Patents by Inventor Makoto Kasu
Makoto Kasu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10460934Abstract: According to an aspect of a present inventive subject matter, a crystalline film includes a crystalline metal oxide as a major component, the crystalline film includes a corundum structure, a surface area that is 9 ?m2 or more, and a dislocation density that is less than 5×106 cm?2.Type: GrantFiled: August 21, 2018Date of Patent: October 29, 2019Assignees: FLOSFIA INC., NATIONAL INSTITUTE FOR MATERIALS SCIENCE, KYOTO UNIVERSITY, SAGA UNIVERSITYInventors: Yuichi Oshima, Shizuo Fujita, Kentaro Kaneko, Makoto Kasu, Katsuaki Kawara, Takashi Shinohe, Tokiyoshi Matsuda, Toshimi Hitora
-
Publication number: 20190057865Abstract: According to an aspect of a present inventive subject matter, a crystalline film includes a crystalline metal oxide as a major component, the crystalline film includes a corundum structure, a surface area that is 9 ?m2 or more, and a dislocation density that is less than 5×106cm?2.Type: ApplicationFiled: August 21, 2018Publication date: February 21, 2019Inventors: Yuichi OSHIMA, Shizuo FUJITA, Kentaro KANEKO, Makoto KASU, Katsuaki KAWARA, Takashi SHINOHE, Tokiyoshi MATSUDA, Toshimi HITORA
-
Publication number: 20190055667Abstract: According to an aspect of a present inventive subject matter, a method for producing a crystalline film includes; gasifying a metal source containing a metal to turn the metal source into a metal-containing raw-material gas; supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto a substrate including a buffer layer; and supplying a reactive gas into the reaction chamber onto the substrate to form a crystalline film on the substrate under a gas flow of the reactive gas.Type: ApplicationFiled: August 21, 2018Publication date: February 21, 2019Inventors: Yuichi OSHIMA, Shizuo FUJITA, Kentaro KANEKO, Makoto KASU, Katsuaki KAWARA, Takashi SHINOHE, Tokiyoshi MATSUDA, Toshimi HITORA
-
Publication number: 20190057866Abstract: According to an aspect of a present inventive subject matter, a crystal includes: a corundum-structured oxide semiconductor as a major component, the corundum-structured oxide semiconductor including gallium and/or indium and doped with a dopant including germanium; a principal plane; a carrier concentration that is 1×1018/cm3 or more; and an electron mobility that is 20 cm2/Vs or more.Type: ApplicationFiled: August 21, 2018Publication date: February 21, 2019Inventors: Yuichi OSHIMA, Shizuo FUJITA, Kentaro KANEKO, Makoto KASU, Katsuaki KAWARA, Takashi SHINOHE, Tokiyoshi MATSUDA, Toshimi HITORA
-
Patent number: 8486816Abstract: An integrated optical waveguide has a first optical waveguide, a second optical waveguide, and a groove. The second optical waveguide is coupled to the first optical waveguide and has a refractive index that is different from the first optical waveguide. The groove is disposed so as to traverse an optical path of the first optical waveguide and is separated from an interface between the first optical waveguide and the second optical waveguide by a predetermined spacing. The spacing from the interface and the width of the groove are determined such that reflection at a boundary between the first optical waveguide and the second optical waveguide is weakened. A semiconductor board may be disposed at a boundary between the first optical waveguide and the second optical waveguide.Type: GrantFiled: November 30, 2010Date of Patent: July 16, 2013Assignee: Nippon Telegraph and Telephone CorporationInventors: Makoto Kasu, Toshiki Makimoto, Kenji Ueda, Yoshiharu Yamauchi
-
Patent number: 8487319Abstract: An integrated optical waveguide has a first optical waveguide, a second optical waveguide, and a groove. The second optical waveguide is coupled to the first optical waveguide and has a refractive index that is different from the first optical waveguide. The groove is disposed so as to traverse an optical path of the first optical waveguide and is separated from an interface between the first optical waveguide and the second optical waveguide by a predetermined spacing. The spacing from the interface and the width of the groove are determined such that reflection at a boundary between the first optical waveguide and the second optical waveguide is weakened. A semiconductor board may be disposed at a boundary between the first optical waveguide and the second optical waveguide.Type: GrantFiled: November 30, 2010Date of Patent: July 16, 2013Assignee: Nippon Telegraph and Telephone CorporationInventors: Makoto Kasu, Toshiki Makimoto, Kenji Ueda, Yoshiharu Yamauchi
-
Patent number: 8328936Abstract: A process of producing a diamond thin-film includes implanting dopant into a diamond by an ion implantation technique, forming a protective layer on at least part of the surface of the ion-implanted diamond, and firing the protected ion-implanted diamond at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C. A process of producing a diamond semiconductor includes implanting dopant into each of two diamonds by an ion implantation technique and superimposing the two ion-implanted diamonds on each other such that at least part of the surfaces of each of the ion-implanted diamonds makes contact with each other, and firing the ion implanted diamonds at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C.Type: GrantFiled: October 18, 2011Date of Patent: December 11, 2012Assignee: Nippon Telegraph and Telephone CorporationInventors: Makoto Kasu, Toshiki Makimoto, Kenji Ueda, Yoshiharu Yamauchi
