Patents by Inventor Makoto Higashihira

Makoto Higashihira has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having super junction structure with varying width
    Patent number: 11456378
    Abstract: The disclosure reduces the risk of collapse of the wall surrounding the trench and suppresses the withstand voltage fluctuation that accompanies the manufacturing variation for a semiconductor device having a super junction structure. The semiconductor device includes a drift layer of a first conductivity type and a plurality of embedded parts embedded in the drift layer. The embedded parts are of a second conductivity type different from the first conductivity type, and the embedded parts are arranged with a first direction as a longitudinal direction and spaced from each other along a second direction that intersects the first direction. A width of each of the embedded parts in the second direction changes continuously along the first direction.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: September 27, 2022
    Assignee: LAPIS Semiconductor Co., Ltd.
    Inventors: Toshiyuki Orita, Tomomi Yamanobe, Makoto Higashihira, Yuuki Doi, Toshifumi Kobe, Masao Tsujimoto, Takao Kaji, Kiyofumi Kondou
  • SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
    Publication number: 20220302046
    Abstract: There is provided a semiconductor device including: a circuit region formed on one surface of a semiconductor substrate; a connection portion disposed at the one surface, the connection portion covering the circuit region, being electrically connected to the circuit region, and being used to connect with an exterior device; an annular wire formed at the one surface so as to surround the circuit region; a first protective film covering the annular wire, the first protective film being formed between the connection portion and a peripheral edge portion of the semiconductor substrate; and a second protective film formed at a predetermined partial region on the connection portion.
    Type: Application
    Filed: March 15, 2022
    Publication date: September 22, 2022
    Inventors: KIYOFUMI KONDO, MAMORU ISHIKIRIYAMA, TAKUMI INOUE, KAZUTAKA KODAMA, TOSHIFUMI KOBE, YUZO YAMAMOTO, TOSHIYUKI ORITA, MAKOTO HIGASHIHIRA
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    Publication number: 20190189800
    Abstract: The disclosure reduces the risk of collapse of the wall surrounding the trench and suppresses the withstand voltage fluctuation that accompanies the manufacturing variation for a semiconductor device having a super junction structure. The semiconductor device includes a drift layer of a first conductivity type and a plurality of embedded parts embedded in the drift layer. The embedded parts are of a second conductivity type different from the first conductivity type, and the embedded parts are arranged with a first direction as a longitudinal direction and spaced from each other along a second direction that intersects the first direction. A width of each of the embedded parts in the second direction changes continuously along the first direction.
    Type: Application
    Filed: December 19, 2018
    Publication date: June 20, 2019
    Applicant: LAPIS Semiconductor Co., Ltd.
    Inventors: Toshiyuki Orita, Tomomi Yamanobe, Makoto Higashihira, Yuuki Doi, Toshifumi Kobe, Masao Tsujimoto, Takao Kaji, Kiyofumi Kondou