Patents by Inventor Makoto Kuwahara
Makoto Kuwahara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11939977Abstract: A scroll compressor comprising a fixed scroll (15); an orbiting scroll (16) supported in a manner allowing for orbiting motion; a discharge port through which a fluid compressed by the two scrolls (15, 16) is discharged; an end plate step portion (16E) provided on an end plate of the orbiting scroll (16) formed so that a height of the end plate is higher on a center portion side in the direction of a spiral wrap and lower on an outer end side; and a wrap step portion (15E) provided on a wall portion of the fixed scroll (15) that corresponds to the end plate step portion (16E) so that a height of the wall portion is lower on the center portion side of the spiral and higher on the outer end side; wherein the orbiting scroll (16) is treated for surface hardening and the fixed scroll (15) is not treated for surface hardening.Type: GrantFiled: January 27, 2021Date of Patent: March 26, 2024Assignee: MITSUBISHI HEAVY INDUSTRIES THERMAL SYSTEMS, LTD.Inventors: Hajime Sato, Makoto Takeuchi, Genta Yoshikawa, Kazuhide Watanabe, Katsuhiro Fujita, Takayuki Hagita, Takayuki Kuwahara
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Publication number: 20240068472Abstract: The purpose of the present invention is to suppress noise caused by contact between a depression and a ring. Provided is an electric compressor comprising: a housing that forms an outer shell; a fixed scroll that is housed in the housing and fixed on the housing side; a turning scroll that meshes with the fixed scroll and turns with respect to the fixed scroll; an autorotation inhibiting mechanism (30) that inhibits autorotation of the turning scroll; and a lubricant supply unit that supplies a lubricant to the autorotation inhibiting mechanism (30). The autorotation inhibiting mechanism (30) has: a ring hole (32) which is formed in the turning scroll; a ring (33) which is disposed in the ring hole (32), and the outer circumferential surface (33b) of which faces the inner circumferential surface 32a of the ring hole (32); and a pin (34) which is provided to the housing and which engages with the inner circumferential surface (33a) of the ring (33).Type: ApplicationFiled: January 17, 2022Publication date: February 29, 2024Applicant: MITSUBISHI HEAVY INDUSTRIES THERMAL SYSTEMS, LTD.Inventors: Takayuki KUWAHARA, Akinori YOSHIOKA, Goshi IKETAKA, Makoto TAKEUCHI
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Publication number: 20230402246Abstract: The apparatus includes: a photocathode including a substrate and a photoelectric film formed on the substrate; a light source configured to emit a pulsed excitation light; a condenser lens facing the substrate of the photocathode and configured to condense the pulsed excitation light toward the photocathode; a first anode electrode and a second anode electrode facing the photoelectric film of the photocathode; a first power supply configured to apply a first control voltage between the first anode electrode and the second anode electrode; and a second power supply configured to apply an acceleration voltage between the photocathode and the second anode electrode. The first anode electrode is disposed between the photocathode and the second anode electrode. A surface of the first anode electrode facing the second anode electrode has a recessed shape, and a surface of the second anode electrode facing the first anode electrode has a protruding shape.Type: ApplicationFiled: December 22, 2020Publication date: December 14, 2023Inventors: Hideo MORISHITA, Takashi OHSHIMA, Yoichi OSE, Toshihide AGEMURA, Makoto KUWAHARA
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Patent number: 11651930Abstract: The present invention is to generate a spatially phase modulated electron wave. A laser radiating apparatus, a spatial light phase modulator, and a photocathode are provided. The photocathode has a semiconductor film having an NEA film formed on a surface thereof, and a thickness of the semiconductor film is smaller than a value obtained by multiplying a coherent relaxation time of electrons in the semiconductor film by a moving speed of the electrons in the semiconductor film. According to the configuration, a spatial distribution of phase and a spatial distribution of intensity of spatial phase modulated light are transferred to an electron wave, and the electron wave emitted from an NEA film is modulated into the spatial distribution of phase and the spatial distribution of intensity of the light.Type: GrantFiled: December 2, 2021Date of Patent: May 16, 2023Assignee: Hitachi High-Tech CorporationInventors: Makoto Kuwahara, Koh Saitoh
