Patents by Inventor Makoto Nawata
Makoto Nawata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9607874Abstract: A plasma processing apparatus includes a stage in a processing chamber where plasma is formed, a wafer to be processed, and an electrode arranged at an upper part of the stage and supplied with power to electrostatically attract and hold the wafer on the stage, and consecutively processing a plurality of wafers one by one. There are plural processing steps of conducting processing using the plasma under different conditions and there are plural periods when formation of plasma is stopped between the processing steps. An inner wall of the processing chamber is coated before starting the processing of any wafer, and voltage supplied to the electrode is changed according to a balance of respective polarities of particles floating and charged in the processing chamber in each period when formation of plasma is stopped.Type: GrantFiled: September 11, 2015Date of Patent: March 28, 2017Assignee: Hitachi High-Technologies CorporationInventors: Hiroyuki Kobayashi, Tomoyuki Tamura, Masaki Ishiguro, Shigeru Shirayone, Kazuyuki Ikenaga, Makoto Nawata
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Publication number: 20160079043Abstract: A plasma processing apparatus includes a stage in a processing chamber where plasma is formed, a wafer to be processed, and an electrode arranged at an upper part of the stage and supplied with power to electrostatically attract and hold the wafer on the stage, and consecutively processing a plurality of wafers one by one. There are plural processing steps of conducting processing using the plasma under different conditions and there are plural periods when formation of plasma is stopped between the processing steps. An inner wall of the processing chamber is coated before starting the processing of any wafer, and voltage supplied to the electrode is changed according to a balance of respective polarities of particles floating and charged in the processing chamber in each period when formation of plasma is stopped.Type: ApplicationFiled: September 11, 2015Publication date: March 17, 2016Inventors: Hiroyuki KOBAYASHI, Tomoyuki TAMURA, Masaki ISHIGURO, Shigeru SHIRAYONE, Kazuyuki IKENAGA, Makoto NAWATA
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Publication number: 20150371825Abstract: A plasma processing apparatus in which high frequency power to generate plasma supplied from a high frequency power supply is introduced into a processing chamber via a top plate and a shower plate and a member to be processed mounted on a stage electrode is processed, wherein a grounded spacer whose base material is a metal is installed between the shower. plate and an inner cylinder.Type: ApplicationFiled: February 20, 2015Publication date: December 24, 2015Inventors: Hiroyuki Kobayashi, Makoto Nawata, Hikaru Koyama, Kazuyuki Ikenaga
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Patent number: 8142567Abstract: A vacuum processing apparatus includes a member having a gas passage formed in a center between the pressure adjusting valve of an exhaust system and a turbo-molecular pump, and a particle dispersion prevention unit having plural stationary blades formed to be tilted in a direction opposite the direction of the rotary blade of the turbo-molecular pump on the outer circumference of the member.Type: GrantFiled: February 25, 2009Date of Patent: March 27, 2012Assignee: Hitachi High-Technologies CorporationInventors: Hiroyuki Kobayashi, Kenji Maeda, Masaru Izawa, Makoto Nawata
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Publication number: 20100192857Abstract: A vacuum processing apparatus includes a member having a gas passage formed in a center between the pressure adjusting valve of an exhaust system and a turbo-molecular pump, and a particle dispersion prevention unit having plural stationary blades formed to be tilted in a direction opposite the direction of the rotary blade of the turbo-molecular pump on the outer circumference of the member.Type: ApplicationFiled: February 25, 2009Publication date: August 5, 2010Inventors: Hiroyuki Kobayashi, Kenji Maeda, Masaru Izawa, Makoto Nawata
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Publication number: 20100163181Abstract: There is provided a vacuum processing apparatus including a valve whose opening degree can be set to any size and a control computer which automatically controls a depressurizing rate. The vacuum processing apparatus can reduce the number of foreign particles adhered to a sample to be processed in the lock chamber and can improve the throughput at the same time.Type: ApplicationFiled: February 12, 2009Publication date: July 1, 2010Inventors: Hiroyuki KOBAYASHI, Kenji MAEDA, Masaru IZAWA, Makoto NAWATA, Shingo KIMURA
