Abstract: To provide an optical 90-degree hybrid formed of a silicon waveguide capable of suppressing an optical loss and a phase error, and facilitating electronic packaging and optical packaging. In the optical 90-degree hybrid circuit including two optical branching units facing each other and two optical coupling units facing away from each other, four arm waveguides are arranged including bent waveguides each of which guides an output light of the optical branching unit to the optical coupling unit, and is formed in a curved shape.

Abstract: A solid-state imaging apparatus includes a pixel circuit, a detection and selection circuit, and an AD conversion circuit. The pixel circuit outputs a plurality of pixel signals corresponding to mutually different gains or sensitivities. The detection and selection circuit compares one or more of the plurality of pixel signals with a reference value to generate a signal selection signal that instructs selection of a pixel signal among the plurality of pixel signals. The detection and selection circuit includes a sample and hold circuit that holds the plurality of pixel signals, and selects at least one pixel signal among the plurality of pixel signals held in the sample and hold circuit based on the signal selection signal. The detection and selection circuit is arranged in a stage before the AD conversion circuit that AD converts the at least one pixel signal selected.

Abstract: A solid-state imaging device includes: a photoelectric conversion element that is disposed on a semiconductor substrate and generates signal charges by photoelectric conversion; a first diffusion layer that holds signal charges transferred from the photoelectric conversion element; a capacitive element that holds signal charges overflowing from the photoelectric conversion element; an amplifier transistor that outputs a signal according to the signal charges in the first diffusion layer; a first contact that is connected to the first diffusion layer; a second contact that is connected to a gate of the amplifier transistor; and a first wire that connects the first contact and the second contact. A shortest distance between the semiconductor substrate and the first wire is less than a shortest distance between the semiconductor substrate and the capacitive element.

Abstract: A solid-state imaging apparatus includes a pixel circuit that outputs a pixel signal and a negative feedback circuit. The negative feedback circuit includes a sample and hold circuit (hereinafter “SH circuit”) that samples and holds the pixel signal, and a feedback amplifier that negatively feeds back, to the SH circuit, a feedback signal according to a difference between the pixel signal from the pixel circuit and an output signal from the SH circuit.

Abstract: A solid-state imaging apparatus includes pixel cells arranged in a matrix. Each pixel cell includes: a first photodiode that accumulates a signal charge generated by photoelectric conversion; a second photodiode that functions as a first holder that holds a signal charge that overflows from the first photodiode; a second holder; and a first transfer transistor that transfers the signal charge held in the second photodiode to the second holder.

Abstract: A solid-state imaging apparatus includes a pixel circuit and a negative feedback circuit. The pixel circuit includes: a photodiode; a charge storage that holds a signal charge generated by the photodiode; an amplification transistor that outputs a pixel signal corresponding to the signal charge in the charge storage; a first reset transistor that resets the charge storage; a first storage capacitive element for holding a signal charge; and a first transistor that controls the connection between the charge storage and the first storage capacitive element. The negative feedback circuit negatively feeds back a feedback signal corresponding to a reset output of the amplification transistor to the charge storage via the first reset transistor.

Abstract: A solid-state imaging device includes: a photoelectric conversion element that is disposed on a semiconductor substrate and generates signal charges by photoelectric conversion; a first diffusion layer that holds signal charges transferred from the photoelectric conversion element; a capacitive element that holds signal charges overflowing from the photoelectric conversion element; an amplifier transistor that outputs a signal according to the signal charges in the first diffusion layer; a first contact that is connected to the first diffusion layer; a second contact that is connected to a gate of the amplifier transistor; and a first wire that connects the first contact and the second contact. A shortest distance between the semiconductor substrate and the first wire is less than a shortest distance between the semiconductor substrate and the capacitive element.

Abstract: A solid-state imaging apparatus includes pixel cells arranged in a matrix. Each pixel cell includes: a first photodiode that accumulates a signal charge generated by photoelectric conversion; a second photodiode that functions as a first holder that holds a signal charge that overflows from the first photodiode; a second holder; and a first transfer transistor that transfers the signal charge held in the second photodiode to the second holder.

Abstract: A solid-state imaging apparatus includes: an overflow element group that accumulates a signal charge that overflows from a photodiode; and a floating diffusion layer that selectively holds a signal charge transferred from the photodiode and a signal charge transferred from the overflow element group. The overflow element group includes m groups (m?2) connected in series in stages, each group including an overflow element and a storage capacitive element. An overflow element among the groups transfers, to the storage capacitive element included in the same group as the overflow element, a signal charge that overflows from the photodiode or a signal charge from an upstream storage capacitive element among the groups.

Abstract: A solid-state imaging apparatus includes a plurality of high-sensitivity pixels that are arranged in a matrix, and perform a photoelectric conversion at a predetermined sensitivity; a plurality of low-sensitivity pixels that are arranged in a matrix in gaps between the plurality of high-sensitivity pixels, and perform a photoelectric conversion at a lower sensitivity than the predetermined sensitivity; and a signal processor that generates a pixel signal by (i) detecting a difference signal between a signal from the plurality of high-sensitivity pixels and a signal from the plurality of low-sensitivity pixels, and (ii) correcting the signal from the plurality of high-sensitivity pixels using the difference signal.

