Abstract: Disclosed are devices, systems and methods for touch, force and/or thermal sensing by an ultrasonic transceiver chip. In some aspects, an ultrasonic transceiver sensor device includes a semiconductor substrate; a CMOS layer attached to the substrate; an array of piezoelectric transducers coupled to the CMOS layer to generate ultrasonic pulses; and a contact layer attached to the substrate on a side opposite the substrate for providing a surface for contact with an object, where an ultrasonic pulse generated by a piezoelectric transducer propagates through the substrate and the contact layer, such that when the object is in contact with the surface of the contact layer, a reflected ultrasonic pulse is produced and propagates through the contact layer and the substrate to be received at the array of piezoelectric transducers, and the CMOS layer receive and process outputs from the piezoelectric transducers produced in response to the received reflected ultrasonic pulses.

Abstract: Disclosed are devices, systems and methods for touch, force and/or thermal sensing by an ultrasonic transceiver chip. In some aspects, an ultrasonic transceiver sensor device includes a semiconductor substrate; a CMOS layer attached to the substrate; an array of piezoelectric transducers coupled to the CMOS layer to generate ultrasonic pulses; and a contact layer attached to the substrate on a side opposite the substrate for providing a surface for contact with an object, where an ultrasonic pulse generated by a piezoelectric transducer propagates through the substrate and the contact layer, such that when the object is in contact with the surface of the contact layer, a reflected ultrasonic pulse is produced and propagates through the contact layer and the substrate to be received at the array of piezoelectric transducers, and the CMOS layer receive and process outputs from the piezoelectric transducers produced in response to the received reflected ultrasonic pulses.

Abstract: Disclosed are devices, systems and methods for touch, force and/or thermal sensing by an ultrasonic transceiver chip. In some aspects, an ultrasonic transceiver sensor device includes a semiconductor substrate; a CMOS layer attached to the substrate; an array of piezoelectric transducers coupled to the CMOS layer to generate ultrasonic pulses; and a contact layer attached to the substrate on a side opposite the substrate for providing a surface for contact with an object, where an ultrasonic pulse generated by a piezoelectric transducer propagates through the substrate and the contact layer, such that when the object is in contact with the surface of the contact layer, a reflected ultrasonic pulse is produced and propagates through the contact layer and the substrate to be received at the array of piezoelectric transducers, and the CMOS layer receive and process outputs from the piezoelectric transducers produced in response to the received reflected ultrasonic pulses.

Abstract: Disclosed are devices, systems and methods for touch, force and/or thermal sensing by an ultrasonic transceiver chip. In some aspects, an ultrasonic transceiver sensor device includes a semiconductor substrate; a CMOS layer attached to the substrate; an array of piezoelectric transducers coupled to the CMOS layer to generate ultrasonic pulses; and a contact layer attached to the substrate on a side opposite the substrate for providing a surface for contact with an object, where an ultrasonic pulse generated by a piezoelectric transducer propagates through the substrate and the contact layer, such that when the object is in contact with the surface of the contact layer, a reflected ultrasonic pulse is produced and propagates through the contact layer and the substrate to be received at the array of piezoelectric transducers, and the CMOS layer receive and process outputs from the piezoelectric transducers produced in response to the received reflected ultrasonic pulses.

Abstract: A CMOS compatible GHz ultrasonic pulse/echo transmit-receive ultrasonic delay element demonstrating less than <6 ppm stability over time and having a zero-temperature coefficient of delay at two temperatures. The delay element includes one or more CMOS compatible piezoelectric transducers requiring no release step, which transmit and/or receive a GHz-ultrasonic wave packet. The bulk substrate exhibits low loss for the GHz-ultrasonic wave packet transmitted through the substrate and uses the phenomenon of diffraction to retrieve multiple reflections.

Abstract: A CMOS compatible GHz ultrasonic pulse/echo transmit-receive ultrasonic delay element demonstrating less than <6 ppm stability over time and having a zero-temperature coefficient of delay at two temperatures. The delay element includes one or more CMOS compatible piezoelectric transducers requiring no release step, which transmit and/or receive a GHz-ultrasonic wave packet. The bulk substrate exhibits low loss for the GHz-ultrasonic wave packet transmitted through the substrate and uses the phenomenon of diffraction to retrieve multiple reflections.