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Patent number: 6444087Abstract: A plasma etching system using a ground electrode made of silicon carbide and a cover made of a dielectric material not containing aluminum, where the cover is laid over the substrate electrode, thereby preventing aluminum from being produced out of these parts and reducing device damage. Namely, a plasma etching system has a substrate electrode mounted in a vacuum process chamber, a ground electrode and a plasma generating source, and uses plasma to provide etching of substrates mounted on said substrate electrode. The plasma etching system is characterized in that the ground electrode is made of carbon or silicon carbide, and the dielectric material containing a Si compound covers the surface portion of the substrate electrode facing inside the substrate installation portion of the vacuum process chamber, except for the substrate installation portion.Type: GrantFiled: May 30, 2001Date of Patent: September 3, 2002Assignee: Hitachi, Ltd.Inventors: Makoto Nawata, Mamoru Yakushiji, Tomoyuki Tamura
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Publication number: 20020011464Abstract: A plasma etching system using a ground electrode made of silicon carbide and a cover made of a dielectric material not containing aluminum, where the cover is laid over the substrate electrode, thereby preventing aluminum from being produced out of these parts and reducing device damage. Namely, a plasma etching system has a substrate electrode mounted in a vacuum process chamber, a ground electrode and a plasma generating source, and uses plasma to provide etching of substrates mounted on said substrate electrode. The plasma etching system is characterized in that the ground electrode is made of carbon or silicon carbide, and the dielectric material containing a Si compound covers the surface portion of the substrate electrode facing inside the substrate installation portion of the vacuum process chamber, except for the substrate installation portion.Type: ApplicationFiled: August 29, 2001Publication date: January 31, 2002Inventors: Makoto Nawata, Mamoru Yakushiji, Tomoyuki Tamura
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Publication number: 20010050147Abstract: A plasma etching system using a ground electrode made of silicon carbide and a cover made of a dielectric material not containing aluminum, where the cover is laid over the substrate electrode, thereby preventing aluminum from being produced out of these parts and reducing device damage. Namely, a plasma etching system has a substrate electrode mounted in a vacuum process chamber, a ground electrode and a plasma generating source, and uses plasma to provide etching of substrates mounted on said substrate electrode. The plasma etching system is characterized in that the ground electrode is made of carbon or silicon carbide, and the dielectric material containing a Si compound covers the surface portion of the substrate electrode facing inside the substrate installation portion of the vacuum process chamber, except for the substrate installation portion.Type: ApplicationFiled: May 30, 2001Publication date: December 13, 2001Inventors: Makoto Nawata, Mamoru Yakushiji, Tomoyuki Tamura
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Patent number: 6329298Abstract: A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.Type: GrantFiled: December 8, 1997Date of Patent: December 11, 2001Assignee: Hitachi, Ltd.Inventors: Ryooji Fukuyama, Makoto Nawata, Yutaka Kakehi, Hironobu Kawahara, Yoshiaki Sato, Yoshimi Torii, Akira Kawaraya, Yoshie Sato
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Patent number: 6328845Abstract: A plasma-etching apparatus is capable of etching a film of a workpiece with a plasma produced in an evacuated etching chamber at a high etch selectivity relative to an underlying film or a resist film. The frequency of a RF bias voltage applied to a sample table by a RF power source is adjusted so that the ion energy of the plasma is distributed in a saddle-peak energy distribution pattern. The film is etched at a high etch selectivity relative to a material having a threshold ion energy.Type: GrantFiled: March 18, 1994Date of Patent: December 11, 2001Assignee: Hitachi, Ltd.Inventors: Yutaka Ohmoto, Ryooji Fukuyama, Makoto Nawata
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Patent number: 5914051Abstract: A microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means isolated from a waveguide for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples, such as semiconductor device substrates, to an etching process, a film forming process, etc. The microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to-be-processed.Type: GrantFiled: May 18, 1995Date of Patent: June 22, 1999Assignee: Hitachi, Ltd.Inventors: Saburo Kanai, Yoshinao Kawasaki, Kazuaki Ichihashi, Seiichi Watanabe, Makoto Nawata
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Patent number: 5804033Abstract: The present invention relates to a microwave plasma processing method and apparatus. According to the present invention, the microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to be processed. In addition, homogeneity and stability of the plasma are improved by inserting a cavity resonator between the microwave generator and plasma processing (plasma generating) chamber, and coupling the cavity resonator and plasma processing chamber such that microwaves substantially only of a desired mode (e.g., TE.sub.11) pass into the plasma processing chamber. Such coupling to provide microwaves substantially only of circular TE.sub.Type: GrantFiled: March 10, 1993Date of Patent: September 8, 1998Assignee: Hitachi, Ltd.Inventors: Saburo Kanai, Yoshinao Kawasaki, Kazuaki Ichihashi, Seiichi Watanabe, Makoto Nawata, Muneo Furuse, Tetsunori Kaji
