Abstract: An electronics device includes a power semiconductor device including a temperature detection diode, a first semiconductor integrated circuit device including a detection circuit for detecting VF from the temperature detection diode and a second semiconductor integrated circuit device. The second semiconductor integrated circuit device includes, an outside air temperature acquisition unit which acquires outside air temperature information, a storage which stores temperature characteristic data of the temperature detection diode and a first value based on a signal from the detection circuit at a first temperature and a temperature arithmetic processing unit which calculates a temperature of the power semiconductor device from a third value based on a signal from the detection circuit, the temperature characteristic data, the first temperature acquired by the outside air temperature acquisition unit and the first value.

Abstract: Adjustment of drive control based on a detection voltage of a transformer requires a loop time, and therefore high-speed processing of the adjustment is difficult. A semiconductor integrated circuit device includes a driving circuit that drives a power semiconductor device and a driving capability control circuit that controls a driving capability of the driving circuit. The driving circuit stops driving of the power semiconductor device based on an abnormal current detected from a sense current of the power semiconductor device. The driving capability control circuit controls the driving capability of the driving circuit based on a normal current detected from the sense current of the power semiconductor device.

Abstract: An electronics device includes a power semiconductor device including a temperature detection diode, a first semiconductor integrated circuit device including a detection circuit for detecting VF from the temperature detection diode and a second semiconductor integrated circuit device. The second semiconductor integrated circuit device includes, an outside air temperature acquisition unit which acquires outside air temperature information, a storage which stores temperature characteristic data of the temperature detection diode and a first value based on a signal from the detection circuit at a first temperature and a temperature arithmetic processing unit which calculates a temperature of the power semiconductor device from a third value based on a signal from the detection circuit, the temperature characteristic data, the first temperature acquired by the outside air temperature acquisition unit and the first value.

Abstract: An electronics device includes a power semiconductor device including a temperature detection diode, a first semiconductor integrated circuit device including a detection circuit for detecting VF from the temperature detection diode and a second semiconductor integrated circuit device. The second semiconductor integrated circuit device includes, an outside air temperature acquisition unit which acquires outside air temperature information, a storage which stores temperature characteristic data of the temperature detection diode and a first value based on a signal from the detection circuit at a first temperature and a temperature arithmetic processing unit which calculates a temperature of the power semiconductor device from a third value based on a signal from the detection circuit, the temperature characteristic data, the first temperature acquired by the outside air temperature acquisition unit and the first value.

Abstract: A semiconductor device includes a drive control circuit which drives a gate terminal of an IGBT. The drive control circuit includes a state machine control circuit, a base data memory and a current drive circuit which drives the IGBT on the basis of driving current information stored in the base data memory. The state machine control circuit reads out driving current information for rising stored in the base data memory a plurality of times in a predetermined time period and drives the current drive circuit at rising of a PWM signal, and reads out driving current information for falling stored in the base data memory a plurality of times in a predetermined time period and drives the current drive circuit at falling of the PWM signal.

Abstract: A semiconductor integrated circuit device includes a temperature prediction circuit that predicts the temperature of a power semiconductor device having a built-in switching transistor. The temperature prediction circuit includes: a delay circuit that stores a history of electric power values for a specific number of times, the electric power values being calculated based on the steady loss and switching loss of the switching transistor; and a circuit that calculates the temperature prediction value of the power semiconductor device based on the value of the delay circuit and a time factor corresponding to a temperature heat dissipation characteristic.

Abstract: An electronic device has a power semiconductor device, a first semiconductor integrated circuit device, and a second semiconductor integrated circuit device. The power semiconductor device has a terminal outputting sense current. The first semiconductor integrated circuit device has an overcurrent detection circuit detecting overcurrent on the basis of the sense current, and a temperature detection circuit detecting temperature of the power semiconductor device. The second semiconductor integrated circuit device has a storage device storing a temperature characteristic of a current mirror ratio of the power semiconductor device, a temperature detecting unit calculating temperature on the basis of an output of the temperature detection circuit, and an overcurrent detection control unit controlling the overcurrent detection circuit on the basis of the temperature detected by the temperature detecting unit and the temperature characteristic of the current mirror ratio stored in the storage device.

Abstract: A semiconductor device includes a drive control circuit which drives a gate terminal of an IGBT. The drive control circuit includes a state machine control circuit, a base data memory and a current drive circuit which drives the IGBT on the basis of driving current information stored in the base data memory. The state machine control circuit reads out driving current information for rising stored in the base data memory a plurality of times in a predetermined time period and drives the current drive circuit at rising of a PWM signal, and reads out driving current information for falling stored in the base data memory a plurality of times in a predetermined time period and drives the current drive circuit at falling of the PWM signal.

Abstract: Adjustment of drive control based on a detection voltage of a transformer requires a loop time, and therefore high-speed processing of the adjustment is difficult. A semiconductor integrated circuit device includes a driving circuit that drives a power semiconductor device and a driving capability control circuit that controls a driving capability of the driving circuit. The driving circuit stops driving of the power semiconductor device based on an abnormal current detected from a sense current of the power semiconductor device. The driving capability control circuit controls the driving capability of the driving circuit based on a normal current detected from the sense current of the power semiconductor device.

