Abstract: The process for producing an amorphous carbon film of the present invention is a process for producing an amorphous carbon film comprising contacting a surface of a substrate S with bubbles B which have been formed in a liquid L containing an organic compound and inside which plasma has been generated, so as to form an amorphous carbon film on the surface of the substrate S, and the liquid L contains one or more selected from phenols and alcohols having a carbon number of from 1 to 12. According to the present invention, a hard amorphous carbon film can be formed easily.

Abstract: The process for producing an amorphous carbon film of the present invention is a process for producing an amorphous carbon film comprising contacting a surface of a substrate S with bubbles B which have been formed in a liquid L containing an organic compound and inside which plasma has been generated, so as to form an amorphous carbon film on the surface of the substrate S, and the liquid L contains one or more selected from phenols and alcohols having a carbon number of from 1 to 12. According to the present invention, a hard amorphous carbon film can be formed easily.

Abstract: In the apparatus according to the present invention, self-weight of a single crystal is moved in soft manner when the single crystal being pulled up is gripped by grippers, and driving of pulling operation after self-weight movement is performed by a single driving source, and it is aimed to prevent contamination and dislocation of the single crystal by arranging all driving units outside a vacuum chamber for storing the single crystal. There is provided a support member 70 for supporting a portion with larger diameter 5 under a seed crystal 3, and the support member 70 is provided with a through-hole, which is communicated with outer peripheral portion via a slit 74, and it can be rotated in horizontal direction between a non-holding position and a holding position by the motor 40.

Abstract: The object of the present invention is to prevent the single crystal during pulling operation from turning to polycrystal when the single crystal under pulling operation is gripped by a gripper and to achieve the gripping automatically. When a wire 1 is moved down to immerse a seed crystal 3 into surface of a Si melt 11 in a quartz crucible 10, arms 12 and 13 wait at such positions that tips do not come into contact with the Si melt 11, and tips of the gripping arm 12 are opened so that the tips are not brought into contact with a portion with larger diameter 5 during pulling operation. By pulling up the wire 1, a neck portion 4, a portion with larger diameter 5, a constricted portion 6, and a crystal main portion 7 are formed under the seed crystal 3. When a sensor 14 detects that upper surface of the portion with larger diameter 5 has come into contact with the tips of the contact/detecting arm 13 during pulling operation, tips of the gripping arm 12 are closed and grip the constricted portion 6.

Abstract: An apparatus for heating polycrystalline silicon, in which polycrystalline silicon of semiconductor grade placed in the reaction vessel is directly heated by means of a heater outside of the reaction vessel where the inner surface of the reaction vessel is formed of graphite coated with highly pure silicon and having a thickness of 100 microns or more.