Abstract: In accordance with an embodiment, an analytical apparatus includes a member, a voltage source connected to the member and a detecting section. The member has an inserting portion into which a sample holder supporting a sample is insertable and whose shape corresponds to a shape of the sample holder. The detecting section is configured to detect a substance to be emitted from the sample by field evaporation. The shape of the inserting portion in a cross section of a direction perpendicular to an inserting direction of the sample holder is a shape excluding a perfect circle.

Abstract: In accordance with an embodiment, an analytical apparatus includes a member, a voltage source connected to the member and a detecting section. The member has an inserting portion into which a sample holder supporting a sample is insertable and whose shape corresponds to a shape of the sample holder. The detecting section is configured to detect a substance to be emitted from the sample by field evaporation. The shape of the inserting portion in a cross section of a direction perpendicular to an inserting direction of the sample holder is a shape excluding a perfect circle.

Abstract: According to one embodiment, an impurity analysis method comprises performing vapor-phase decomposition on a silicon-containing film formed on a substrate, heating the substrate at a first temperature after vapor phase decomposition, heating the substrate at a second temperature higher than the first temperature after heating at the first temperature, to remove a silicon compound deposited on the surface of the silicon-containing film, dropping a recovery solution onto the substrate surface after heating at the second temperature and moving the substrate surface, to recover metal into the recovery solution, and drying the recovery solution, to perform X-ray fluorescence spectrometry on a dried mark.

Abstract: A cleanliness measuring carriage includes a cleanliness measuring device for measuring cleanliness within a semiconductor manufacturing room, a holding unit for holding the cleanliness measuring device, and a conveying unit for conveying the cleanliness measuring device along a substrate container transport lane.

Abstract: A sample contamination method according to an embodiment includes spraying a chemical solution containing contaminants into a casing, carrying a semiconductor substrate into the casing filled with the chemical solution by the spraying, leaving the semiconductor substrate in the casing filled with the chemical solution for a predetermined time, and carrying the semiconductor substrate out of the casing after the predetermined time passes.

Abstract: According to one embodiment, an impurity analysis method comprises performing vapor-phase decomposition on a silicon-containing film formed on a substrate, heating the substrate at a first temperature after vapor phase decomposition, heating the substrate at a second temperature higher than the first temperature after heating at the first temperature, to remove a silicon compound deposited on the surface of the silicon-containing film, dropping a recovery solution onto the substrate surface after heating at the second temperature and moving the substrate surface, to recover metal into the recovery solution, and drying the recovery solution, to perform X-ray fluorescence spectrometry on a dried mark.

Abstract: A sample contamination method according to an embodiment includes spraying a chemical solution containing contaminants into a casing, carrying a semiconductor substrate into the casing filled with the chemical solution by the spraying, leaving the semiconductor substrate in the casing filled with the chemical solution for a predetermined time, and carrying the semiconductor substrate out of the casing after the predetermined time passes.

Abstract: A method for manufacturing an electronic device using a closed-type transport container, includes: controlling relative humidity inside the closed-type transport container to be lower than ambient relative humidity outside the closed-type transport container on a particular interprocess transport path in which an intermediate product stored in the closed-type transport container is transported from a first manufacturing process to a second manufacturing process. The first manufacturing process allows basic compounds containing nitrogen atoms to be released from the intermediate product. The second manufacturing process is susceptible to degradation due to contamination by the basic compounds.

Abstract: Embodiments disclose a method for cleaning a mask having a mask film that is of a surface to which a foreign substance containing silicon oxide adheres. In the method, the mask is retained in a cleaning gas containing diluted hydrofluoric acid vapor at a temperature at which an etching rate to the foreign substance becomes higher than an etching rate to the mask film. Further, in the method, the cleaning gas is supplied to the surface of the mask to etch the foreign substance.

Abstract: The method of cleaning a mask of an embodiment includes irradiating a mask film having a mask pattern on a substrate with an energy radiation and heightening a temperature of the mask film than that of the substrate.

Abstract: According to one embodiment, a semiconductor device fabrication mask comprises a light-transmitting substrate, and a semi-light-shielding pattern and a light-shielding pattern formed on portions of the light-transmitting substrate, wherein the concentration of an S-containing material is 0.4% or less within the range of a depth of 1 nm from the exposed surface of the light-transmitting substrate, the surface of the semi-light-shielding pattern, and the surface of the light-shielding pattern.

