Patents by Inventor Makoto Matsuhama
Makoto Matsuhama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240146020Abstract: To suppress individual differences in intensity of output laser light for each semiconductor laser device as much as possible while suppressing generation of stray light in a package of the semiconductor laser device, provided is a semiconductor laser device used for optical analysis, including: a package that accommodates a semiconductor laser element therein; and a light reflection reducing member that is provided inside the package and suppresses reflection of light emitted from the semiconductor laser element, in which the light reflection reducing member is bonded to an inner surface of the package.Type: ApplicationFiled: February 21, 2022Publication date: May 2, 2024Applicant: HORIBA, LTD.Inventors: Yusuke AWANE, Makoto MATSUHAMA, Kosuke TSUKATANI, Kodai NIINA, Takuya IDO
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Patent number: 11949210Abstract: The present invention relates to a semiconductor laser device capable of reducing a measurement error of a temperature detecting element for detecting the temperature of a semiconductor laser element and accurately controlling the temperature of the semiconductor laser element. The semiconductor laser device is used for optical analysis and includes: a semiconductor laser element; a temperature detecting element that detects the temperature of the semiconductor laser element; output terminals that output the output of the temperature detecting element to the outside; wires that electrically connect the temperature detecting element and the output terminals; and a heat capacity increasing part that is provided interposed between the temperature detecting element and output terminal, and the output terminal, and contacts with at least part of the wires to increase the heat capacity of the wires.Type: GrantFiled: March 6, 2020Date of Patent: April 2, 2024Assignee: Horiba, Ltd.Inventors: Makoto Matsuhama, Yusuke Awane, Kimihiko Arimoto, Hirotaka Iseki, Shintaro Masuda
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Publication number: 20240030683Abstract: The present invention enables single mode light to be stably output while also enabling the intensity thereof to be increased, and is a distributed feedback type of semiconductor laser element in which a diffraction grating is formed on a waveguide. The waveguide includes a diffraction grating portion where the diffraction grating is formed, and a flat portion having a region where the diffraction grating is not formed and whose width is broader than the diffraction grating portion. The flat portion has a connecting portion having a region whose width changes continuously approaching a connection location with the diffraction grating portion, and a high-reflection film is provided on an end surface of the flat portion that is on an opposite side from the connecting portion, while an anti-reflection film is provided on an end surface of the diffraction grating portion that is on an opposite side from the connecting portion.Type: ApplicationFiled: December 2, 2021Publication date: January 25, 2024Applicant: HORIBA, LTD.Inventors: Makoto MATSUHAMA, Tomoji TERAKADO, Yusuke AWANE
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Patent number: 11374380Abstract: Provided is a semiconductor laser including: a core layer having an active layer and a diffraction grating layer optically coupled to the active layer; and paired clad layers arranged sandwiching the core layer, and formed with a waveguide along the core layer, and the semiconductor laser includes: a flat layer provided continuously with the diffraction grating layer along the waveguide; and a temperature control mechanism for controlling the temperature of the flat layer to a temperature different from that of the diffraction grating layer.Type: GrantFiled: September 14, 2018Date of Patent: June 28, 2022Assignee: HORIBA, Ltd.Inventors: Tomoji Terakado, Makoto Matsuhama, Kyoji Shibuya
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Patent number: 11056853Abstract: In order to form a reflection film on a rear end facet of a waveguide more easily than conventional, by etching a laminated structure formed on a substrate, a plurality of waveguides segmented in a lattice shape are formed, and a reflection film is formed on a surface of each of the waveguides for reflecting light in each of the waveguides.Type: GrantFiled: May 17, 2019Date of Patent: July 6, 2021Assignee: HORIBA, LTD.Inventor: Makoto Matsuhama
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Publication number: 20210006037Abstract: Provided is a semiconductor laser including: a core layer having an active layer and a diffraction grating layer optically coupled to the active layer; and paired clad layers arranged sandwiching the core layer, and formed with a waveguide along the core layer, and the semiconductor laser includes: a flat layer provided continuously with the diffraction grating layer along the waveguide; and a temperature control mechanism for controlling the temperature of the flat layer to a temperature different from that of the diffraction grating layer.Type: ApplicationFiled: September 14, 2018Publication date: January 7, 2021Inventors: Tomoji Terakado, Makoto Matsuhama, Kyoji Shibuya
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Publication number: 20200287349Abstract: The present invention relates to a semiconductor laser device capable of reducing a measurement error of a temperature detecting element for detecting the temperature of a semiconductor laser element and accurately controlling the temperature of the semiconductor laser element. The semiconductor laser device is used for optical analysis and includes: a semiconductor laser element; a temperature detecting element that detects the temperature of the semiconductor laser element; output terminals that output the output of the temperature detecting element to the outside; wires that electrically connect the temperature detecting element and the output terminals; and a heat capacity increasing part that is provided interposed between the temperature detecting element and output terminal, and the output terminal, and contacts with at least part of the wires to increase the heat capacity of the wires.Type: ApplicationFiled: March 6, 2020Publication date: September 10, 2020Applicant: HORIBA, LTD.Inventors: Makoto MATSUHAMA, Yusuke AWANE, Kimihiko ARIMOTO, Hirotaka ISEKI, Shintaro MASUDA
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Publication number: 20190356108Abstract: In order to form a reflection film on a rear end facet of a waveguide more easily than conventional, by etching a laminated structure formed on a substrate, a plurality of waveguides segmented in a lattice shape are formed, and a reflection film is formed on a surface of each of the waveguides for reflecting light in each of the waveguides.Type: ApplicationFiled: May 17, 2019Publication date: November 21, 2019Applicant: HORIBA, LTD.Inventor: Makoto MATSUHAMA
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Patent number: 8302459Abstract: The measurement sensitivity is improved by suppressing the surrounding temperature influence as much as possible, while realizing scale reduction, and by enlarging the detection signal, while reducing the production errors in enclosing a reference gas. Provided is a thermal conductivity sensor that detects thermal conductivity of a sample gas by using a Wheatstone Bridge circuit constructed in such a manner that measurement resistors that are brought into contact with the sample gas are disposed on a first side, and reference resistors that are brought into contact with a reference gas are disposed on a second side, and comparing the potential difference between connection points of the reference resistors and the measurement resistors. The measurement resistors disposed on the first side are assembled in one measurement space, and the reference resistors disposed on the second side are assembled in one reference space.Type: GrantFiled: March 18, 2010Date of Patent: November 6, 2012Assignee: HORIBA, Ltd.Inventors: Makoto Matsuhama, Tomoko Seko, Shuji Takada, Hiroshi Mizutani, Takuji Oida, Masahiko Endo, Takuya Ido
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Publication number: 20100242573Abstract: The measurement sensitivity is improved by suppressing the surrounding temperature influence as much as possible, while realizing scale reduction, and by enlarging the detection signal, while reducing the production errors in enclosing a reference gas. Provided is a thermal conductivity sensor that detects thermal conductivity of a sample gas by using a Wheatstone Bridge circuit constructed in such a manner that measurement resistors that are brought into contact with the sample gas are disposed on a first side, and reference resistors that are brought into contact with a reference gas are disposed on a second side, and comparing the potential difference between connection points of the reference resistors and the measurement resistors. The measurement resistors disposed on the first side are assembled in one measurement space, and the reference resistors disposed on the second side are assembled in one reference space.Type: ApplicationFiled: March 18, 2010Publication date: September 30, 2010Applicant: HORIBA LTD.Inventors: Makoto Matsuhama, Tomoko Seko, Shuji Takada, Hiroshi Mizutani, Takuji Oida, Masahiko Endo, Takuya Ido