Abstract: The present invention is intended to provide a method of producing a Group III nitride crystal that prevents a halogen-containing by-product from adversely affecting crystal generation and is superior in reactivity and operability. A method of producing a Group III nitride crystal includes a step of causing a Group III metal to react with an oxidizing gas and nitrogen-containing gas, thereby producing a Group III nitride crystal.

Abstract: Apparatus and method for producing a Group III nitride crystal are to be provided. The apparatus for producing a Group III nitride crystal, contains: a chamber; a nitrogen element-containing gas supplying port for supplying a nitrogen element-containing gas to the chamber; a compound gas supplying port for supplying a compound gas of the Group III element to the chamber, so as to mix the compound gas with the nitrogen element-containing gas; a discharging port for discharging the compound gas and the nitrogen element-containing gas thus mixed, outside the chamber; a holder for holding a seed substrate at a position that is on a downstream side of a mixing point of the compound gas and the nitrogen element-containing gas and is an upstream side of the discharging port; a first heater for heating the seed substrate; and a second heater for heating a space between the mixing point and the seed substrate to a temperature that is higher than a temperature heated by the first heater.

Abstract: A method and apparatus for producing a Group III nitride in which the thermal decomposition of the nitrogen element-containing gas is suppressed to enhance the productivity. The method for producing a Group III nitride crystal, comprising: reacting an oxide or a metal of a Group III element under a heated atmosphere to form a compound gas of the Group III element; mixing a nitrogen element-containing gas at a temperature that is lower than that of the compound gas, with the compound gas; and reacting the nitrogen element-containing gas with the compound gas to form a Group III nitride crystal.

Abstract: The present invention provides a method for producing a Group III nitride crystal, capable of producing a Group III nitride crystal in a large size with few defects and high quality.

Abstract: The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder) for the gallium nitride (GaN) single crystal is placed inside a crucible, sublimed or evaporated by heating, and cooled on a substrate surface to return to a solid again, so that the gallium nitride single crystal is grown on the substrate surface. The growth of the single crystal is performed under pressure. The pressure is preferably not less than 5 atm (5×1.013×105 Pa). The single crystal is grown preferably in a mixed gas atmosphere containing NH3 and N2.

Abstract: The present invention provides a method of manufacturing a gallium nitride single crystal that can suppress the decomposition of gallium nitride and improve production efficiency in a sublimation method. According to the manufacturing method, a material (GaN powder) for the gallium nitride (GaN) single crystal is placed inside a crucible, sublimed or evaporated by heating, and cooled on a substrate surface to return to a solid again, so that the gallium nitride single crystal is grown on the substrate surface. The growth of the single crystal is performed under pressure. The pressure is preferably not less than 5 atm (5×1.013×105 Pa). The single crystal is grown preferably in a mixed gas atmosphere containing NH3 and N2.