate a SiC multi-layered film structure.Type: ApplicationFiled: August 27, 2001Publication date: August 1, 2002Applicant: TOHOKU UNIVERSITYInventors: Maki Suemitsu, Hideki Nakazawa