Abstract: A film formation apparatus for a semiconductor process includes a cleaning gas supply circuit, a concentration measuring section, and an information processor. The cleaning gas supply circuit is configured to supply a cleaning gas into a reaction chamber to perform cleaning of removing from an inner surface of the reaction chamber a by-product film derived from a film formation gas. The concentration measuring section is disposed in an exhaust system to monitor concentration of a predetermined component contained in exhaust gas from the reaction chamber. The information processor is configured to compare a measurement value obtained by the concentration measuring section with a preset value and to thereby determine an end point of the cleaning.

Abstract: A operational control device for supplying electric power from an electric power equipment to a plurality of power consumption systems store a power consumption pattern for each of the power consumption systems. It obtains a combined expected power consumption pattern by adding power consumption patterns of the operating power consumption systems. Next, a combined assumed power consumption pattern is obtained by adding a power consumption pattern, obtained based on a temporary operational start time, of a power consumption system which has made a request for a starting operation.

Abstract: In an operational control device 20 of a power supply system for supplying electric power from an electric power equipment 4 to a plurality of power consumption systems 8A to 8F, a power consumption pattern of each of the power consumption systems is stored, and a combined expected power consumption pattern 40 is obtained by adding together power consumption patterns of operating power consumption systems. Next, a combined assumed power consumption pattern is obtained by adding a power consumption pattern, obtained based on a temporary operational start time, of a power consumption system which has made the request for starting operation to the combined expected power consumption pattern.

Abstract: A film formation apparatus for a semiconductor process includes a cleaning gas supply circuit, a concentration measuring section, and an information processor. The cleaning gas supply circuit is configured to supply a cleaning gas into a reaction chamber to perform cleaning of removing from an inner surface of the reaction chamber a by-product film derived from a film formation gas. The concentration measuring section is disposed in an exhaust system to monitor concentration of a predetermined component contained in exhaust gas from the reaction chamber. The information processor is configured to compare a measurement value obtained by the concentration measuring section with a preset value and to thereby determine an end point of the cleaning.