-
Patent number: 8242511Abstract: In a conventional diamond semiconductor element, because of high density of crystal defects, it is impossible to reflect the natural physical properties peculiar to a diamond, such as high thermal conductivity, high breakdown field strength, high-frequency characteristics and the like, in the transistor characteristics. By slightly shifting surface orientation of a diamond substrate in a [001] direction, a significant reduction in crystal defects peculiar to a diamond is possible. The equivalent effects are also provided by shifting surface orientation of a single-crystal diamond thin-film or channel slightly from a [001] direction. It is possible to obtain a significantly high transconductance gm as compared with that in a transistor produced using conventional surface orientation.Type: GrantFiled: June 20, 2006Date of Patent: August 14, 2012Assignee: Nippon Telegraph and Telephone CorporationInventors: Makoto Kasu, Toshiki Makimoto, Kenji Ueda, Yoshiharu Yamauchi
-
Patent number: 8221548Abstract: A process for producing a diamond thin-film includes forming a diamond crystal thin-film on a substrate and firing the diamond crystal thin-film at a sufficient temperature under high pressure under which a diamond is stable. A diamond single-crystal substrate having a diamond single-crystal thin-film formed thereon is placed in an ultra-high-pressure and high-temperature firing furnace to anneal the diamond single-crystal thin-film under the conditions of 1200° C. and 6 GPa.Type: GrantFiled: January 31, 2008Date of Patent: July 17, 2012Assignee: Nippon Telegraph and Telephone CorporationInventors: Makoto Kasu, Toshiki Makimoto, Kenji Ueda, Yoshiharu Yamauchi
-
Publication number: 20120034737Abstract: A process of producing a diamond thin-film includes implanting dopant into a diamond by an ion implantation technique, forming a protective layer on at least part of the surface of the ion-implanted diamond, and firing the protected ion-implanted diamond at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C. A process of producing a diamond semiconductor includes implanting dopant into each of two diamonds by an ion implantation technique and superimposing the two ion-implanted diamonds on each other such that at least part of the surfaces of each of the ion-implanted diamonds makes contact with each other, and firing the ion implanted diamonds at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C.Type: ApplicationFiled: October 18, 2011Publication date: February 9, 2012Applicant: Nippon Telegraph and Telephone CorporationInventors: Makoto Kasu, Toshiki Makimoto, Kenji Ueda, Yoshiharu Yamauchi
-
Patent number: 7973339Abstract: An integrated optical waveguide has a first optical waveguide, a second optical waveguide, and a groove. The second optical waveguide is coupled to the first optical waveguide and has a refractive index that is different from the first optical waveguide. The groove is disposed so as to traverse an optical path of the first optical waveguide and is separated from an interface between the first optical waveguide and the second optical waveguide by a predetermined spacing. The spacing from the interface and the width of the groove are determined such that reflection at a boundary between the first optical waveguide and the second optical waveguide is weakened. A semiconductor board may be disposed at a boundary between the first optical waveguide and the second optical waveguide.Type: GrantFiled: March 24, 2008Date of Patent: July 5, 2011Assignee: Nippon Telegraph and Telephone CorporationInventors: Makoto Kasu, Toshiki Makimoto, Kenji Ueda, Yoshiharu Yamauchi
-
Publication number: 20110068352Abstract: An integrated optical waveguide has a first optical waveguide, a second optical waveguide, and a groove. The second optical waveguide is coupled to the first optical waveguide and has a refractive index that is different from the first optical waveguide. The groove is disposed so as to traverse an optical path of the first optical waveguide and is separated from an interface between the first optical waveguide and the second optical waveguide by a predetermined spacing. The spacing from the interface and the width of the groove are determined such that reflection at a boundary between the first optical waveguide and the second optical waveguide is weakened. A semiconductor board may be disposed at a boundary between the first optical waveguide and the second optical waveguide.Type: ApplicationFiled: November 30, 2010Publication date: March 24, 2011Applicant: Nippon Telegraph and Telephone CorporationInventors: Makoto Kasu, Toshiki Makimoto, Kenji Ueda, Yoshiharu Yamauchi
-
Publication number: 20110070694Abstract: An integrated optical waveguide has a first optical waveguide, a second optical waveguide, and a groove. The second optical waveguide is coupled to the first optical waveguide and has a refractive index that is different from the first optical waveguide. The groove is disposed so as to traverse an optical path of the first optical waveguide and is separated from an interface between the first optical waveguide and the second optical waveguide by a predetermined spacing. The spacing from the interface and the width of the groove are determined such that reflection at a boundary between the first optical waveguide and the second optical waveguide is weakened. A semiconductor board may be disposed at a boundary between the first optical waveguide and the second optical waveguide.Type: ApplicationFiled: November 30, 2010Publication date: March 24, 2011Applicant: Nippon Telegraph and Telephone CorporationInventors: Makoto Kasu, Toshiki Makimoto, Kenji Ueda, Yoshiharu Yamauchi