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Publication number: 20220104159Abstract: The present invention is to generate a spatially phase modulated electron wave. A laser radiating apparatus, a spatial light phase modulator, and a photocathode are provided. The photocathode has a semiconductor film having an NEA film formed on a surface thereof, and a thickness of the semiconductor film is smaller than a value obtained by multiplying a coherent relaxation time of electrons in the semiconductor film by a moving speed of the electrons in the semiconductor film. According to the configuration, a spatial distribution of phase and a spatial distribution of intensity of spatial phase modulated light are transferred to an electron wave, and the electron wave emitted from an NEA film is modulated into the spatial distribution of phase and the spatial distribution of intensity of the light.Type: ApplicationFiled: December 2, 2021Publication date: March 31, 2022Inventors: Makoto KUWAHARA, Koh SAITOH
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Patent number: 11232927Abstract: The present invention is to generate a spatially phase modulated electron wave. A laser radiating apparatus, a spatial light phase modulator, and a photocathode are provided. The photocathode has a semiconductor film having an NEA film formed on a surface thereof, and a thickness of the semiconductor film is smaller than a value obtained by multiplying a coherent relaxation time of electrons in the semiconductor film by a moving speed of the electrons in the semiconductor film. According to the configuration, a spatial distribution of phase and a spatial distribution of intensity of spatial phase modulated light are transferred to an electron wave, and the electron wave emitted from an NEA film is modulated into the spatial distribution of phase and the spatial distribution of intensity of the light.Type: GrantFiled: January 21, 2019Date of Patent: January 25, 2022Assignee: Hitachi High-Tech CorporationInventors: Makoto Kuwahara, Koh Saitoh
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Patent number: 11094661Abstract: A highly reliable bonded structure having excellent thermal fatigue resistance characteristics and thermal stress relaxation characteristics is provided. The bonded structure of the present invention comprises a first member, a second member capable of being bonded to the first member, and a bonding part interposed between a first bond surface at the first member side and a second bond surface at the second member side to bond the first member and the second member. The bonding part has at least a bonding layer, a reinforcing layer, and an intermediate layer. The bonding layer is composed of an intermetallic compound and bonded to the first bond surface.Type: GrantFiled: November 15, 2016Date of Patent: August 17, 2021Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Hirofumi Ito, Masanori Usui, Makoto Kuwahara
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Publication number: 20210043411Abstract: The present invention is to generate a spatially phase modulated electron wave. A laser radiating apparatus, a spatial light phase modulator, and a photocathode are provided. The photocathode has a semiconductor film having an NEA film formed on a surface thereof, and a thickness of the semiconductor film is smaller than a value obtained by multiplying a coherent relaxation time of electrons in the semiconductor film by a moving speed of the electrons in the semiconductor film. According to the configuration, a spatial distribution of phase and a spatial distribution of intensity of spatial phase modulated light are transferred to an electron wave, and the electron wave emitted from an NEA film is modulated into the spatial distribution of phase and the spatial distribution of intensity of the light.Type: ApplicationFiled: January 21, 2019Publication date: February 11, 2021Inventors: Makoto KUWAHARA, Koh SAITOH
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Patent number: 10386314Abstract: Electrons excited by irradiation of a visible light to a sample is at an energy level lower than a vacuum level, thus photoelectrons are not emitted from the sample and energy of excited electrons cannot be measured. The visible light is irradiated to the sample through a mesh electrode. A surface film for reducing the vacuum level is formed on a surface of the sample. With the surface film being formed, photoelectrons are obtained by the visible light, and these photoelectrons are accelerated by the mesh electrode toward a photoelectron spectrometer. Ultraviolet light may be irradiated to the sample and metal having same potential therewith. In this case, the mesh electrode is set at a retracted position to prohibit interaction of the mesh electrode and the ultraviolet light. A difference between the valence band and the Fermi level of the sample can be measured.Type: GrantFiled: November 2, 2016Date of Patent: August 20, 2019Assignee: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITYInventors: Toru Ujihara, Fumiaki Ichihashi, Takahiko Kawaguchi, Takahiro Ito, Makoto Kuwahara, Peter Baltzer, Yukio Takeuchi
