Abstract: Methods and apparatus for neutralization of a workpiece such as a semiconductor wafer in a system wherein a beam of positive ions is applied to the workpiece. The apparatus includes an electron source for generating an electron beam and a magnetic assembly for generating a magnetic field for guiding the electron beam to the workpiece. The electron beam path preferably includes a first section between the electron source and the ion beam and a second section which is coincident with the ion beam. The magnetic assembly generates an axial component of magnetic field along the electron beam path. The magnetic assembly also generates a transverse component of the magnetic field in an elbow region between the first and second sections of the electron beam path. The electron source preferably includes a large area lanthanum hexaboride cathode and an extraction grid positioned in close proximity to the cathode.

Abstract: A large area directly heated lanthanum hexaboride (LaB.sub.6) cathode system (10) is disclosed. The system comprises a LaB.sub.6 cathode element (11) generally circular in shape about a central axis. The cathode element (11) has a head (21) with an upper substantially planar emission surface (23), and a lower downwardly and an intermediate body portion (26) which diminishes in cross-section from the head (21) towards the base (22) of the cathode element (11). A central rod (14) is connected to the base (22) of the cathode element (11) and extends along the central axis. Plural upstanding spring fingers (37) are urged against an outer peripheral contact surface (24) of the head end (21) to provide a mechanical and electrical connection to the cathode element (11).