-
Publication number: 20100289030Abstract: In a conventional diamond semiconductor element, because of high density of crystal defects, it is impossible to reflect the natural physical properties peculiar to a diamond, such as high thermal conductivity, high breakdown field strength, high-frequency characteristics and the like, in the transistor characteristics. By slightly shifting surface orientation of a diamond substrate in a [001] direction, a significant reduction in crystal defects peculiar to a diamond is possible. The equivalent effects are also provided by shifting surface orientation of a single-crystal diamond thin-film or channel slightly from a [001] direction. It is possible to obtain a significantly high transconductance gm as compared with that in a transistor produced using conventional surface orientation.Type: ApplicationFiled: June 20, 2006Publication date: November 18, 2010Applicant: Nippon Telegraph and Telephone CorporationInventors: Makoto Kasu, Toshiki Makimoto, Kenji Ueda, Yoshiharu Yamauchi
-
Publication number: 20090261347Abstract: In a conventional diamond semiconductor element, because of high density of crystal defects, it is impossible to reflect the natural physical properties peculiar to a diamond, such as high thermal conductivity, high breakdown field strength, high-frequency characteristics and the like, in the transistor characteristics. By slightly shifting surface orientation of a diamond substrate in a [001] direction, a significant reduction in crystal defects peculiar to a diamond is possible. The equivalent effects are also provided by shifting surface orientation of a single-crystal diamond thin-film or channel slightly from a [001] direction. It is possible to obtain a significantly high transconductance gm as compared with that in a transistor produced using conventional surface orientation.Type: ApplicationFiled: June 20, 2006Publication date: October 22, 2009Applicant: Nippon Telegraph and Telephone CorporationInventors: Makoto Kasu, Toshiki Makimoto, Kenji Ueda, Yoshiharu Yamauchi
-
Publication number: 20080217626Abstract: An integrated optical waveguide has a first optical waveguide, a second optical waveguide, and a groove. The second optical waveguide is coupled to the first optical waveguide and has a refractive index that is different from the first optical waveguide. The groove is disposed so as to traverse an optical path of the first optical waveguide and is separated from an interface between the first optical waveguide and the second optical waveguide by a predetermined spacing. The spacing from the interface and the width of the groove are determined such that reflection at a boundary between the first optical waveguide and the second optical waveguide is weakened. A semiconductor board may be disposed at a boundary between the first optical waveguide and the second optical waveguide.Type: ApplicationFiled: March 24, 2008Publication date: September 11, 2008Applicant: Nippon Telegraph and Telephone CorporationInventors: Makoto Kasu, Toshiki Makimoto, Kenji Ueda, Yoshiharu Yamauchi
-
Publication number: 20080134960Abstract: An integrated optical waveguide has a first optical waveguide, a second optical waveguide, and a groove. The second optical waveguide is coupled to the first optical waveguide and has a refractive index that is different from the first optical waveguide. The groove is disposed so as to traverse an optical path of the first optical waveguide and is separated from an interface between the first optical waveguide and the second optical waveguide by a predetermined spacing. The spacing from the interface and the width of the groove are determined such that reflection at a boundary between the first optical waveguide and the second optical waveguide is weakened. A semiconductor board may be disposed at a boundary between the first optical waveguide and the second optical waveguide.Type: ApplicationFiled: January 31, 2008Publication date: June 12, 2008Applicant: Nippon Telegraph and Telephone CorporationInventors: Makoto Kasu, Toshiki Makimoto, Kenji Ueda, Yoshiharu Yamauchi
-
Publication number: 20080134959Abstract: An integrated optical waveguide has a first optical waveguide, a second optical waveguide, and a groove. The second optical waveguide is coupled to the first optical waveguide and has a refractive index that is different from the first optical waveguide. The groove is disposed so as to traverse an optical path of the first optical waveguide and is separated from an interface between the first optical waveguide and the second optical waveguide by a predetermined spacing. The spacing from the interface and the width of the groove are determined such that reflection at a boundary between the first optical waveguide and the second optical waveguide is weakened. A semiconductor board may be disposed at a boundary between the first optical waveguide and the second optical waveguide.Type: ApplicationFiled: January 31, 2008Publication date: June 12, 2008Applicant: Nippon Telegraph and Telephone CorporationInventors: Makoto Kasu, Toshiki Makimoto, Kenji Ueda, Yoshiharu Yamauchi