Abstract: An immersion lithography apparatus includes: a projection optical system which projects a pattern of a mask onto a substrate; a substrate cleaning unit which cleans the substrate prior to projection of the pattern; a liquid supply mechanism which supplies the same liquid to an immersion region between the projection optical system and the substrate and to the substrate cleaning unit; a first liquid discharge path through which the liquid discharged from the immersion region is passed; and a second liquid discharge path through which the liquid discharged from the substrate cleaning unit is passed.

Abstract: An immersion lithography apparatus includes: a projection optical system which projects a pattern of a mask onto a substrate; a substrate cleaning unit which cleans the substrate prior to projection of the pattern; a liquid supply mechanism which supplies the same liquid to an immersion region between the projection optical system and the substrate and to the substrate cleaning unit; a first liquid discharge path through which the liquid discharged from the immersion region is passed; and a second liquid discharge path through which the liquid discharged from the substrate cleaning unit is passed.

Abstract: A method for manufacturing an electronic device using a closed-type transport container, includes: controlling relative humidity inside the closed-type transport container to be lower than ambient relative humidity outside the closed-type transport container on a particular interprocess transport path in which an intermediate product stored in the closed-type transport container is transported from a first manufacturing process to a second manufacturing process. The first manufacturing process allows basic compounds containing nitrogen atoms to be released from the intermediate product. The second manufacturing process is susceptible to degradation due to contamination by the basic compounds.

Abstract: A local clean robot-transport plant includes: a plurality of manufacturing apparatuses; a plurality of closed-type transport containers; a container discrimination/selection apparatus; an apparatus group control server. Each of the plurality of closed-type transport containers stores and transports an intermediate product of manufacturing processes along a plurality of interprocess transport paths defined among the plurality of manufacturing apparatuses in accordance with a flow of the manufacturing processes. The container discrimination/selection apparatus is configured to discriminate and select the closed-type transport container of transport type 1 and the closed-type transport container of transport type 2, respectively, from among the plurality of closed-type transport containers.

Abstract: According to an aspect of the invention, there is provided an exposure apparatus including a chemical filter disposed in an air conditioning system to reduce a concentration of impurities in a gas, an optical component arranged to be exposed to the gas on a downstream side of the chemical filter, an irradiation section which irradiates the optical component with light of a wavelength equal to that of light for an exposure process, and a measurement section which measures a transmittance of the light applied from the irradiation section and transmitted through the optical component.

Abstract: A method of manufacturing a semiconductor device includes subjecting a semiconductor wafer, which includes a copper layer formed above a semiconductor substrate and covered with an insulating film, to a dry etching using a fluorocarbon gas to partially remove the insulating film, thereby at least partially exposing a surface of the copper layer. The copper layer, the surface of which is at least partially exposed is subjected to a nitrogen plasma treatment. The semiconductor wafer having the nitrogen plasma-treated copper layer is exposed to atmosphere, and then the semiconductor wafer is subjected to a surface treatment.

Abstract: According to the present invention, there is provided an air impurity measurement apparatus having, a collector which collects an impurity in the air into pure water; a divider which divides a collecting liquid obtained by said collector into at least two portions; an oxidizer addition unit which adds an oxidizer to at least one of divided collecting liquids obtained by said divider; and an analyzer which analyzes at least one of the collecting liquid to which the oxidizer is added and the collecting liquid to which the oxidizer is not added.

Abstract: A method of manufacturing a semiconductor device includes subjecting a semiconductor wafer, which includes a copper layer formed above a semiconductor substrate and covered with an insulating film, to a dry etching using a fluorocarbon gas to partially remove the insulating film, thereby at least partially exposing a surface of the copper layer. The copper layer, the surface of which is at least partially exposed is subjected to a nitrogen plasma treatment. The semiconductor wafer having the nitrogen plasma-treated copper layer is exposed to atmosphere, and then the semiconductor wafer is subjected to a surface treatment.

Abstract: A method of maintaining cleanliness of substrates including a first step for accommodating at least a piece of substrate having a gaseous impurity-trapping filter arranged close thereto in a hermetically sealed box, and a second step for circulating the atmosphere in the box at a rate of two or more times a minute so that impurities in the atmosphere are adsorbed by the gaseous impurity-trapping filter. A box for accommodating substrates includes a housing in which space for accommodating the substrates is hermetically closed with a lid, a gaseous impurity-trapping filter arranged in the housing and adapted to adsorb impurities contained in the atmosphere in space, and an atmosphere-circulating device having a ratio of the circulating capacity to the space volume of not smaller than 2 in order to circulate the atmosphere so as to pass it through the gaseous impurity-trapping filter.