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Patent number: 5785807Abstract: The present invention relates to a microwave plasma processing method and apparatus. More particularly, it relates to a microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means isolated from a waveguide for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples, such as semiconductor device substrates, to an etching process, a film forming process, etc. According to the present invention, the microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to-be-processed.Type: GrantFiled: September 26, 1991Date of Patent: July 28, 1998Assignee: Hitachi, Ltd.Inventors: Saburo Kanai, Yoshinao Kawasaki, Kazuaki Ichihashi, Seiichi Watanabe, Makoto Nawata
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Patent number: 5770100Abstract: A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.Type: GrantFiled: June 12, 1996Date of Patent: June 23, 1998Inventors: Ryooji Fukuyama, Makoto Nawata, Yutaka Kakehi, Hironobu Kawahara, Yoshiaki Sato, Yoshimi Torii, Akira Kawaraya, Yoshie Sato
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Patent number: 5647944Abstract: The present invention improves ashing speed for a treated object and ashing speed uniformity over the treated object by improving microwave transmission efficiency and by generating uniform and strong plasma in a plasma generating chamber. According to the present invention, the microwave treatment apparatus comprises expanding wave guide tubes having an expanded room of a given size on the microwave inlet side of a microwave inlet window 9 which forms a plasma generating chamber, and a partition board with a hole having an aspect ratio other than one in the room. Therewith, a microwave resonant space is formed with interposing the partition board inside the space of the expanded wave guide tube to generate a uniform and strong electric field inside the space of the expanded wave guide tube, and then the microwave is injected into the plasma generating chamber through the microwave inlet window to generate uniform and strong plasma in the plasma generating chamber.Type: GrantFiled: March 17, 1994Date of Patent: July 15, 1997Assignee: Hitachi, Ltd.Inventors: Takeshi Tsubaki, Katsuya Watanabe, Hidenori Takesue, Yoshiaki Sato, Katsuyoshi Kudo, Makoto Nawata
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Patent number: 5556714Abstract: A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.Type: GrantFiled: September 29, 1994Date of Patent: September 17, 1996Assignee: Hitachi, Ltd.Inventors: Ryooji Fukuyama, Makoto Nawata, Yutaka Kakehi, Hironobu Kawahara, Yoshiaki Sato, Yoshimi Torii, Akira Kawaraya, Yoshie Sato
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Patent number: 5520771Abstract: The present invention relates to a microwave plasma processing method and apparatus. More particularly, it relates to a microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means isolated from a waveguide for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples, such as semiconductor device substrates, to an etching process, a film forming process, etc.According to the present invention, the microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to-be-processed.Type: GrantFiled: May 18, 1995Date of Patent: May 28, 1996Assignee: Hitachi, Ltd.Inventors: Saburo Kanai, Yoshinao Kawasaki, Kazuaki Ichihashi, Seiichi Watanabe, Makoto Nawata
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Patent number: 5380397Abstract: A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.Type: GrantFiled: October 27, 1992Date of Patent: January 10, 1995Assignee: Hitachi, Ltd.Inventors: Ryooji Fukuyama, Makoto Nawata, Yutaka Kakehi, Hironobu Kawahara, Yoshiaki Sato, Yoshimi Torii, Akira Kawaraya, Yoshie Sato
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Patent number: 5276386Abstract: In a microwave plasma generating method and apparatus according to the present invention, a slow wave structure is disposed in the propagation region of microwaves, and the microwaves are introduced at a delayed phase velocity into a discharge chamber so that treating gases are transformed into plasma. Thus, the phase velocity of the microwaves is adjusted to a relatively low velocity, at which charged particles are distributed most densely in the plasma, so that the energy may be efficiently transformed to many more charged particles in the plasma. Thus, the plasma of high density is generated to improve a plasma treating rate.Type: GrantFiled: March 14, 1991Date of Patent: January 4, 1994Assignee: Hitachi, Ltd.Inventors: Seiichi Watanabe, Makoto Nawata, Ryooji Fukuyama, Yutaka Kakehi, Saburo Kanai, Yoshinao Kawasaki