Abstract: A semiconductor device in which electrodes of a plurality of semiconductor elements are bonded onto at least one of a plurality of electrode patterns on an insulator substrate, the other surface of the insulator substrate being bonded to a heat dissipating base. The upper surface of the heat dissipating base is covered with a member for cutting off the semiconductor elements from the outer environment. Terminals electrically connect the electrodes on said insulator substrate and the electrode placed outside the cutoff member. The material of the heat dissipating base has a linear expanding coefficient larger than that of the semiconductor element and smaller than three times that of the semiconductor element, and a thermal conductivity larger than 100 W/mK. The semiconductor elements are arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

Abstract: A semiconductor device in which electrodes of a plurality of semiconductor elements are bonded onto at least one of a plurality of electrode patterns on an insulator substrate, the other surface of the insulator substrate being bonded to a heat dissipating base. The upper surface of the heat dissipating base is covered with a member for cutting off the semiconductor elements from the outer environment. Terminals electrically connect the electrodes on said insulator substrate and the electrode placed outside the cutoff member. The material of the heat dissipating base has a linear expanding coefficient larger than that of the semiconductor element and smaller than three times that of the semiconductor element, and a thermal conductivity larger than 100 W/mK. The semiconductor elements are arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

Abstract: In accordance with a press contact type semiconductor device, a metallic body having macroscopic vacancies inside is arranged between a main electrode of the semiconductor device and a main electrode plate, or between an intermediate electrode plate arranged on a respective main plane of the semiconductor element and a main electrode plate.

Abstract: A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being

Abstract: In accordance with a press contact type semiconductor device, a metallic body having macroscopic vacancies in its portion is arranged between a main electrode of the semiconductor device and a main electrode plate, or between an intermediate electrode plate arranged on respective of main plane of the semiconductor element and a main electrode plate.

Abstract: In accordance with a press contact type semiconductor device, a metallic body having macroscopic vacancies inside is arranged between a main electrode of the semiconductor device and a main electrode plate, or between an intermediate electrode plate arranged on a respective main plane of the semiconductor element and a main electrode plate.

Abstract: A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being

Abstract: In accordance with a press contact type semiconductor device, a metallic body having macroscopic vacancies in its portion is arranged between a main electrode of the semiconductor device and a main electrode plate, or between an intermediate electrode plate arranged on respective of main plane of the semiconductor element and a main electrode plate.

Abstract: A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being

Abstract: In a method of removing a component from a wiring board to which the component is attached by heat-softenable resin, the improvement is provided of, after softening of the resin by heat and removal of the component, removing residual resin remaining on the board at the location of the component by application of ultraviolet laser radiation having an intensity sufficient to decompose and disperse said residual resin. This can be done without damaging the wiring on the board so that the wiring is re-usable to attach a further electronic component at the same location. Excessive heating of the board can be avoided by measures such as applying a pre-load to the component during softening so that it moves when sufficiently softened, and monitoring the softening.

Abstract: An electronic parts loaded module comprises a circuit board having electronic parts connected thereto via a plurality of projecting electrodes, in which two or more of the plurality of projecting electrodes for connecting the electronic parts have a narrowed portion between one end adjacent to the boundary for connection with the electronic parts and the other end adjacent to the boundary for connection with the board, the narrowed portion having a cross-section which has different dimensions in crossing directions, or a minor axis and a major axis different in length from each other. The projecting electrodes are disposed in a manner as the larger dimension or the major axis being aligned along the periphery or the side of the electronic parts, or as surrounding the central area of the surface, on which the electronic parts are loaded. The module can be used in IC cards and liquid crystal display apparatuses and the like.

Abstract: A substrate and semiconductor chips are connected by solder bumps and a vacant space around the solder bumps is coated with resin in such a degree that the tops of the semiconductor chips are not coated therewith. Epoxy resin or a resin having a smaller thermal expansion coefficient than the epoxy resin is used in the resin coating, and an inorganic material having a smaller thermal expansion coefficient than said resin is mixed therein.

Abstract: A semiconductor resin package structure formed according to the flip-chip connection method and permitting to cool the rear surface of semiconductor chips, comprising semiconductor chip and carrier substrate which is soldered on one surface thereof to electrodes of the semiconductor chip according to the flip-chip connection method, the gap between the semiconductor chip and the carrier substrate being filled with resin having a thermal expansion coefficient, which is approximately equal to that of used solder, the electrodes of the semiconductor chip being electrically connected with terminals on the other surface of the carrier substrate through the soldered portions and a through-hole conductor disposed on the carrier substrate, the thermal expansion coefficient of the carrier substrate being approximately equal to that of a multi-layer substrate, with which the substrate is connected by soldering with the terminals.

Abstract: A display panel includes a pair of substrates arranged face to face with each other with a predetermined gap therebetween, at least a pair of electrodes each provided on a corresponding one of facing surfaces of the substrates, and a display substance provided between the electrodes. A picture element is made up of a pair of facing portions of the electrodes and a portion of the display substance situated between the facing portions. At least one of the electrodes is made up of a multiplicity of picture element electrodes formed of a transparent conductive film and juxtaposed to each other and a contact metal member for substantially making an electrical connection of a plurality of ones of the picture element electrodes. The contact metal member is made up of a first layer made of chromium or a chromium alloy and a second layer formed on the first layer and made of nickel or gold.

Abstract: A semiconductor device is disclosed which is provided with at least one flexible conducting film having an inner electrode portion and an outer electrode portion. The inner electrode portion is conductively bonded to at least one of two kinds of electrode films formed on one main surface of a semiconductor substrate, and has a form similar to the shape of the electrode film. The outer electrode portion is integrated with the inner electrode portion into one body but is not bonded to the electrode film. The conducting film can be previously bonded to a transparent insulating film, if desired, and is arranged in registry with the electrode film on the semiconductor substrate, while being supported by the insulating film. Accordingly, the inner electrode portion of the conducting film is bonded to the electrode film having a complicated pattern, readily and accurately. The inner electrode portion serves to reduce the electric resistance of the electrode film and to increase the current capacity of the electrode.