Abstract: A solid-state imaging device includes: a pixel including a photoelectric converter that generates a charge and a charge accumulator that converts the charge into a voltage; a controller that causes the pixel to perform exposure in a first exposure mode and convert the charge into the voltage with a first gain to output a first pixel signal, and causes the pixel to perform exposure in a second exposure mode and convert the charge into the voltage with a second gain to output a second pixel signal, the second exposure mode being shorter in exposure time than the first exposure mode, and the second gain being lower than the first gain; and a signal processor that synthesizes the second pixel signal after amplification and the first pixel signal.

Abstract: A solid-state imaging device includes: a pixel array unit in which a plurality of pixels are arranged in rows and columns; a plurality of column signal lines which are provided in one-to-one correspondence with pixel columns; a column processor including a plurality of column AD circuits provided in one-to-one correspondence with the plurality of column signal lines; a power supply variation detector which is connected to a power supply wire through which a power supply voltage is transmitted to each of the pixels, and which detects, in correspondence with pixel rows, power supply variation components attributed to variations in the power supply voltage; and a power supply variation corrector which corrects, for each of the pixel rows, a pixel signal detected by the column processor, using the power supply variation components detected by the power supply variation detector.

Abstract: A solid-state imaging apparatus includes a pixel array, a column processor, and a test signal generating circuit that generates a first digital signal for testing purposes. The test signal generating circuit generates the first digital signal within one horizontal scanning period. The column processor converts a first analog signal, that is converted from the first digital signal, to a second digital signal within the one horizontal scanning period.

Abstract: A solid-state imaging apparatus includes a plurality of high-sensitivity pixels that are arranged in a matrix, and perform a photoelectric conversion at a predetermined sensitivity; a plurality of low-sensitivity pixels that are arranged in a matrix in gaps between the plurality of high-sensitivity pixels, and perform a photoelectric conversion at a lower sensitivity than the predetermined sensitivity; and a signal processor that generates a pixel signal by (i) detecting a difference signal between a signal from the plurality of high-sensitivity pixels and a signal from the plurality of low-sensitivity pixels, and (ii) correcting the signal from the plurality of high-sensitivity pixels using the difference signal.

Abstract: A solid-state imaging apparatus includes a pixel array, a column processor, and a test signal generating circuit that generates a first digital signal for testing purposes. The test signal generating circuit generates the first digital signal within one horizontal scanning period. The column processor converts a first analog signal, that is converted from the first digital signal, to a second digital signal within the one horizontal scanning period.

Abstract: A solid-state imaging device includes: a pixel array including a plurality of pixel circuits arranged in rows and columns; a vertical signal line that is provided for each of the columns and transmits pixel signals; a column AD circuit that is provided for each of the columns and AD converts the pixel signals from the vertical signal line; a column-switching circuit that is interposed in the vertical signal line between the pixel array and the column AD circuit and switches connection between the vertical signal line and the column AD circuit; a controller that causes the column-switching circuit to switch the connection for every horizontal scan period; and a restoration circuit that restores ordering of the AD converted signals so as to correspond to ordering in which the vertical signal lines are arranged in the pixel array.

Abstract: A solid-state imaging device includes: a pixel including a photoelectric converter that generates a charge and a charge accumulator that converts the charge into a voltage; a controller that causes the pixel to perform exposure in a first exposure mode and convert the charge into the voltage with a first gain to output a first pixel signal, and causes the pixel to perform exposure in a second exposure mode and convert the charge into the voltage with a second gain to output a second pixel signal, the second exposure mode being shorter in exposure time than the first exposure mode, and the second gain being lower than the first gain; and a signal processor that synthesizes the second pixel signal after amplification and the first pixel signal.

Abstract: A solid-state imaging device includes: a pixel array unit in which a plurality of pixels are arranged in rows and columns; a plurality of column signal lines which are provided in one-to-one correspondence with pixel columns; a column processor including a plurality of column AD circuits provided in one-to-one correspondence with the plurality of column signal lines; a power supply variation detector which is connected to a power supply wire through which a power supply voltage is transmitted to each of the pixels, and which detects, in correspondence with pixel rows, power supply variation components attributed to variations in the power supply voltage; and a power supply variation corrector which corrects, for each of the pixel rows, a pixel signal detected by the column processor, using the power supply variation components detected by the power supply variation detector.

Abstract: A solid-state imaging device includes: a plurality of pixel circuits arranged in rows and columns; a plurality of unit power supply circuits that generate a second power supply voltage from a first power supply voltage based on a reference voltage and supply the second power supply voltage to amplifier transistors provided in the plurality of pixel circuits; and a regulator circuit that generates the reference voltage that is constant. Each of the unit power supply circuits is provided for a corresponding one of the columns of the plurality of pixel circuits or for a corresponding one of the pixel circuits, and supplies the second power supply voltage to the amplifier transistors in the pixel circuits that belong to the corresponding one of the columns or to the amplifier transistor in the corresponding one of the pixel circuits.

Abstract: A solid-state imaging device includes: a plurality of pixel circuits arranged in rows and columns; a plurality of unit power supply circuits that generate a second power supply voltage from a first power supply voltage based on a reference voltage and supply the second power supply voltage to amplifier transistors provided in the plurality of pixel circuits; and a regulator circuit that generates the reference voltage that is constant. Each of the unit power supply circuits is provided for a corresponding one of the columns of the plurality of pixel circuits or for a corresponding one of the pixel circuits, and supplies the second power supply voltage to the amplifier transistors in the pixel circuits that belong to the corresponding one of the columns or to the amplifier transistor in the corresponding one of the pixel circuits.