Abstract: In an electric power device and a method for controlling the same, a first circuit is electrically connected to a first battery tray and a second battery tray, a second circuit is electrically connected to the first battery tray, and a third circuit is electrically connected to the second battery tray. Between the first circuit and the second circuit, a first resistor unit is connected in series with the first battery tray, and a first interrupting unit is connected in parallel with the first resistor unit. Between the first circuit and the third circuit, a second resistor unit is connected in series with the second battery tray, and a second interrupting unit is connected in parallel with the second resistor unit.

Abstract: A method produces a semiconductor device, the method having a step of transferring an underlayer by employing a resist underlayer film-forming composition containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane in a non-alcoholic solvent in the presence of a strong acid, followed by a step (G) of removing the patterned resist film, the patterned resist underlayer film, and/or particles with a sulfuric acid-hydrogen peroxide mixture (SPM) prepared by mixing of aqueous hydrogen peroxide with sulfuric acid and/or an ammonia-hydrogen peroxide mixture (SC1) prepared by mixing of aqueous hydrogen peroxide with aqueous ammonia, wherein: the hydrolyzable silane contains a hydrolyzable silane of the following Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) (wherein R1 is an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond).

Abstract: An Fe-based amorphous alloy ribbon reduced in iron loss, less deformed, and highly productive in a condition of a magnetic flux density of 1.45 T is provided. One aspect of the present disclosure provides an Fe-based amorphous alloy ribbon having first and second surfaces, and is provided with continuous linear laser irradiation marks on at least the first surface. Each linear laser irradiation mark is formed along a direction orthogonal to a casting direction of the Fe-based amorphous alloy ribbon, and has unevenness on its surface. When the unevenness is evaluated in the casting direction, a height difference HL×width WA calculated from the height difference between a highest point and a lowest point in a thickness direction of the Fe-based amorphous alloy ribbon and the width WA which is a length of the linear irradiation mark on the first surface is 6.0 to 180 ?m2.

Abstract: A sliding spline shaft device of the present invention includes a male spline and a female spline that is fitted to the male spline in an axially slidable manner, and at least one of the splines has a surface processed layer. The surface processed layer includes an undercoat layer, an intermediate layer containing phosphate, and a topcoat layer containing solid lubricant, in this order. The undercoat layer contains iron nitride and/or iron carbide. Thus, the surface of a base material has high hardness. As a result, microscopic deformation of the sliding surface is reduced, and increase in a real contact area is suppressed, whereby stick-slip is prevented.

Abstract: A cognitive function evaluation device includes: an obtainment unit that obtains utterance data indicating a voice of an evaluatee uttering a sentence as instructed; a calculation unit that calculates, from the utterance data obtained by the obtainment unit, a feature based on the utterance data; an evaluation unit that compares the feature calculated by the calculation unit to reference data indicating a relationship between voice data indicating a voice of a person and a cognitive function of the person to evaluate the cognitive function of the evaluatee; and an output unit that outputs the sentence to be uttered by the evaluatee and outputs a result of evaluation by the evaluation unit.

Abstract: A resist underlayer film-forming composition capable of reducing occurrence of defects caused by microparticles or the like that may be generated during formation of a coating film. A silicon-containing resist underlayer film-forming composition including: [A]a polysiloxane; [B] a glycol compound having a normal boiling point of 230.0° C. or higher and being of the following Formula (1): (wherein R1 and R2 are each independently a hydrogen atom, a C1-4 alkyl group, or a C3-4 acyl group; and n is an integer of 3 or more); and [C] a solvent (except for a compound corresponding to the compound [B]).

Abstract: An acetal-protected polysiloxane composition, used as a photosensitive composition and a coating composition for forming a flat film on a substrate to be processed for performing pattern reversal. A coating composition or photosensitive composition including: a polysiloxane obtained from a hydrolysis-condensation product of a hydrolyzable silane having 2 to 4 hydrolyzable groups in a molecule by protecting the condensation product's silanol groups with acetal groups, wherein in the hydrolysis-condensation product, an organic group bonded to silicon atoms through Si—C bonds exists in molar ratio of 0?(organic group)/(Si)?0.29 on average.

Abstract: A resist underlayer film-forming composition: in which self-curing is performed at a low temperature without an acid catalyst or a crosslinking agent, the amount of a sublimate can be reduced, and a high-hardness film having high bending resistance; suitable as a crosslinking agent; exhibits higher flattening and heat resistance when used as a crosslinking agent; has embedding properties equivalent to conventional products; and has an optical constant or etching resistance freely changeable according to monomer selection. The composition contains a solvent and a polymer (X) containing a repeating structural unit which is obtained by alternately bonding, via a linking group —O—, an aromatic compound A having an ROCH2— group (R is a monovalent organic group, a hydrogen atom, or a mixture thereof) to an aromatic compound B having at most 120 carbon atoms and different from A, and in which one to six B's are bonded to one A.

Abstract: Provided is a resist underlayer film-forming composition for forming resist underlayer film usable as hard mask and removable by wet etching process using chemical solution such as sulfuric acid/hydrogen peroxide. A resist underlayer film-forming composition for lithography includes a component (A) and component (B), the component (A) includes a hydrolyzable silane, hydrolysis product thereof, or hydrolysis-condensation product thereof, the hydrolyzable silane includes hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b) (where R1 is organic group of Formula (2): and is bonded to silicon atom through a Si—C bond; R3 is an alkoxy group, acyloxy group, or halogen group; is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3), and the component (B) is cross-linkable compound having ring structure having alkoxymethyl group or hydroxymethyl group, cross-linkable compound having epoxy group or blocked isocyanate group.