Abstract: Adjustment of drive control based on a detection voltage of a transformer requires a loop time, and therefore high-speed processing of the adjustment is difficult. A semiconductor integrated circuit device includes a driving circuit that drives a power semiconductor device and a driving capability control circuit that controls a driving capability of the driving circuit. The driving circuit stops driving of the power semiconductor device based on an abnormal current detected from a sense current of the power semiconductor device. The driving capability control circuit controls the driving capability of the driving circuit based on a normal current detected from the sense current of the power semiconductor device.

Abstract: An electronic device has a power semiconductor device, a first semiconductor integrated circuit device, and a second semiconductor integrated circuit device. The power semiconductor device has a terminal outputting sense current. The first semiconductor integrated circuit device has an overcurrent detection circuit detecting overcurrent on the basis of the sense current, and a temperature detection circuit detecting temperature of the power semiconductor device. The second semiconductor integrated circuit device has a storage device storing a temperature characteristic of a current mirror ratio of the power semiconductor device, a temperature detecting unit calculating temperature on the basis of an output of the temperature detection circuit, and an overcurrent detection control unit controlling the overcurrent detection circuit on the basis of the temperature detected by the temperature detecting unit and the temperature characteristic of the current mirror ratio stored in the storage device.

Abstract: Adjustment of drive control based on a detection voltage of a transformer requires a loop time, and therefore high-speed processing of the adjustment is difficult. A semiconductor integrated circuit device includes a driving circuit that drives a power semiconductor device and a driving capability control circuit that controls a driving capability of the driving circuit. The driving circuit stops driving of the power semiconductor device based on an abnormal current detected from a sense current of the power semiconductor device. The driving capability control circuit controls the driving capability of the driving circuit based on a normal current detected from the sense current of the power semiconductor device.

Abstract: A semiconductor integrated circuit device includes a temperature prediction circuit that predicts the temperature of a power semiconductor device having a built-in switching transistor. The temperature prediction circuit includes: a delay circuit that stores a history of electric power values for a specific number of times, the electric power values being calculated based on the steady loss and switching loss of the switching transistor; and a circuit that calculates the temperature prediction value of the power semiconductor device based on the value of the delay circuit and a time factor corresponding to a temperature heat dissipation characteristic.

Abstract: An electronics device includes a power semiconductor device including a temperature detection diode, a first semiconductor integrated circuit device including a detection circuit for detecting VF from the temperature detection diode and a second semiconductor integrated circuit device. The second semiconductor integrated circuit device includes, an outside air temperature acquisition unit which acquires outside air temperature information, a storage which stores temperature characteristic data of the temperature detection diode and a first value based on a signal from the detection circuit at a first temperature and a temperature arithmetic processing unit which calculates a temperature of the power semiconductor device from a third value based on a signal from the detection circuit, the temperature characteristic data, the first temperature acquired by the outside air temperature acquisition unit and the first value.

Abstract: The invention provides a radio receiving method and apparatus by which adjustment of a reception frequency when a radio modulation signal of a PSK system is received is realized by simple processing. Phase data is sampled out in a predetermined cycle from a random received modulation signal and cumulatively added for a predetermined period, and the reception frequency is adjusted so that a calculation result of the cumulative addition may satisfy a predetermined allowance range. Consequently, the reception frequency can be adjusted by simple processing without detecting a phase error from the modulation signal.

Abstract: A speech frame is converted to speech bursts and interleaved over a predetermined number of TDMA frames for transmission. At a receive site, the transmitted signal is equalized and a quality signal indicating the quality of each burst signal is produced from the equalized signal. The equalized signal is de-interleaved, and then Vitrerbi-decoded speech samples are produced. A CRC circuit performs an error check operation on the decoded speech samples to produce an error bit if a speech frame failed the check. A decision circuit compares the quality signal with a first reference value and produces a first disable signal when it is lower than the first reference value. The decision circuit compares a total sum of the quality signals produced from the predetermined number of burst signals with a second reference value and produces a second disable signal when the total sum of the quality signals is lower than the second reference value.

Abstract: A reference voltage (V.sub.ref) is set to a received signal level corresponding to an anticipated data error rate and compared with outputs of intermediate frequency amplifiers (3-1, 3-2) by comparators (7-1, 7-2). When the outputs of the intermediate frequency amplifiers (3- 1, 3-2) are lower than the reference voltage (V.sub.ref), operation of receiving circuits (A12-1, B12-2) is stopped. At inter symbol interference amount calculating sections (6-1, 6-2), inter symbol interference amounts are calculated from auto-correlation parameters of preamble signal bit trains included in received signal data, and selectors (9-1, 9-2) are controlled so that a diversity branch having the least residual inter symbol interference amount or the highest S/N ratio is selected and the received signal data of the selected branch are inputted to an equalizing section (11). When a signal having a high data error rate is received, operation of the corresponding receiving circuit is stopped.