Patents by Inventor Malkiat S. Nijjar

Malkiat S. Nijjar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6064253
    Abstract: First and second spaced-apart planar circuit ground conductors are formed on a base substrate. Multiple stages of an amplifier each have a field effect transistor (FET) flip mounted onto the substrate. A signal-return line couples the sources of the FETs together and functions as a radio frequency (RF) grounds for the amplifier. Direct-current-blocking coplanar couplers couple the amplifier input and output to external circuits. A single voltage supply applies a bias voltage to the drains of the FETs. A source resistance device couples each source terminal to circuit ground. The source resistance devices may be formed of two series-connected resistors. The gate of each FET is coupled to one of the circuit ground conductors through one of the source resistors. The other source resistor thereby provides a gate-to-source voltage for biasing the FET.
    Type: Grant
    Filed: April 20, 1998
    Date of Patent: May 16, 2000
    Assignee: Endgate Corporation
    Inventors: Mark V. Faulkner, Malkiat S. Nijjar, Clifford A. Mohwinkel