Patents by Inventor Makoto Utumi

Makoto Utumi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Organic el device and method for manufacturing the same
    Patent number: 8497524
    Abstract: An organic EL device is provided and, in particular, a top-emission-type organic EL device, which can maintain excellent light emission efficiency over a prolonged period of time. The organic EL device includes a substrate; and an organic EL element that is formed on the substrate and that includes a lower electrode, an organic EL layer, an upper electrode, and a protective layer. The protective layer includes at least one inorganic film provided that at least one film thereof is a SiN:H film having a stretching-mode peak area ratio, as determined by infrared absorption spectrum measurements, of N—H bonds to Si—N bonds that is greater than 0.06 but does not exceed 0.1, and having a stretching-mode peak area ratio, as determined by infrared absorption spectrum measurements, of Si—H bonds to Si—N bonds that is greater than 0.12 but does not exceed 0.17.
    Type: Grant
    Filed: July 24, 2008
    Date of Patent: July 30, 2013
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Makoto Utumi
  • ORGANIC EL DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20110175137
    Abstract: An organic EL device is provided and, in particular, a top-emission-type organic EL device, which can maintain excellent light emission efficiency over a prolonged period of time. The organic EL device includes a substrate; and an organic EL element that is formed on the substrate and that includes a lower electrode, an organic EL layer, an upper electrode, and a protective layer. The protective layer includes at least one inorganic film provided that at least one film thereof is a SiN:H film having a stretching-mode peak area ratio, as determined by infrared absorption spectrum measurements, of N—H bonds to Si—N bonds that is greater than 0.06 but does not exceed 0.1, and having a stretching-mode peak area ratio, as determined by infrared absorption spectrum measurements, of Si—H bonds to Si—N bonds that is greater than 0.12 but does not exceed 0.17.
    Type: Application
    Filed: July 24, 2008
    Publication date: July 21, 2011
    Applicant: FUJI ELECTRIC HOLDINGS CO., LTD.
    Inventor: Makoto Utumi