Abstract: A composition for forming a resist underlayer film includes: a solvent; and a polymer containing a unit structure (A) represented by formula (1). The composition is reduced in the amount of sublimated substances that contaminate a device, is improved in the in-plane uniform coatability of a film to be coated thereon, exhibits satisfactory resistance to a chemical solution used in a resist under layer film, and can exhibit other satisfactory properties.

Abstract: A layer contains a block copolymer in which a microphase-separated structure of the block copolymer has been induced to be perpendicular to a substrate, the process being difficult to perform by means of heating at atmospheric pressure. A method produces this layer. A method produces a semiconductor device in which a vertically phase-separated block copolymer layer is used. The vertically phase-separated block copolymer layer is formed by heating under a pressure below atmospheric pressure and at a temperature at which induced self-assembly can occur. It is preferable that the vertical phase separation includes a lamellar portion. It is preferable that the lamellar portion includes PMMA. It is preferable that the heating temperature is 290° C. or higher. It is preferable to additionally have a layer, which neutralizes the surface energy of the block copolymer, beneath the block copolymer layer.

Abstract: A composition for forming a resist underlayer film containing a solvent and polymer comprising a unit structure (A) represented by formula (1) and/or formula (2). The composition is capable of forming a hydrophobic underlayer film that has a high contact angle with pure water and exhibits high adhesion to an upper layer film, thereby being not susceptible to separation therefrom, while meeting the requirement of good coatability, the composition being also capable of exhibiting other good characteristics such as sufficient resistance to a chemical agent that is used for resist underlayer films.

Abstract: The present invention has as its object to provide a method for producing green coffee beans that can be used to make coffee beverages with a fruity aroma. Dining the process of producing green coffee beans, the following steps are performed: heating green coffee beans, and contacting the heated green coffee beans with an alcohol.

Abstract: A resist underlayer film forming composition capable of forming a flat film that exhibits high etching resistance, a good dry etching rate ratio and a good optical constant, while having good coverage even with respect to a so-called multileveled substrate and having a small difference in the film thickness after embedding. Also, a method for producing a polymer that is suitable for the resist underlayer film forming composition; a resist underlayer film which uses the resist underlayer film forming composition; and a method for producing a semiconductor device. This resist underlayer film forming composition contains: a reaction product of an aromatic compound (A) that has from 6 to 120 carbon atoms, and a compound that is represented by formula (1); and a solvent.

Abstract: A stepped substrate coating composition for forming a coating film having planarity on a substrate, including: a main agent and a solvent, the main agent containing a compound (A), a compound (B), or a mixture thereof, the compound (A) having a partial structure Formula (A-1) or (A-2): and the compound (B) having at least one partial structure selected from Formulae (B-1)-(B-5), or having a partial structure including a combination of a partial structure of Formula (B-6) and a partial structure of Formula (B-7) or (B-8): where the composition is cured by photoirradiation or by heating at 30° C.-300° C.; and the amount of the main agent in the solid content of the composition is 95%-100% by mass.

Abstract: A composition for forming a film capable of effectively functioning as a resist underlayer film exhibiting resistance to a solvent in a composition for forming a resist film serving as an upper layer, favorable etching property to a fluorine-containing gas, and favorable lithographic property.

Abstract: A layer including a block copolymer in which a microphase-separated structure of the block copolymer has been induced perpendicular to a substrate, this process being difficult in heating under atmospheric pressure; a method for producing the layer; and a method for producing a semiconductor device in which is used a vertically phase-separated layer of a block copolymer. A vertically phase-separated layer of a block copolymer formed by heating at a pressure below atmospheric pressure and a temperature at which induced self-assembly can occur.

Abstract: Provided is a novel composition for forming a resist underlayer film. This composition for forming a resist underlayer film includes a polymer (X) and a solvent, the polymer (X) containing: a plurality of structural units which are the same as or different from each other and have a methoxymethyl group and a ROCH2- group (R is a monovalent organic group, a hydrogen atom, or a mixture thereof) other than the methoxymethyl group; and a linking group that links the more than one structural unit.

Abstract: A film-forming composition includes a solvent and hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane compound by using an acidic compound containing two or more acidic groups. The hydrolyzable silane compound contains an amino-group-containing silane with formula (1). R1 is an organic group containing an amino group. R2 is a substitutable alkyl, substitutable aryl, substitutable aralkyl, substitutable halogenated alkyl, substitutable halogenated aryl, substitutable halogenated aralkyl, substitutable alkoxyalkyl, substitutable alkoxyaryl, substitutable alkoxyaralkyl, or substitutable alkenyl group, or an organic group containing an epoxy, acryloyl, methacryloyl, mercapto, or a cyano group. R3 is an alkoxy, aralkyloxy, or acyloxy group or halogen atom. a is an integer of 1 or 2, b of 0 or 1; and a and b satisfy a relation of a+b?2.

Abstract: A film-forming composition for forming a resist underlayer film for a solvent development type resist that is capable of forming a good resist pattern which contains a hydrolysis-condensation product of a hydrolyzable silane compound, at least one substance that is selected from the group consisting of an aminoplast crosslinking agent and a phenoplast crosslinking agent, and a solvent, and wherein the hydrolyzable silane compound contains a hydrolyzable silane represented by formula (1).