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Publication number: 20190079033Abstract: Electrons excited by irradiation of a visible light to a sample is at an energy level lower than a vacuum level, thus photoelectrons are not emitted from the sample and energy of excited electrons cannot be measured. The visible light is irradiated to the sample through a mesh electrode. A surface film for reducing the vacuum level is formed on a surface of the sample. With the surface film being formed, photoelectrons are obtained by the visible light, and these photoelectrons are accelerated by the mesh electrode toward a photoelectron spectrometer. Ultraviolet light may be irradiated to the sample and metal having same potential therewith. In this case, the mesh electrode is set at a retracted position to prohibit interaction of the mesh electrode and the ultraviolet light. A difference between the valence band and the Fermi level of the sample can be measured.Type: ApplicationFiled: November 2, 2016Publication date: March 14, 2019Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITYInventors: Toru UJIHARA, Fumiaki ICHIHASHI, Takahiko KAWAGUCHI, Takahiro ITO, Makoto KUWAHARA, Peter BALTZER, Yukio TAKEUCHI
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Publication number: 20180240769Abstract: A highly reliable bonded structure having excellent thermal fatigue resistance characteristics and thermal stress relaxation characteristics is provided. The bonded structure of the present invention comprises a first member, a second member capable of being bonded to the first member, and a bonding part interposed between a first bond surface at the first member side and a second bond surface at the second member side to bond the first member and the second member. The bonding part has at least a bonding layer, a reinforcing layer, and an intermediate layer. The bonding layer is composed of an intermetallic compound and bonded to the first bond surface.Type: ApplicationFiled: November 15, 2016Publication date: August 23, 2018Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Hirofumi ITO, Masanori USUI, Makoto KUWAHARA
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Patent number: 9881767Abstract: A path of a spin-polarized electron beam is split into two by a splitter. A spin direction of the spin-polarized electron beam is rotated by a spin direction rotator disposed on a first path, and delayed by a first delay device. On a second path, the electron beam passes through a sample stage. The spin-polarized electron beams split into the first path and the second path are superposed by a biprism, and its intensity distribution is measured. Coherence is measured from a relation between a spin direction rotation angle, a delay time, and a visibility of an interference fringe.Type: GrantFiled: September 28, 2015Date of Patent: January 30, 2018Assignee: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITYInventors: Makoto Kuwahara, Nobuo Tanaka, Toru Ujihara, Koh Saitoh
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Publication number: 20170309446Abstract: A path of a spin-polarized electron beam is split into two by a splitter. A spin direction of the spin-polarized electron beam is rotated by a spin direction rotator disposed on a first path, and delayed by a first delay device. On a second path, the electron beam passes through a sample stage. The spin-polarized electron beams split into the first path and the second path are superposed by a biprism, and its intensity distribution is measured. Coherence is measured from a relation between a spin direction rotation angle, a delay time, and a visibility of an interference fringe.Type: ApplicationFiled: September 28, 2015Publication date: October 26, 2017Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITYInventors: Makoto KUWAHARA, Nobuo TANAKA, Toru UJIHARA, Koh SAITOH
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Patent number: 9671356Abstract: A technique of measuring energy of electrons excited by exposing a semiconductor material to solar ray is proposed. A surface layer having a negative electron affinity is formed on the surface of a semiconductor material. The semiconductor material is placed in a vacuum environment and exposed to solar ray. Photoelectrons emitted from the surface layer having the negative electron affinity are guided to an energy analyzer, and the energy of electrons excited by the solar ray is measured. Since the surface layer having the negative electron affinity is used, the photoelectrons are obtained from the electrons excited by the solar ray, and thereby energy measurement becomes possible.Type: GrantFiled: December 24, 2013Date of Patent: June 6, 2017Assignee: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITYInventors: Toru Ujihara, Fumiaki Ichihashi, Daiki Shimura, Makoto Kuwahara, Shunta Harada
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Patent number: 9515067Abstract: A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.Type: GrantFiled: October 14, 2014Date of Patent: December 6, 2016Assignee: DENSO CORPORATIONInventors: Hirotaka Saikaku, Tsuyoshi Yamamoto, Shoji Mizuno, Masakiyo Sumitomo, Tetsuo Fujii, Jun Sakakibara, Hitoshi Yamaguchi, Yoshiyuki Hattori, Rie Taguchi, Makoto Kuwahara
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Patent number: 9478621Abstract: The element electrodes of a semiconductor element are disposed in a cell region, while an outermost peripheral electrode electrically connected to a semiconductor substrate is disposed in a peripheral region. In the peripheral region, a second-conductivity-type layer is disposed above a super-junction structure. A potential division region is disposed above the second-conductivity-type layer to electrically connect the element electrodes and the outermost peripheral electrode and also divide the voltage between the element electrodes and the outermost peripheral electrode into a plurality of stages. A part of the potential division region overlaps the peripheral region when viewed from the thickness direction of the semiconductor substrate.Type: GrantFiled: September 4, 2012Date of Patent: October 25, 2016Assignee: DENSO CORPORATIONInventors: Nozomu Akagi, Yuma Kagata, Makoto Kuwahara
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Publication number: 20160197174Abstract: A semiconductor device includes a first compound semiconductor layer, a second compound semiconductor layer having a larger band gap than that of the first compound semiconductor layer, p-type third compound semiconductor layer disposed above a portion of the second compound semiconductor layer, a p-type fourth compound semiconductor layer disposed above the third compound semiconductor layer and having a higher resistance than that of the third compound semiconductor layer, and a gate electrode disposed above the fourth compound semiconductor layer.Type: ApplicationFiled: September 8, 2014Publication date: July 7, 2016Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Masakazu KANECHIKA, Makoto KUWAHARA, Hiroyuki UEDA, Hidemoto TOMITA
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Publication number: 20160047760Abstract: A technique of measuring energy of electrons excited by exposing a semiconductor material to solar ray is proposed. A surface layer having a negative electron affinity is formed on the surface of a semiconductor material. The semiconductor material is placed in a vacuum environment and exposed to solar ray. Photoelectrons emitted from the surface layer having the negative electron affinity are guided to an energy analyzer, and the energy of electrons excited by the solar ray is measured. Since the surface layer having the negative electron affinity is used, the photoelectrons are obtained from the electrons excited by the solar ray, and thereby energy measurement becomes possible.Type: ApplicationFiled: December 24, 2013Publication date: February 18, 2016Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITYInventors: Toru UJIHARA, Fumiaki ICHIHASHI, Daiki SHIMURA, Makoto KUWAHARA, Shunta HARADA
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Publication number: 20150041850Abstract: A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.Type: ApplicationFiled: October 14, 2014Publication date: February 12, 2015Inventors: Hirotaka SAIKAKU, Tsuyoshi YAMAMOTO, Shoji MIZUNO, Masakiyo SUMITOMO, Tetsuo FUJII, Jun SAKAKIBARA, Hitoshi YAMAGUCHI, Yoshiyuki HATTORI, Rie TAGUCHI, Makoto KUWAHARA
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Patent number: 8890252Abstract: A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.Type: GrantFiled: July 26, 2011Date of Patent: November 18, 2014Assignee: DENSO CORPORATIONInventors: Hirotaka Saikaku, Tsuyoshi Yamamoto, Shoji Mizuno, Masakiyo Sumitomo, Tetsuo Fujii, Jun Sakakibara, Hitoshi Yamaguchi, Yoshiyuki Hattori, Rie Taguchi, Makoto Kuwahara